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公开(公告)号：JPS6430285A
公开(公告)日：1989-02-01
申请号：JP18709287
申请日：1987-07-27
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MUKAI SEIJI , YAJIMA HIROYOSHI , WATANABE MASANOBU , ITO HIDEO
IPC: H01S5/00
Abstract: PURPOSE:To reduce the number of lithography processes at least from two to one by a method wherein, after left and right cladding layers are formed on both the sides of a rib structure, semiconductor layers which has a property of not growing on the upper cladding layer of the rib structure and a function of masking for introducing an impurity into the upper cladding layer are formed on the left and right cladding layers. CONSTITUTION:On both the left and right sides of a rib structure 5, p-type AlzGa1-zAs layers 16 and n-type AlzGa1-zAs layers 7 are successively built up. Then p-type GaAs semiconductor layers 20 which does not grow or a p-type AlxGa1-xAs layer 4 with the properly selected composition ratio as the upper cladding layer 4 of the rib structure 5 but grows only on the left and right n-type AlzGa1-zAs upper cladding layers 7 are built up. If a suitable impurity such as Zn is introduced into the whole surfaces of the semiconductor layers 20 between which an aperture 21 is formed in a self-alignment manner by a method such as diffusion, the p-type GaAs layers 20 can be practically utilized as diffusion masks and a required impurity diffused layer (Zn diffused layer) 22 can be formed only in the region mainly from the top surface of the upper cladding layer 4 of the rib structure 5 to the required depth.
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公开(公告)号：JPH0613714A
公开(公告)日：1994-01-21
申请号：JP25965791
申请日：1991-09-11
Applicant: AGENCY IND SCIENCE TECHN
Inventor： WATANABE MASANOBU
Abstract: PURPOSE:To generate a crossover mode and a bistable property in optional light output by generating a crossover mode with which the emitted light distribution on both edge faces makes a mirror image with each other by the simultational oscillation of two resonance modes. CONSTITUTION:WG1 to WG4 are formed by dividing an active waveguide region into four parts, and the power outputted from the WG1 to WG4 is formed into P1 to P4. When a carrier (carrier density N2 to N4) has oblique distribution, the light pattern emitted from both edge faces make a crossover mode and a mirror image is formed. When the carrier has an oblique distribution as above-mentioned, the light distribution of a resonant transverse mode, which does not change its shape even after making a round-trip, also has an oblique distribution. The shape of the two resonance modes is almost determined by the distribution of refractive index, and the selection of either of the above- mentioned modes (or both of them) is determined by gain distribution. A crossover mode can be generated against the light output in a wide range by making a calculation taking into consideration of the simultaneous oscillation of two modes.
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公开(公告)号：JP2000068608A
公开(公告)日：2000-03-03
申请号：JP23684898
申请日：1998-08-24
Applicant: AGENCY IND SCIENCE TECHN
Inventor： SHIMIZU MITSUTOSHI , OKUMURA HAJIME , SHIRAKASHI JUNICHI , WATANABE MASANOBU
IPC: H01L21/308 , H01L33/32 , H01S5/00 , H01S5/323 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To enable wet etching with little damage by etching chemically stable gallium nitride using reactive pyrophosphoric acid. SOLUTION: A gallium nitride growing substrate, a holding device or the like are pre-heated to the same temperature as an etching temperature. Then the gallium nitride growing substrate is soaked in pyrophosphoric acid to be etched. Optimum time to soak should be calculated by pre-conditioning. A temperature of pyrophosphoric acid should be also calculated similarly. Pyrophosphoric acid can be obtained by dehydrating orthophosphoric acid which is usually used. Or it can be obtained by adding water of a suitable ratio to phosphorus oxide. In addition, sufficient etching speed can be obtained by raising the temperature of the pyrophosphoric acid to a high temperature ranging from 210 to 220 deg.C or higher. Then after the time required for etching, materials are taken out, and the pyrophosphoric acid remaining on surfaces is removed using pure water.
