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公开(公告)号：JPH03292742A
公开(公告)日：1991-12-24
申请号：JP9432390
申请日：1990-04-10
Applicant: AGENCY IND SCIENCE TECHN , MITSUBISHI CHEM IND
Inventor： SUZUKI KATSUHIRO , YAJIMA HIROYOSHI , SHIMADA JUNICHI , KATOU TAKANORI , SHIMOYAMA KENJI , GOTO HIDEKI
IPC: H01L29/20 , H01L21/337 , H01L29/808 , H01S5/00 , H01S5/30
Abstract: PURPOSE:To obtain a semiconductor device, which can be used as a transistor and as a laser oscillator and can be manufactured easily, by a method wherein an active layer and clad layers, which come into contact to both ends of the active layer, are doped into an N-type, a clad layer under the active layer is used as a high-resistance layer and a clad layer on the active layer is doped into a P-type. CONSTITUTION:A high-resistance layer, an AlxGa1-xAs layer (undoped) 15, is epitaxially grown on a semi-insulative GaAs substrate 19 and an N-type GaAs active layer 14 is epitaxially grown thereon. The N-type GaAs layer is a doped layer and moreover, a P-type AlyGa1-yAs layer 13 is epitaxially grown thereon. The layer 13 is also a doped layer. A P-type GaAs layer 16 is epitaxially grown, a silicon nitride film is deposited on this layer 16 and after this silicon nitride film is patterned by a photolithography method, the silicon nitride film situated at parts, which are used as source and drain parts, is removed.
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公开(公告)号：JPH02144983A
公开(公告)日：1990-06-04
申请号：JP29935788
申请日：1988-11-25
Applicant: AGENCY IND SCIENCE TECHN , MITSUBISHI CHEM IND
Inventor： SUZUKI KATSUHIRO , YAJIMA HIROYOSHI , SHIMADA JUNICHI , SHIMOYAMA KENJI , GOTO HIDEKI
Abstract: PURPOSE:To enable large area light emission by dividing the active layer into small parts so that a plurality of layers are provided, with area per layer being the same as in the past, and making the total thickness of the active layers larger. CONSTITUTION:A semi-insulating AlGaAs clad layer 125 is formed on a substrate 127, and active layers 119, 121, 123 sandwiched between P-type clad layers 111, 115 and N-type clad layers 113, 117 are further laminated thereon. A semi-insulating AlGaAs clad layer 109 is formed on these layers 119, 121, 123, and a P-type clad layer 105 and an N-type clad layer 107 are buried and formed on the left and right sides thereof, and electrodes 101, 103 are formed on the P-type clad layer 105 and the N-type clad layer 107. In this construction, when a current is caused to flow between the (+) electrode 101 and the (-) electrode 103, positive holes and electrons are injected into respective active layers with small energy band gap from the upper and lower clad layers and right and left clad layers. Accordingly, electrons and positive holes are injected into the respective active layers over a wide area. Thus, high carrier density per active layer can be maintained and large area light emission is possible without lowering the light emission efficiency.
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公开(公告)号：JPS6430285A
公开(公告)日：1989-02-01
申请号：JP18709287
申请日：1987-07-27
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MUKAI SEIJI , YAJIMA HIROYOSHI , WATANABE MASANOBU , ITO HIDEO
IPC: H01S5/00
Abstract: PURPOSE:To reduce the number of lithography processes at least from two to one by a method wherein, after left and right cladding layers are formed on both the sides of a rib structure, semiconductor layers which has a property of not growing on the upper cladding layer of the rib structure and a function of masking for introducing an impurity into the upper cladding layer are formed on the left and right cladding layers. CONSTITUTION:On both the left and right sides of a rib structure 5, p-type AlzGa1-zAs layers 16 and n-type AlzGa1-zAs layers 7 are successively built up. Then p-type GaAs semiconductor layers 20 which does not grow or a p-type AlxGa1-xAs layer 4 with the properly selected composition ratio as the upper cladding layer 4 of the rib structure 5 but grows only on the left and right n-type AlzGa1-zAs upper cladding layers 7 are built up. If a suitable impurity such as Zn is introduced into the whole surfaces of the semiconductor layers 20 between which an aperture 21 is formed in a self-alignment manner by a method such as diffusion, the p-type GaAs layers 20 can be practically utilized as diffusion masks and a required impurity diffused layer (Zn diffused layer) 22 can be formed only in the region mainly from the top surface of the upper cladding layer 4 of the rib structure 5 to the required depth.
