公开(公告)号：WO2010104838A1

公开(公告)日：2010-09-16

申请号：PCT/US2010/026639

申请日：2010-03-09

Applicant: 1366 TECHNOLOGIES INC. ,  SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  HANTSOO, Eerik, T. ,  LORENZ, Adam, M. ,  HUDELSON, G. D., Stephen ,  JONCZYK, Ralf

Inventor： SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  HANTSOO, Eerik, T. ,  LORENZ, Adam, M. ,  HUDELSON, G. D., Stephen ,  JONCZYK, Ralf

IPC: C30B15/00 ,  C03B19/02

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

Abstract translation: 在模板上施加压差，并在其上形成半导体（例如硅）晶片。 压差的放松允许晶片的释放。 模具片可以比熔体更冷。 几乎完全通过成形晶片的厚度提取热量。 液体和固体界面基本上平行于模片。 凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。 模板必须允许气体流过它。 可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。 可以通过许多方法控制晶粒尺寸。

公开(公告)号：EP2406413B1

公开(公告)日：2018-05-30

申请号：EP10751275.8

申请日：2010-03-09

Applicant: 1366 Technologies Inc.

Inventor： SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  HANTSOO, Eerik, T. ,  LORENZ, Adam, M. ,  HUDELSON, G. D., Stephen ,  JONCZYK, Ralf

IPC: B29C33/44 ,  C03B19/02 ,  C30B19/06 ,  C30B29/06 ,  H01L21/02 ,  H01L31/18 ,  C30B15/30 ,  C30B11/00 ,  C30B28/04

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

公开(公告)号：EP2406413A1

公开(公告)日：2012-01-18

申请号：EP10751275.8

申请日：2010-03-09

Applicant: 1366 Technologies Inc.

Inventor： SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  HANTSOO, Eerik, T. ,  LORENZ, Adam, M. ,  HUDELSON, G. D., Stephen ,  JONCZYK, Ralf

IPC: C30B15/00 ,  C03B19/02

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.