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公开(公告)号：JPH0653610A
公开(公告)日：1994-02-25
申请号：JP25965691
申请日：1991-09-11
Applicant: AGENCY IND SCIENCE TECHN
Inventor： WATANABE MASANOBU , MUKAI SEIJI , MATSUBARA KOJI , YAJIMA HIROYOSHI
Abstract: PURPOSE:To generate crossing mode and also, changing the light output ratio by the adjustment of its gain difference so as to improve the output ratio, in the case that the length of a laser resonator is longer than the length of the coupled two waveguide paths, by making the gain of the clad between anodes enough larger than the outer clad. CONSTITUTION:An n-GaAs layer 2, an n-AlGaAs layer 3, a GaAs active layer 4, a p-AlGaAs 5, a p-GaAs layer 6, and an SiN insulating layer 7 are forming order on a GaAs substrate 1. Waveguide paths parallel with each other are formed below two parallel electrodes 10 and 11. To generate crossing mode in the case that a resonator L is longer than the coupled length Lc of the two waveguide paths, that is, in case that L>Lc, the gain of an even analogous mode needs to be raised. To raise the gain of the even analogous mode, it is required only to raise the gain of the clad area C between anodes higher than especially outer clad areas A and E, whereby it is made into a mesa structure, and the active layer is made uniform GaAs.
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公开(公告)号：JPH0563303A
公开(公告)日：1993-03-12
申请号：JP25310891
申请日：1991-09-04
Applicant: AGENCY IND SCIENCE TECHN
Inventor： OGURA MUTSURO , WATANABE MASANOBU , ITO HIDEO , MORI MASAHIKO , MUKAI SEIJI , YAJIMA HIROYOSHI , CHIN TOMOO
IPC: H01S5/00
Abstract: PURPOSE:To manufacture the title optical functional element in optical waveguide structure discharging satisfactory optical confining function in simple process on a substrate while reducing the obstruction factor to the increase in the integration degree as well as gaining the freedom of layout. CONSTITUTION:A pair of insulating films 3, 3 in specific width are formed on an n-GaAs substrate 2. Next, an AlGaAs lower side clad layer 6, a GaAs waveguide layer 7 and an AlGaAs upper side clad layer 8 are successively grown by MOCVD step on the substrate main surface exposed by a striped window 4 between the pair of insulating films 3, 3 so As to erect an optical waveguide structure. In such a constitution, if the main surface of the substrate 2 comprises (1, 0, 0) surfaces, the side surfaces of the optical waveguide structure have the oblique surfaces comprising B surfaces (1, 1, 1).
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Patent Agency Ranking
公开(公告)号：JPH03278490A
公开(公告)日：1991-12-10
申请号：JP7841590
申请日：1990-03-27
Applicant: AGENCY IND SCIENCE TECHN
Inventor： WATANABE MASANOBU , IAN HIYUU HOWAITO , JIYON EDOWAADO KIYARORU
Abstract: PURPOSE:To clarify the condition of the generation of a crossing mode in a twin stripped laser and further ensure bistability between the crossing mode by performing computer simulation and a theoretical analysis. CONSTITUTION:There are successively formed on a GaAs substrate 1 an n-GaAs 2, an n-Al0.35Ga0.65As 3, an Al0.05Ga0.95As active layer 4, a p-Al0.35Ga0.65As 5, a p-GaAs layer 6 and an SiN insulating layer 7. Then, metal layers 8, 9 each comprising Ni/AuGe/Ni and Cr/Au are provided on opposite sides of the substrate. Waveguides parallel to each other are formed at the lower part of parallel two electrodes 10, 11. When the cavity length L of a laser resonator is shorter than a coupling length Lc (in the two parallel waveguides, a length where light existent at one waveguide is transferred to the other) a bistable laser generating a crossing mode can be ensured.