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公开(公告)号：JPS643025A
公开(公告)日：1989-01-06
申请号：JP15852087
申请日：1987-06-25
Applicant: AGENCY IND SCIENCE TECHN , HITACHI CABLE
Inventor： YAJIMA HIROYOSHI , ISHIHARA SATOSHI , MIHASHI YOSHINOBU , UETSUKA NAOTO
Abstract: PURPOSE:To enable the formation of a glass film of uniform thickness by allowing the base for depositing a glass film thereon to get near or away to the oxyhydrogen flame at the top of the burner, as it is rotating. CONSTITUTION:Base plates 2 for a glass film to be deposited are arranged on the surface periphery of the turn table 3 rotating at a constant speed and glass fine particles are blown from the deposition nozzle 7 on the top surfaces of the bases 2 to form a glass film on each base plate. At this time, the system is provided with a transferring unit (consisting of, e.g., a control motor 16, screw mechanism 15, moving bed 14, and shaft 20) which can allow the turn table 3 as well as the base plates 2 on the turn table 3 to get near or away to the deposition nozzle 7.
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公开(公告)号：JPH02144981A
公开(公告)日：1990-06-04
申请号：JP29935588
申请日：1988-11-25
Applicant: AGENCY IND SCIENCE TECHN , MITSUBISHI CHEM IND
Inventor： SUZUKI KATSUHIRO , YAJIMA HIROYOSHI , SHIMADA JUNICHI , SHIMOYAMA KENJI , GOTO HIDEKI
Abstract: PURPOSE:To improve electric separation between electrodes without decreasing the doping amount for N-type and P-type clad layers and a cap layer and without increasing the forward resistance in PN junction by burying a carrier injected clad layer in an island shape and separating respective carrier injected clad layers with a high resistance layer from each other. CONSTITUTION:A double hetero structure, in which a GaAs active layer 137 is sandwiched between undoped AlGaAs clad layers 133, 135, is formed on a semi-insulating substrate 131, and the right and left side parts thereof are dug and a P-AlGaAs clad layer 139, a P-GaAs cap layer 140, a N-AlGaAs clad layer 141, an N-GaAs cap layer 142 are selectively grown respectively. When these carrier injected clad layers are selectively grown, each carrier injected clad layer is buried in an island shape so that a high resistance undoped clad layer is left between the clad layers. Thus, electrodes 113a, 113b, 115a, 115b are formed on the respective electrically separated carrier injected clad layers. Good electric separation is achieved because the high resistance undoped clad layer is left between the electrodes 113a, 113b, 115a, 115b.
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Patent Agency Ranking
公开(公告)号：JPH0222630A
公开(公告)日：1990-01-25
申请号：JP17234188
申请日：1988-07-11
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MUKAI SEIJI , YAJIMA HIROYOSHI , WATANABE MASANOBU , ITO HIDEO
Abstract: PURPOSE:To obtain the element which has no mechanically moving parts, is small in size and make space modulation of the light controllable from the outside by providing a carrier density distribution control means which can form carriers of the density distribution of the prescribed pattern nonuniform along the transverse direction orthogonal with a light propagation direction. CONSTITUTION:The density distribution of the carriers generated in a light guide 13 to allow the passage of the light to be space-modulated by using a stock capable of generating the carriers is controlled to control the phase distribution of the light propagating in the waveguide. The optical phase distribution control element 10 is formed by using an n-GaAs substrate as a substrate 11, and laminating an n-AIxGa1-xAs layer 12 having a low refractive index as a lower light confining layer, an AIyGa1-yAs layer 13 having a high refractive index as the light guide, and p-AIzGa1-zAs layer 14 having a low refractive index as an upper light confining layer. The deflection angle is controllable by the current ratio to be impressed to a pair of control electrodes 21-1, 21-2 in this case. The light phase distribution control element with which the high- speed operation can be expected and which allows the easy control from the outside while the size is small is obtd. in this way.
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公开(公告)号：JPS6444079A
公开(公告)日：1989-02-16
申请号：JP20143187
申请日：1987-08-12
Applicant: AGENCY IND SCIENCE TECHN , HITACHI CABLE
Inventor： YAJIMA HIROYOSHI , ISHIHARA SATOSHI , MIHASHI YOSHINOBU , UETSUKA NAOTO , HONGO AKISHI
Abstract: PURPOSE:To perform a CO2 laser which has a small size and does not need a forced cooling by providing a waveguide formed of a clad layer in a quartz glass body. CONSTITUTION:A waveguide 5 formed with a tubular air gap formed in a quartz glass body 1 and a clad layer 4 formed on the inner peripheral wall of the air gap, Brewster's windows 6, 7 and resonance mirrors 8, 9 so buried in the body 1 as to seal the waveguide 5 and to cross the waveguide 5, and a pair of electrodes 10, 11 provided to extend from the waveguide 5 out of the body 1 are provided. CO2 gas is sealed in the waveguide 5. That is, the waveguide 5 is provided in a quartz glass body instead of a discharging glass tube, and the gas is sealed in the waveguide 5. Thus, a miniature CO2 laser having, for example, several cm long is performed, and since it has a small size, forced cooling with water is not required, but a heat sink fin may be sufficiently used.
