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公开(公告)号：JPH0799024A
公开(公告)日：1995-04-11
申请号：JP26416493
申请日：1993-09-28
Applicant: AGENCY IND SCIENCE TECHN , TOPPAN PRINTING CO LTD
Inventor： ITO JUNJI , KANAMARU MASATAKE , ISHIZAKI MAMORU , MINATO TAKAO , YOSHIDA KANENORI
Abstract: PURPOSE:To provide a electron emitting element which particularly does not require manufacturing technique as high in accuracy as technique required by a conical shape, enables shortcircuiting caused by damaged electrons to hardly occur, and furthermore is excellent in electrical characteristics, and high in uniformity and stability in electron emission as compared with those of the case of an edge shape. CONSTITUTION:Each electron emitting element includes, for example, an emitter 1 formed in such a way that a plurality of overhang sections 11a formed in a rectangle shape are arranged in a radial shape or a centripetal shape, and a gate 2 which is provided close to the emitter 1 to apply an electric field to the emitter 1. Two tip projections 10a each of which is projected in three dimensions with its tip end sharply pointed, are formed at the tip end of each overhang of the emitter 1, when the electric field is applied between the emitter 1 and the gate 2, electrons are convergently emitted out of each tip projection 10a.
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公开(公告)号：JPH05133720A
公开(公告)日：1993-05-28
申请号：JP11973592
申请日：1992-04-13
Applicant: AGENCY IND SCIENCE TECHN
Inventor： KANAYAMA TOSHIHIKO , ITO JUNJI
Abstract: PURPOSE:To measure the relative displacement with high accuracy by taking out the synthetic wave including at least two diffraction waves, and measuring the distance between two objects from the phase of beat in the strength of the synthetic wave. CONSTITUTION:The phase of the beat component of a diffraction wave D is measured by using, as incident wave I, an electromagnetic wave having two components I1, I2 with different frequency and polarized state. This sort of electric wave is easily obtainable, for example using Zeeman laser. A stronger beat is produced if a polarizer 21 in appropriate direction is inserted before a sensor 4. The change in the phase of beat due to change in the distance S between two objects becomes more distinct of the electromagnetic wave is of such a type that the polarized state used as incident wave is in linear polarization in the different direction. The reason therefore is because the fact that the diffraction efficiency of a diffraction lattice and the reflectivity of the surface of any object differ depending upon the polarized state is used and because, in general, such a change is maximized when the polarizing direction of linear polarization is changed.
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公开(公告)号：JPH04137327A
公开(公告)日：1992-05-12
申请号：JP25505390
申请日：1990-09-27
Applicant: AGENCY IND SCIENCE TECHN , FUTABA DENSHI KOGYO KK
Inventor： ITO JUNJI , KANAMARU MASATAKE , ITO SHIGEO , WATANABE TERUO , NAKADA HISASHI , NISHIMURA NORIO
Abstract: PURPOSE:To enhance field strength and improve reproductivity, stability and life by forming a board with the recess portion near an electrode, not a gate formed on the board, and providing a gate inside the recess portion. CONSTITUTION:A board 1 has the upper face provided with a thin film 10 made of Al, Nb, etc., on which an electrode layer 11 made of W, etc., is formed. The layer 11 has the upper face provided with a resist layer 12 to form an electrode-shaped pattern. Etching is applied to the upper face of the board 1 to separate the electrode layer 11 into two, an emitter 2 and a collector 3. The board 1 is given etching to form a groove 4 between the layers 11. The thin film 10 and the electrode layer 11 are given side etching. Metal 13 for a gate electrode is evaporated on the upper face of the board 1, thinner than the groove 4, to form a gate 5. The layer 12 and the metal 13 are removed to obtain a field emission element in a triode structure of the emitter 2, the collector 3 and the gate 5.