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公开(公告)号：JPS61236190A
公开(公告)日：1986-10-21
申请号：JP7802185
申请日：1985-04-12
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MUKAI SEIJI , YAJIMA HIROYOSHI , WATANABE MASANOBU , ITO HIDEO
IPC: H01S5/00
Abstract: PURPOSE:To make the two-dimensional switching of the radiated beam possible in the direction of scanning or diflection, by providing a electron density distribution in an active layer controlled by the electrode with the gradient not only in the direction of the plane parallel to the element substrate but also in the other directions. CONSTITUTION:On the P-type semiconductor substrate 101, the N-type semiconductor 102 is grown, on which the groove 102a for current injection is formed. The P-type semiconductor 103, the N-type semiconductors 104, 105 and 106, and the P-type semiconductors 107 and 108 are grown. After the insulation film 109 is formed, the grooves 109a for current injection is installed thereon, and the electrodes 101, 111 and 112 for current injection are formed. When the voltage is impressed between the electrodes 112 and 111, the current is injected from the groove 109a and the active region 113b emits light. On the other hand, when the voltage is impressed between the electrodes 110 and 111, the current is injected from the groove 109b, and the lower active region 113a emits light. As the injection currents into the active regions 113a and 113b can be independently controlled, the gradient of the injection current density between the active layers can be controlled. Thus, the deflection of beam occurs in the upper and lower directions in the semiconductor layers.
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公开(公告)号：JPH11326853A
公开(公告)日：1999-11-26
申请号：JP13522898
申请日：1998-05-18
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MATSUBARA KOJI , WATANABE MASANOBU , NIKI SAKAE
Abstract: PROBLEM TO BE SOLVED: To provide an optical modulator generating a strong electric field in an electro-optic crystal waveguide with a small applied voltage and producing a large change in a refractive index of light, and a manufacturing method thereof. SOLUTION: A modulation voltage is reduced by a structure to holding an optical waveguide 1 between upper and lower modulation electrodes 4, 6, 7 and arranging it so that all the components of an applied electric field contribute to the electro-optical effect. Normally, since a waveguide having the electro- optical effect is crystal, a metal material cannot be used as the lower electrode. Therefore, the structure is achieved by adopting a conductive crystal material as the lower electrode 4, and letting waveguide crystal grow hetero-epitaxially thereon.
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公开(公告)号：JPH09257915A
公开(公告)日：1997-10-03
申请号：JP6217996
申请日：1996-03-19
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ITO HIDEO , MUKAI SEIJI , WATANABE MASANOBU , DEIITAA BURANDORU , UIRUHERUMU SUTOOKU
Abstract: PROBLEM TO BE SOLVED: To reduce the size and power consumption of a laser Doppler speed measuring instrument having a fringe movement function. SOLUTION: An outgoing laser beam IB of a beam deflection semiconductor laser 20 is made to enter a beam splitter 13 after through a collimator lens system 12 and then to pass through an optical path length controlling element 14. After that, two laser beams 11 and 12 are made to converge on a micro area zone on a face to be measured 17 by a convergent lens system. At measurement of a moving speed of the face to be measured 17, the laser beam IB outgoing from the beam deflection semiconductor laser source 210 is deflected within a range of an angle α.
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公开(公告)号：JPH0222630A
公开(公告)日：1990-01-25
申请号：JP17234188
申请日：1988-07-11
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MUKAI SEIJI , YAJIMA HIROYOSHI , WATANABE MASANOBU , ITO HIDEO
Abstract: PURPOSE:To obtain the element which has no mechanically moving parts, is small in size and make space modulation of the light controllable from the outside by providing a carrier density distribution control means which can form carriers of the density distribution of the prescribed pattern nonuniform along the transverse direction orthogonal with a light propagation direction. CONSTITUTION:The density distribution of the carriers generated in a light guide 13 to allow the passage of the light to be space-modulated by using a stock capable of generating the carriers is controlled to control the phase distribution of the light propagating in the waveguide. The optical phase distribution control element 10 is formed by using an n-GaAs substrate as a substrate 11, and laminating an n-AIxGa1-xAs layer 12 having a low refractive index as a lower light confining layer, an AIyGa1-yAs layer 13 having a high refractive index as the light guide, and p-AIzGa1-zAs layer 14 having a low refractive index as an upper light confining layer. The deflection angle is controllable by the current ratio to be impressed to a pair of control electrodes 21-1, 21-2 in this case. The light phase distribution control element with which the high- speed operation can be expected and which allows the easy control from the outside while the size is small is obtd. in this way.
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