MULTI-PORT SOLID-STATE CIRCUIT BREAKER APPARATUSES, SYSTEMS, AND METHODS

    公开(公告)号:US20220085595A1

    公开(公告)日:2022-03-17

    申请号:US17019590

    申请日:2020-09-14

    Applicant: ABB Schweiz AG

    Abstract: A multi-port solid-state circuit breaker system includes a first electrical power bus, a second electrical power bus, and a plurality of breaker legs conductively coupled with the first electrical power bus and the second electrical power bus in parallel with one another. Each of the plurality of breaker legs includes a first power semiconductor device coupled in series with a second power semiconductor device and an input/output port intermediate the first power semiconductor device and the second power semiconductor device. At least one of the first semiconductor device and the second semiconductor device includes an actively controlled switching device. A surge suppressor is conductively coupled in parallel with the plurality of breaker legs.

    GATE DRIVER CIRCUITS WITH INDEPENDENTLY TUNABLE PERFORMANCE CHARACTERISTICS

    公开(公告)号:US20230188134A1

    公开(公告)日:2023-06-15

    申请号:US17549520

    申请日:2021-12-13

    Applicant: ABB Schweiz AG

    CPC classification number: H03K17/6874 H02H7/22 H02H3/087

    Abstract: A gate driver circuit is provided that includes a turn-on path, a turn-off path, and a fast discharge path. The turn-on path is couplable between a gate of a solid-state switch and a voltage turn-on signal (VGON) from a gate driver, where the turn-on path defines a turn-on time for the solid-state switch. The turn-off path is couplable between the gate and a voltage turn-off signal (VGOFF) from the gate driver, where the turn-off path defines a turn-off time for the solid-state switch. The fast discharge path is selectively couplable in parallel with the turn-off path during a portion of a gate-to-source voltage (VGS) transition for the solid-state switch, where the turn-off path in parallel with the fast discharge path defines a turn-off delay for the solid-state switch and each of the turn-on time, the turn-off time, and the turn-off delay are independently configurable.

    SENSOR-LESS OVERCURRENT FAULT DETECTION USING HIGH ELECTRON MOBILITY TRANSISTORS

    公开(公告)号:US20230074777A1

    公开(公告)日:2023-03-09

    申请号:US17468831

    申请日:2021-09-08

    Applicant: ABB Schweiz AG

    Abstract: An overcurrent fault detector using a High Electron Mobility Transistor (HEMT) operated by a gate driver is disclosed. The overcurrent fault detector includes a band-pass filter and a control circuit. The band-pass filter is configured to receive gate-to-source voltage (VGS) signals of the HEMT and filter the VGS signals to generate a band-limited version of the VGS signals. The control circuit is configured to measure a value of the band-limited version of the VGS signals, determine if the value is greater than a threshold value, and generate a fault signal that disables the gate driver and terminates an overcurrent fault condition in response to determining that the value is greater than the threshold value.

    POWER SEMICONDUCTOR SWITCH CLAMPING CIRCUIT

    公开(公告)号:US20220149615A1

    公开(公告)日:2022-05-12

    申请号:US17091630

    申请日:2020-11-06

    Applicant: ABB Schweiz AG

    Abstract: A power semiconductor circuit is provided for clamping the voltage across the circuit when a power semiconductor switch is opened (i.e., turned off). The circuit may include a first surge arrester and a first semiconductor switch coupled in parallel with the power semiconductor switch. The first semiconductor switch is coupled in series with the first surge arrester. A second surge arrester may be coupled to the gate of the first semiconductor switch to control current flow through the first semiconductor switch and the first surge arrester.

    VOLTAGE CLAMPING CIRCUIT FOR SOLID STATE CIRCUIT BREAKER

    公开(公告)号:US20210288636A1

    公开(公告)日:2021-09-16

    申请号:US17326914

    申请日:2021-05-21

    Applicant: ABB Schweiz Ag

    Inventor: Xiaoqing Song Yu Du

    Abstract: Unique systems, methods, techniques and apparatuses of solid state circuit breaker protection are disclosed. One exemplary embodiment is a solid state circuit breaker comprising a primary switching device including a first terminal and a second terminal and a voltage clamping circuit coupled in parallel with the primary switching device. The voltage clamping circuit includes a metal-oxide varistor (MOV) coupled in series between the first terminal and an auxiliary semiconductor device, the auxiliary semiconductor device being arranged so as to selectively couple the MOV with the second terminal, and a bypass circuit coupled between the first terminal and the auxiliary semiconductor device.

    Rapid turn-off circuit in static transfer switch

    公开(公告)号:US11742849B2

    公开(公告)日:2023-08-29

    申请号:US17510299

    申请日:2021-10-25

    Applicant: ABB Schweiz AG

    Abstract: Disclosed herein is a hybrid resonant capacitor circuit including a first capacitor configured to discharge resonant current to interrupt a load current to a switch in parallel with the hybrid resonant capacitor circuit, a second capacitor coupled in parallel with the first capacitor, wherein the second capacitor is configured to transfer energy stored in the second capacitor to the first capacitor after discharge of the resonant current from the first capacitor, and a current limiter coupled in series with the second capacitor. A static transfer switch including a thyristor switch and the hybrid resonant capacitor circuit is also disclosed herein, as is a method for facilitating multiple consecutive voltage source transfers between a first voltage source and a second voltage source powering a load, using the hybrid resonant capacitor circuit.

    THYRISTOR CURRENT INTERRUPTER
    18.
    发明公开

    公开(公告)号:US20230208416A1

    公开(公告)日:2023-06-29

    申请号:US17560551

    申请日:2021-12-23

    Applicant: ABB Schweiz AG

    CPC classification number: H03K17/136 H03K17/06 H03K17/0403 H03K17/60

    Abstract: In one aspect, a solid-state switching apparatus is provided that includes a pair of anti-parallel thyristors, a quasi-resonant turn-off circuit, a sensor, and a control circuit. The turn-off circuit is coupled in parallel with the pair of anti-parallel thyristors and includes a first selectively conductive path and a second selectively conductive path. The sensor is configured to sense a thyristor current conducted by at least one of the pair of anti-parallel thyristors. The control circuit is configured to receive the sensed thyristor current from the sensor and determine a magnitude of the sensed thyristor current and a polarity of the sensed thyristor current. The control circuit is further configured to activate, in response to determining that the magnitude is greater than a threshold value, one of the first selectively conductive path and the second selectively conductive path based on the polarity to commutate and interrupt the thyristor current.

    Power semiconductor switch clamping circuit

    公开(公告)号:US11641103B2

    公开(公告)日:2023-05-02

    申请号:US17091630

    申请日:2020-11-06

    Applicant: ABB Schweiz AG

    Abstract: A power semiconductor circuit is provided for clamping the voltage across the circuit when a power semiconductor switch is opened (i.e., turned off). The circuit may include a first surge arrester and a first semiconductor switch coupled in parallel with the power semiconductor switch. The first semiconductor switch is coupled in series with the first surge arrester. A second surge arrester may be coupled to the gate of the first semiconductor switch to control current flow through the first semiconductor switch and the first surge arrester.

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