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公开(公告)号：JPH11167857A
公开(公告)日：1999-06-22
申请号：JP7815598
申请日：1998-03-25
Applicant: TOPPAN PRINTING CO LTD , AGENCY IND SCIENCE TECHN
Inventor： GAMO SHUSUKE , KANAMARU MASATAKE , ITO JUNJI
Abstract: PROBLEM TO BE SOLVED: To provide a field emission type electron emitting element capable of suppressing the electric current fluctuation to the minimum and at the same time suppressing local large current flow without increasing the operational voltage and formable on a glass substrate easy to lower the cost and to enlarge the surface area of the element. SOLUTION: This field emission type cold electron emitting element is produced by sequentially laminating a first conductive layer 2 on an insulating substrate 1, an insulating layer 5, and a gate electrode 7, forming an aperture part B in the insulating layer 5 and the gate electrode 7, and forming an emitter 8 in the aperture part B while keeping the emitter separated from the gate electrode 7. In this case, the emitter 8 is made of a non-single crystal silicon and a second conductive layer 3 is formed on the insulating substrate 1 while being kept from a contact with the first conductive layer 2. Further, a semiconductor thin layer 4 of a non-single crystal silicon is formed on the insulating substrate 1 at least between the first conductive layer 2 and the second conductive layer 3 and a third conductive layer 6 is formed on or under the semiconductive thin layer 4 through a gate insulating layer 5' while being kept from a contact with the first conductive layer 2 and the second conductive layer 3.
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公开(公告)号：JPH1154025A
公开(公告)日：1999-02-26
申请号：JP21369297
申请日：1997-08-07
Applicant: TOPPAN PRINTING CO LTD , AGENCY IND SCIENCE TECHN
Inventor： GAMO SHUSUKE , KANAMARU MASATAKE , ITO JUNJI
Abstract: PROBLEM TO BE SOLVED: To provide a cold electron emitting element of an electric field radiating type, which can reduce electric current fluctuation to its minimum limit while suppressing a local big current without raising an actuating voltage, and can realize a low cost and a large area easily. SOLUTION: On a base board 1 of this element, a semiconductor thin film layer 2, an insulating layer 3 and a gate electrode 4 are laminated in order, and an emitter 5 is made in an opening part A provided in the gate electrode 4 and the insulating layer 3 so as not touch the gate 4. In this case, a T F T structure, which has the emitter 5 as a drain, a first conductive layer 6 as a source and the semiconductor thin film between them as a channel, is made, by using non-single crystal silicon for the emitter 5 and forming the first conductive layer 6 so as not to touch the emitter 5 on the same plane on the semiconductor thin film layer 2.
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Patent Agency Ranking
公开(公告)号：JPH10255645A
公开(公告)日：1998-09-25
申请号：JP5567197
申请日：1997-03-11
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ITO JUNJI , KANAMARU MASATAKE
Abstract: PROBLEM TO BE SOLVED: To provide excellent current stability by providing an emitter having a sharp tip, a cathode, gate electrodes, an insulating layer, and an extracting electrode formed around the tip of the emitter. SOLUTION: An optional conductive semiconductor thin film 32 is formed on an insulating substrate 31 made of glass, an emitter 33 having a sharp tip is formed at one end, and a cathode 34 is formed at the other end. Two gate electrodes 35 are provided between the emitter 33 and cathode 34 by Schottky connection. An extracting electrode 36 having an opening section surrounding the tip section of the emitter 33 is formed on the semiconductor thin film 32, cathode 34, and gate 35 via an insulating layer 37. When the gate voltage is increased in the negative direction, no current flows on the semiconductor thin film 32, and the current emission from the tip of the emitter 33 can be stopped. When the gate voltage is adjusted, the current emitted from the emitter 33 can be freely controlled.
