公开(公告)号：JPH11262972A

公开(公告)日：1999-09-28

申请号：JP868799

申请日：1999-01-18

Applicant: AGENCY IND SCIENCE TECHN

Inventor： ON KEIJIYO ,  MINAMI SHINJI

IPC: B32B9/00 ,  C09K11/00 ,  C09K11/08 ,  C09K11/65 ,  C09K11/67

Abstract: PROBLEM TO BE SOLVED: To generate a strong luminescence having an emission spectrum of a wide range by laminating one or more fullerene layer and one or more auxiliary substance layer on a base material and forming a metal, metalloid, metal compound, metalloid compound and their mixture by sputtering as an auxiliary substance. SOLUTION: One or more fullerene layers and one or more auxiliary substance layers are laminated on a base plate and a metal, metalloid, metal compound, metalloid compound or their mixture is formed by sputtering as an auxiliary substance. As the auxiliary substance, a silicon, germanium, tin oxide, titanium oxide, indium oxide, silicon oxide, aluminum oxide, zinc oxide, silicon nitride, boron nitride or the like is preferable. The fullerene layers and a plurality of the auxiliary substance layers are preferably alternately laminated preferably in view of luminescence. For example, an argon laser beam having a wavelength of 514.5 nm of a luminophor is emitted to its surface to emit a white light having a spectrum of a wavelength of 650 nm or more.

公开(公告)号：JP2000338697A

公开(公告)日：2000-12-08

申请号：JP2000071269

申请日：2000-03-14

Applicant: AGENCY IND SCIENCE TECHN

Inventor： OKUMOTO HAJIME ,  YATABE TETSUO ,  SHIMOMURA MASAKI ,  MINAMI SHINJI ,  KAIDO AKIRA ,  TANABE GIICHI

IPC: G03G5/07 ,  G03G5/00 ,  G03G5/06

Abstract: PROBLEM TO BE SOLVED: To obtain a higher-speed electric charge generating and transferring material having higher sensitivity and an electric charge generating and transferring element using the material. SOLUTION: The electric charge generating and transferring material comprises an oligosilane compound of the formula R1-(SiR2R3)n-R4, wherein R1-R4 are each H, a 1-4C alkyl or phenyl and (n) is an integer of 6-18. The electric charge generating and transferring material is a thin film obtained by melting and cooling the oligosilane compound at

公开(公告)号：JPH0679168A

公开(公告)日：1994-03-22

申请号：JP23816092

申请日：1992-09-07

Applicant: KASAI HITOSHI ,  OIKAWA HIDETOSHI ,  ONO KATSUMICHI ,  NAKANISHI HACHIRO ,  HITACHI LTD ,  AGENCY IND SCIENCE TECHN

Inventor： KASAI HITOSHI ,  OIKAWA HIDETOSHI ,  ONO KATSUMICHI ,  NAKANISHI HACHIRO ,  OKADA SHUJI ,  MATSUDA HIROO ,  MINAMI SHINJI ,  HARI SHINGU NARUWA ,  TSUNODA ATSUSHI ,  KOBI AKIO

IPC: B01J19/00 ,  B01J19/12 ,  C07B63/00 ,  C08F2/18 ,  C08F2/48 ,  C08F6/00 ,  C08F38/00

Abstract: PURPOSE:To prepare a superfine particle wherein mol.wt., degree of crystalinity, etc., are controlled in accordance with the use by mixing a soln. of an org. material dissolved in a good solvent in a poor solvent for the org. material being compatible with this solvent and preparing an org. superfine particle consisting of a crystal or an associated body with a specified particle diameter or smaller. CONSTITUTION:A functional org. material such as a conjugated molecule with a pi atom conjugated system and a color element molecule is dissolved in a good solvent such as ethanol. Then, the soln. is mixed in a poor solvent which is compatible with this solvent and is a poor solvent for the org. material, such as water to prepare an org. superfine particle with a particle diameter of at most 1mum consisting of a crystal or an associated body. By treating like this, the good solvent dissolving the sample is dispersed as a droplet after it is mixed in the poor solvent and with evaporation gradually, the droplet loses the solvent to make a supersaturated condition and a fine crystal is finally deposited.

