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    HALF-BRIDGE MODULE WITH COAXIAL ARRANGEMENT OF THE DC TERMINALS
    11.
    发明申请
    HALF-BRIDGE MODULE WITH COAXIAL ARRANGEMENT OF THE DC TERMINALS 审中-公开

    公开(公告)号：US20200066686A1

    公开(公告)日：2020-02-27

    申请号：US16673427

    申请日：2019-11-04

    Applicant: ABB Schweiz AG ,  Audi AG

    Inventor： Fabian Mohn ,  Felix Traub ,  Jürgen Schuderer

    IPC: H01L25/07 ,  H01L23/498 ,  H01L23/538 ,  H02M7/00 ,  H05K7/14 ,  H01L23/00

    Abstract: A half-bridge module includes a substrate with a base metallization layer divided into a first DC conducting area, a second DC conducting area and an AC conducting area; at least one first power semiconductor switch chip bonded to the first DC conducting area and electrically interconnected with the AC conducting area; at least one second power semiconductor switch chip bonded to the AC conducting area and electrically interconnected with the second DC conducting area; and a coaxial terminal arrangement including at least one inner DC terminal, the at least first outer DC terminal and the at least one second outer DC terminal protrude from the module and are arranged in a row, such that the at least one inner DC terminal is coaxially arranged between the at least one first outer DC terminal and the at least one second outer DC terminal; wherein the at least one inner DC terminal is electrically connected to the second DC conducting area; the at least one first outer DC terminal and the at least one second outer DC terminal are electrically connected to the first DC conducting area; and the at least one first outer DC terminal and the at least one second outer DC terminal are electrically interconnected with an electrically conducting bridging element which is adapted for distributing at least a half of the load current between the at least one first outer DC terminal and the at least one second outer DC terminal.

    Power semiconductor module
    12.
    发明授权
    Power semiconductor module 有权

    公开(公告)号：US10283454B2

    公开(公告)日：2019-05-07

    申请号：US15819693

    申请日：2017-11-21

    Applicant: ABB Schweiz AG

    Inventor： Felix Traub ,  Fabian Mohn ,  Juergen Schuderer ,  Daniel Kearney ,  Slavo Kicin

    IPC: H01L23/538 ,  H01L23/64 ,  H01L25/07 ,  H01L29/00 ,  H01L23/373 ,  H01L23/498

    Abstract: The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane. The first plane is spaced apart from the second plane in a direction normal to the first plane, whereby the first substrate is based on a direct bonded copper substrate and the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a layer of a printed circuit board is provided for carrying the diode. Alternatively, the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a foil is provided for carrying the diode, wherein the foil comprises an electrically insulating main body and an electrically conductive structure provided thereon for carrying the diode. Such a power semiconductor module provides a low stray inductance and/or may be built easily.

    POWER SEMICONDUCTOR MODULE
    14.
    发明申请
    POWER SEMICONDUCTOR MODULE 审中-公开

    公开(公告)号：US20180090441A1

    公开(公告)日：2018-03-29

    申请号：US15819693

    申请日：2017-11-21

    Applicant: ABB Schweiz AG

    Inventor： Felix Traub ,  Fabian Mohn ,  Juergen Schuderer ,  Daniel Kearney ,  Slavo Kicin

    IPC: H01L23/538 ,  H01L23/64 ,  H01L25/07 ,  H01L29/00

    CPC classification number: H01L23/5385 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/645 ,  H01L25/072 ,  H01L29/00 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49111 ,  H01L2924/19107 ,  H01L2924/00014

    Abstract: The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane. The first plane is spaced apart from the second plane in a direction normal to the first plane, whereby the first substrate is based on a direct bonded copper substrate and the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a layer of a printed circuit board is provided for carrying the diode. Alternatively, the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a foil is provided for carrying the diode, wherein the foil comprises an electrically insulating main body and an electrically conductive structure provided thereon for carrying the diode. Such a power semiconductor module provides a low stray inductance and/or may be built easily.

    SEMICONDUCTOR DEVICE
    15.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180090401A1

    公开(公告)日：2018-03-29

    申请号：US15819579

    申请日：2017-11-21

    Applicant: ABB Schweiz AG

    Inventor： Fabian Mohn ,  Paul Commin

    IPC: H01L23/051 ,  H01L23/16

    CPC classification number: H01L23/051 ,  H01L23/16 ,  H01L24/01

    Abstract: A semiconductor device comprises two electrodes with opposite faces; a semiconductor wafer sandwiched between the two electrodes; an outer insulating ring attached to the two electrodes and surrounding the semiconductor wafer; a middle insulating ring inside the outer insulating ring and surrounding the semiconductor wafer, whereby the middle insulating ring is made of a plastics material; and an inner insulating ring inside the middle insulating ring, whereby the inner insulating ring is made of ceramics and/or glass material. Either the middle insulating ring or the inner insulating ring has a tongue and the other thereof has a groove such that the tongue fits into the groove for their rotational alignment. The middle insulating ring and the inner insulating ring have a radial opening for receiving a gate connection of the semiconductor device.

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