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公开(公告)号：JPH09259745A
公开(公告)日：1997-10-03
申请号：JP6763096
申请日：1996-03-25
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ITO JUNJI , KANAMARU MASATAKE
Abstract: PROBLEM TO BE SOLVED: To provide an element structure which is proper for stabilizing the emission current of a cold electron emitting element by plural control voltage systems, and is simple. SOLUTION: An emitter 13 having a tip portion P0 is made by processing a p-type semiconductor substrate 31, and an n-type source region 32 is provided on a p-type semiconductor substrate surface positioned apart from the emitter 13 in a transverse direction. An electrode layer 34 having an opening 15 surrounding the tip portion P0 of the emitter 13 is provided via an insulating layer 12, and the electrode layer 34 is extended so as to reach above the n-type source region 32. The electrode layer 34 is divided into plural electrodes G1, G2, G3. An extracting voltage Vg is applied to the electrode G1. The electrode G2 is connected to an X selection line Lx, and the electrode G3, to a Y selection line Ly.
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公开(公告)号：JPH09129123A
公开(公告)日：1997-05-16
申请号：JP9033796
申请日：1996-03-19
Applicant: TOPPAN PRINTING CO LTD , AGENCY IND SCIENCE TECHN
Inventor： GAMO SHUSUKE , KANAMARU MASATAKE , ITO JUNJI
Abstract: PROBLEM TO BE SOLVED: To form an emitter having a sharp tip of an electron emitting element by the reactive ion etching method, not by the anisotropic deposition method, use a glass substrate capable of easily increasing the area other than single a crystal Si substrate, and maintain the homogeneity of the characteristics of multiple electron emitting elements in the substrate even when the area of the substrate is increased. SOLUTION: This element is laminated with a substrate 1, an emitter wiring layer 2, an insulating layer 4, and a gate electrode 5 in sequence, an opening section A reaching the emitter wiring layer 2 is provided on the gate electrode 5 and the insulating layer 4, and a conical emitter 3 is formed in no contact with the gate electrode 5 on the emitter wiring layer 2 in the opening section A. The emitter wiring layer 2 is made of a metal thin film, and the emitter 3 is made of amorphous silicon.
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公开(公告)号：JPH0963467A
公开(公告)日：1997-03-07
申请号：JP21709195
申请日：1995-08-25
Applicant: KOBE STEEL LTD , AGENCY IND SCIENCE TECHN
Inventor： HIRANO TAKAYUKI , ITO JUNJI , KANAMARU MASATAKE
Abstract: PROBLEM TO BE SOLVED: To obtain a cold electron emitting element, and the manufacture of the cold electron emitting element excellent in the working accuracy of the acute end of an emitter protruded part, and the uniformity of structure, and also capable of emitting a stable electric current. SOLUTION: An emitter base part 34b composed of an (n) type semiconductor, a protruded part 34, and a source region 37b are formed on a part of a (p) type silicone substrate 38; a source electrode 37a is formed on the source region 37b; electric current control electrodes 35 via first insulating layers 32 is formed onto the emitter base part 34b and the substrate including a part of the source region 37b; and extraction electrodes 36 via second insulating layers 33 is formed onto the electrodes 35. About manufacture, at first, the emitter protruded part is formed onto a (p) type silicone substrate; the first insulating layer and the electric current control electrode is formed onto the emitter base part and the substrate including the source region; and then the second insulating layer and the electrodes 36 is formed onto the electric current control electrode; finally, an (n) type impurity is formed on the emitter base part and the source region; and after that, the source electrode is formed.
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公开(公告)号：JPH0963463A
公开(公告)日：1997-03-07
申请号：JP21710795
申请日：1995-08-25
Applicant: AGENCY IND SCIENCE TECHN
Inventor： KANAMARU MASATAKE , ITO JUNJI
Abstract: PROBLEM TO BE SOLVED: To obtain simple element structure, being suitable for stabilizedly controlling the emitted electric current of a cold electron emitting element. SOLUTION: In an emitter 13 formed into a solid shape onto a base bottom member 11, a source layer 32 and a drain layer 34 are provided on the side of a base part contacting the base bottom member 11 and of a free end including a tip Po respectively. A channel region layer 33 is provided, between the layers 32 and 34, to control the conductivity of a channel layer 33, thereby stabilizedly controlling an emitted electric current emitted from the tip Po by a gate 14 for applying a high electric field to the tip Po of the emitter 13.
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