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11.发明公开OVERERASE CORRECTION FOR FLASH MEMORY WHICH LIMITS OVERERASE AND PREVENTS ERASE VERIFY ERRORS 失效关于修正删除闪存与对照的灭绝与持续LÖSCHPRÜFFEHLERN防治方案
公开(公告)号：EP0857346A1
公开(公告)日：1998-08-12
申请号：EP96921742.0
申请日：1996-06-21
Applicant: ADVANCED MICRO DEVICES INC.
Inventor： CLEVELAND, Lee , CHANG, Chung, K. , TANG, Yuan , LEONG, Nancy , FLIESLER, Michael , KUO, Tiao-Hua
IPC: G11C16
CPC classification number: G11C16/3409 , G11C16/3404 , G11C16/3445
Abstract: An integrated circuit including an array of flash EEPROM memory cells wherein overerase correction is provided after application of each erase pulse.
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