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公开(公告)号：JPS6424207A
公开(公告)日：1989-01-26
申请号：JP18012087
申请日：1987-07-21
Applicant: AGENCY IND SCIENCE TECHN , HITACHI CABLE
Inventor： MIHASHI YOSHINOBU , ISHIHARA SATOSHI , YAJIMA HIROYOSHI , UETSUKA NAOTO
Abstract: PURPOSE:To obtain a desired branching ratio by projecting a CO2 laser on the clads positioned between the cores of tapered parts and removing part thereof in such a manner that the branching ratio of a coupler attains a prescribed value. CONSTITUTION:After the laser light emitted form a CO2 laser device 8 is curved downward by a mirror 9, the laser light is condensed by a lens 10 and is projected on the clads 5 positioned between the cores 3 and 4 of the tapered parts 7. Since the CO2 laser light has large absorption in SiO2 glass, the laser light irradiated part of the clads 5 consisting of the SiO2 glass are instantaneously evaporated and removed. The coupling from the cores 3 to the cores 4 is mainly executed in a coupling part 6 at this time, but part of the coupling takes place in the tapered parts 7 as well and, therefore, the coupling constant is changed by partly removing the clads 5 between the cores of the tapered parts. The branching ratio (PC:PT) of the coupler is thus adjusted by changing the amt. of the clads 5 to be removed.
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公开(公告)号：JPS63239134A
公开(公告)日：1988-10-05
申请号：JP7538587
申请日：1987-03-27
Applicant: AGENCY IND SCIENCE TECHN , HITACHI CABLE
Inventor： MIHASHI YOSHINOBU , ISHIHARA SATOSHI , YAJIMA HIROYOSHI , UETSUKA NAOTO
IPC: G02B6/00 , C03B8/04 , C03B19/14 , C03B37/014 , C03B37/018 , G02B6/13
Abstract: PURPOSE:To deposit glass corpuscles on many substrates in uniform thickness by specifying the rotational speed of the substrate arranged on a turntable rotating at fixed angular velocity and the translational velocity of a burner supplying glass corpuscles. CONSTITUTION:The substrate is arranged on the truntable 1 rotating at fixed angular velocity omega at the position of the radius gamma distant from the center of the turntable 1. Position gamma at the tip 51 of the burner on the turntable 1 is transformed into a voltage V by a potentiometer 52, the voltage V is read by a voltmeter 53 and a controller 54, the voltage proportional to 1/gamma is impressed on a DC motor 56 through a DC power source 55, and the burner 3 is translationally moved by the burner fixing arm 58 fixed to a trapezoidal screw thread 57. The rotational speed gammaomega of the substrate and the translational velocity dr/dt of the burner 3 are limited to conform to inequalities I and II, and glass corpuscles are supplied from the burner 3 and deposited on the substrate.
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公开(公告)号：JPS62157014A
公开(公告)日：1987-07-13
申请号：JP29910685
申请日：1985-12-28
Applicant: AGENCY IND SCIENCE TECHN
Inventor： WATANABE MASANOBU , ITO HIDEO , MUKAI SEIJI , YAJIMA HIROYOSHI
Abstract: PURPOSE:To obtain an element which has a high-grade function and a large number of degrees of freedom, by receiving a part of the optical output of a double electrode semiconductor laser by a photodetector and feeding back positively it to the double electrode semiconductor laser. CONSTITUTION:If an optical input Pi is increased from 0 to P2 P4 P1 P3 continuously when an optical feedback rate (f) is relatively high and a triple stable point exists, the characteristic line of a photodetector 2 is moved right in the figure. An optical output P0 is in the level L first because light is not emitted, and the optical output P0 is switched from the level L to the level M when the optical input Pi exceeds P1, and the optical output P0 is switched from the level M to the level H when the optical input Pi exceeds P3. If the optical input Pi is reduced continuously, the optical output P0 is switched from the level H to the level M when the optical input Pi is smaller than P4, and the optical output P0 is switched from the level M to the level L when the optical input Pi is smaller than P2. Thus, this element can be used as a ternary storage element.
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