公开(公告)号：JPH0599759A

公开(公告)日：1993-04-23

申请号：JP29095491

申请日：1991-10-09

Applicant: AGENCY IND SCIENCE TECHN

Inventor： MINAMI SHINJI

IPC: G01K11/00 ,  H01L37/02

Abstract: PURPOSE:To enable temperature measurement with very high accuracy by using at least one kind of Fullerenes selected from the Fullerenes, as a temperature sensing material. CONSTITUTION:At least one kind of Fullerene is used as a temperature sensing material. As the Fullerene, one single form of C60 and/or C70 can be used independently and also mixture of the both compounds can be used, as well. On a base plate 1 on which electrodes 2 are provided, a layer 3 of the Fullerene is formed to produce a temperature sensor. The temperature sensor A is supported by a supporting plate made of a thermal conductive material, and, by controlling the temperature of the sensor A through controlling the tank temperature of a heat media liquid, light beam irradiates through a penetration hole 5. Usually, wave length of the light beam is selected to be 600nm and 400nm but the other wave length can also be well selected. Photo-electrical amount generated between electrodes of the sensor A by such a light beam irradiation, is measured in order to provide a measuring line. Subsequently, temperature is obtained through contacting the sensor to the object to be measured, measuring the photo-electrical amount which is generated by the light beam irradiation and finally by comparing the measuring line. In case of the C60 being used, highly accurate measurement in a range of 15 to 30 deg.C can be conducted.

公开(公告)号：JPH03257164A

公开(公告)日：1991-11-15

申请号：JP5435090

申请日：1990-03-06

Applicant: AGENCY IND SCIENCE TECHN

Inventor： MINAMI SHINJI ,  ASAI MICHIHIKO

IPC: G01B11/06 ,  C23C14/12 ,  C23C14/54

Abstract: PURPOSE:To improve the detection sensitivity in a region where a film thickness is small by depositing a required org. compd. by evaporation on a substrate, irradiating the substrate with light with lapse of time and measuring the generated surface photoelectric current. CONSTITUTION:While a prescribed high voltage is held impressed between a pair of metallic electrodes, the org. compd. is deposited by vacuum evaporation on the substrate and the substrate is irradiated with light from above the substrate in parallel therewith. The photoelectric current generated by the photoirradiation increases with the growth of the vapor deposited film. The monitoring of the vapor deposition is possible by tracing this increase. The surface photoelectric current increases nearly exponential-functionally with an increase in the film thickness in the region where the film thickness is small and, therefore, the ratio of a change in the photoelectric current with respect to a change in the specified film thickness is extremely high and the increase in the film thickness is detected with an extremely high sensitivity.

公开(公告)号：JPS61202478A

公开(公告)日：1986-09-08

申请号：JP4316085

申请日：1985-03-05

Applicant: AGENCY IND SCIENCE TECHN ,  KAWAMURA INST CHEM RES

Inventor： MINAMI SHINJI ,  TANABE GIICHI ,  TSUDA KEISHIRO ,  YONEHARA YOSHITOMO ,  KINOSHITA SHOICHI

IPC: H01L51/42 ,  H01L51/30

Abstract: PURPOSE:To improve the stability in a dispersive phthalocyanine by electrochemically forming as a barrier electrode, and using a heat treated cadmium sulfide layer, thereby suppressing an aging deterioration. CONSTITUTION:A mixture of 0.15-4wt% part of polyvinylidene compound and 1-300wt% parts of solvent is uniformly dispersed to 1wt.pt of phthalocyanine by a ball mill, and the dispersant is coated by a spin coating method on a cadmium electrode 3. The dispersing time is generally 10min-5hr, and the coating on the electrode is 0.1-10mum of thickness at dry time. After this drying, a conductive film electrode 6 to become an ohmic electrode is formed by a vacuum depositing method. A glass substrate 5 is formed through a transparent conductive film 4 on the electrode 3.