公开(公告)号：US20190131211A1

公开(公告)日：2019-05-02

申请号：US16233266

申请日：2018-12-27

Applicant: ABB Schweiz AG

Inventor： Daniel Kearney ,  Jürgen Schuderer ,  Slavo Kicin ,  Liliana Duarte

IPC: H01L23/473 ,  H01L25/07 ,  H05K1/02

Abstract: An electronics package includes an electrically conducting support layer; at least one electrically conducting outer layer; at least two power electronics components arranged on different sides of the support layer and electrically interconnected with the support layer and with the at least one outer layer; and isolation material, in which the support layer and the at least two power electronics components are embedded, the support layer and the at least one outer layer are laminated together with the isolation material; and a cooling channel for conducting a cooling fluid through the electronics package, the cooling channel runs between the at least two power electronics components through the support layer.

公开(公告)号：US20180040538A1

公开(公告)日：2018-02-08

申请号：US15783193

申请日：2017-10-13

Applicant: ABB Schweiz AG

Inventor： Juergen Schuderer ,  Fabian Mohn ,  Didier Cottet ,  Felix Traub ,  Daniel Kearney

IPC: H01L23/473 ,  H01L23/498 ,  H01L23/31 ,  H01L29/16 ,  H01L25/07 ,  H01L23/00

CPC classification number: H01L23/473 ,  H01L23/3142 ,  H01L23/49844 ,  H01L24/48 ,  H01L24/49 ,  H01L25/071 ,  H01L29/1608 ,  H01L2224/33 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A power electronics module comprises a first liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the first liquid cooler comprises a metal body providing a first terminal of the power electronics module; a second liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the second liquid cooler comprises a metal body providing a second terminal of the power electronics module; a plurality of semiconductor chips arranged between the first liquid cooler and the second liquid cooler, such that a first electrode of each semiconductor chip is bonded to the first liquid cooler, such that the first electrode is in electrical contact with the first liquid cooler, and an opposite second electrode of each semiconductor chip is in electrical contact with the second liquid cooler; and an insulating encapsulation, formed by molding the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips into an insulation material, such that the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips are at least partially embedded onto the insulation material.

公开(公告)号：US10283454B2

公开(公告)日：2019-05-07

申请号：US15819693

申请日：2017-11-21

Applicant: ABB Schweiz AG

Inventor： Felix Traub ,  Fabian Mohn ,  Juergen Schuderer ,  Daniel Kearney ,  Slavo Kicin

IPC: H01L23/538 ,  H01L23/64 ,  H01L25/07 ,  H01L29/00 ,  H01L23/373 ,  H01L23/498

Abstract: The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane. The first plane is spaced apart from the second plane in a direction normal to the first plane, whereby the first substrate is based on a direct bonded copper substrate and the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a layer of a printed circuit board is provided for carrying the diode. Alternatively, the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a foil is provided for carrying the diode, wherein the foil comprises an electrically insulating main body and an electrically conductive structure provided thereon for carrying the diode. Such a power semiconductor module provides a low stray inductance and/or may be built easily.

公开(公告)号：US20180090441A1

公开(公告)日：2018-03-29

申请号：US15819693

申请日：2017-11-21

Applicant: ABB Schweiz AG

Inventor： Felix Traub ,  Fabian Mohn ,  Juergen Schuderer ,  Daniel Kearney ,  Slavo Kicin

IPC: H01L23/538 ,  H01L23/64 ,  H01L25/07 ,  H01L29/00

CPC classification number: H01L23/5385 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/645 ,  H01L25/072 ,  H01L29/00 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49111 ,  H01L2924/19107 ,  H01L2924/00014

Abstract: The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane. The first plane is spaced apart from the second plane in a direction normal to the first plane, whereby the first substrate is based on a direct bonded copper substrate and the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a layer of a printed circuit board is provided for carrying the diode. Alternatively, the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a foil is provided for carrying the diode, wherein the foil comprises an electrically insulating main body and an electrically conductive structure provided thereon for carrying the diode. Such a power semiconductor module provides a low stray inductance and/or may be built easily.

公开(公告)号：US10699986B2

公开(公告)日：2020-06-30

申请号：US16233266

申请日：2018-12-27

Applicant: ABB Schweiz AG

Inventor： Daniel Kearney ,  Jürgen Schuderer ,  Slavo Kicin ,  Liliana Duarte

IPC: H01L23/34 ,  H01L23/473 ,  H01L25/07 ,  H05K1/02 ,  H01L23/538 ,  H05K1/18

Abstract: An electronics package includes an electrically conducting support layer; at least one electrically conducting outer layer; at least two power electronics components arranged on different sides of the support layer and electrically interconnected with the support layer and with the at least one outer layer; and isolation material, in which the support layer and the at least two power electronics components are embedded, the support layer and the at least one outer layer are laminated together with the isolation material; and a cooling channel for conducting a cooling fluid through the electronics package, the cooling channel runs between the at least two power electronics components through the support layer.

公开(公告)号：US10283436B2

公开(公告)日：2019-05-07

申请号：US15783193

申请日：2017-10-13

Applicant: ABB Schweiz AG

Inventor： Juergen Schuderer ,  Fabian Mohn ,  Didier Cottet ,  Felix Traub ,  Daniel Kearney

IPC: H01L23/473 ,  H01L25/07 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L29/16

Abstract: A power electronics module comprises a first liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the first liquid cooler comprises a metal body providing a first terminal of the power electronics module; a second liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the second liquid cooler comprises a metal body providing a second terminal of the power electronics module; a plurality of semiconductor chips arranged between the first liquid cooler and the second liquid cooler, such that a first electrode of each semiconductor chip is bonded to the first liquid cooler, such that the first electrode is in electrical contact with the first liquid cooler, and an opposite second electrode of each semiconductor chip is in electrical contact with the second liquid cooler; and an insulating encapsulation, formed by molding the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips into an insulation material, such that the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips are at least partially embedded onto the insulation material.