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公开(公告)号：JPH08152933A
公开(公告)日：1996-06-11
申请号：JP12822994
申请日：1994-05-18
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ITO HIDEO , MUKAI SEIJI
Abstract: PURPOSE: To generate a membership function for fuzzy inference with a photoelectronically simplified device constitution. CONSTITUTION: The light emitting plane of a light emitting element array 10 is made to face the relevent incidental plane of a light position detecting device 30 for expressing where the centroid position of the distribution of light made incident on the incidental plane is set in one-dimensional direction by using electric signals Ip1 and Ip2. Plural light emitting elements 11 included in the light emitting element array 10 are divided into three groups G1, G2 and G3 so that one light emitting element 11 can be included in the first group G1 at the center, two light emitting elements 11 can be included in the second group G2 on the right side and three light emitting elements 11 can be included in the third group G3 on the left side. The light emitting elements 11 in the respective groups are respectively connected through a line, which is serially equipped with current limiting resistors R1, R2 and R3, to an input terminal to which an input voltage Vi is applied.
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公开(公告)号：JPH039331A
公开(公告)日：1991-01-17
申请号：JP14377389
申请日：1989-06-06
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ITO HIDEO , SUZUKI KATSUHIRO , YAJIMA HIROYOSHI , MORI MASAHIKO , MUKAI SEIJI
Abstract: PURPOSE:To achieve speedy operation by means of a simple structure by expressing each logical value of plural binary logic variables by the use of a combination of intensity of currents caused to indivisually flow into two or more places of the active layer of a beam deflecting laser. CONSTITUTION:Each logical value of the plural binary logic variables, which is an input variable, is expressed by a combination of intensity of currents caused to indivisually flow into two or more places of the active layer 13 of the beam deflecting laser 10. In this manner, a superimposed current is caused to flow into two or more places of the active layer 13 of the beam deflecting laser 10 according to a prescribed combination of current values, which meets a logical value of each of the plural binary logic variables; consequently, a direction in which a laser bean is emitted from the beam deflecting laser 10 is changed according to the combination. Thus, based on each laser beam emit ting direction, plural binary logic variables, given as an input, can be easily read by the use of a result operated according to an aimed logical operating expression.
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公开(公告)号：JPH04131918A
公开(公告)日：1992-05-06
申请号：JP25471490
申请日：1990-09-25
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ITO HIDEO , MUKAI SEIJI , YAJIMA HIROYOSHI
Abstract: PURPOSE:To simply the stably generate a fringe as a single semiconductor element without using any external optical parts by connecting optically two laser active areas to each other in a semiconductor laser structure. CONSTITUTION:The laser active areas 1-1 and 1-2 containing a laser beam radiating end face 5 or 6 respectively are formed in a single semiconductor laser structure 7 and at the same time connected optically to each other. In this optical connection, both areas 1-1 and 1-2 are set sufficiently close to each other in the structure 7. In such a constitution, the lateral leakage beams of both laser active areas can enter these areas with each other via a high refractive index layer part 13. Thus it is possible to stably generate a fringe as a single semiconductor element without using any external optical parts.
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公开(公告)号：JPS6430285A
公开(公告)日：1989-02-01
申请号：JP18709287
申请日：1987-07-27
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MUKAI SEIJI , YAJIMA HIROYOSHI , WATANABE MASANOBU , ITO HIDEO
IPC: H01S5/00
Abstract: PURPOSE:To reduce the number of lithography processes at least from two to one by a method wherein, after left and right cladding layers are formed on both the sides of a rib structure, semiconductor layers which has a property of not growing on the upper cladding layer of the rib structure and a function of masking for introducing an impurity into the upper cladding layer are formed on the left and right cladding layers. CONSTITUTION:On both the left and right sides of a rib structure 5, p-type AlzGa1-zAs layers 16 and n-type AlzGa1-zAs layers 7 are successively built up. Then p-type GaAs semiconductor layers 20 which does not grow or a p-type AlxGa1-xAs layer 4 with the properly selected composition ratio as the upper cladding layer 4 of the rib structure 5 but grows only on the left and right n-type AlzGa1-zAs upper cladding layers 7 are built up. If a suitable impurity such as Zn is introduced into the whole surfaces of the semiconductor layers 20 between which an aperture 21 is formed in a self-alignment manner by a method such as diffusion, the p-type GaAs layers 20 can be practically utilized as diffusion masks and a required impurity diffused layer (Zn diffused layer) 22 can be formed only in the region mainly from the top surface of the upper cladding layer 4 of the rib structure 5 to the required depth.
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Patent Agency Ranking
公开(公告)号：JPH09257915A
公开(公告)日：1997-10-03
申请号：JP6217996
申请日：1996-03-19
Applicant: AGENCY IND SCIENCE TECHN
Inventor： ITO HIDEO , MUKAI SEIJI , WATANABE MASANOBU , DEIITAA BURANDORU , UIRUHERUMU SUTOOKU
Abstract: PROBLEM TO BE SOLVED: To reduce the size and power consumption of a laser Doppler speed measuring instrument having a fringe movement function. SOLUTION: An outgoing laser beam IB of a beam deflection semiconductor laser 20 is made to enter a beam splitter 13 after through a collimator lens system 12 and then to pass through an optical path length controlling element 14. After that, two laser beams 11 and 12 are made to converge on a micro area zone on a face to be measured 17 by a convergent lens system. At measurement of a moving speed of the face to be measured 17, the laser beam IB outgoing from the beam deflection semiconductor laser source 210 is deflected within a range of an angle α.
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公开(公告)号：JPH0222630A
公开(公告)日：1990-01-25
申请号：JP17234188
申请日：1988-07-11
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MUKAI SEIJI , YAJIMA HIROYOSHI , WATANABE MASANOBU , ITO HIDEO
Abstract: PURPOSE:To obtain the element which has no mechanically moving parts, is small in size and make space modulation of the light controllable from the outside by providing a carrier density distribution control means which can form carriers of the density distribution of the prescribed pattern nonuniform along the transverse direction orthogonal with a light propagation direction. CONSTITUTION:The density distribution of the carriers generated in a light guide 13 to allow the passage of the light to be space-modulated by using a stock capable of generating the carriers is controlled to control the phase distribution of the light propagating in the waveguide. The optical phase distribution control element 10 is formed by using an n-GaAs substrate as a substrate 11, and laminating an n-AIxGa1-xAs layer 12 having a low refractive index as a lower light confining layer, an AIyGa1-yAs layer 13 having a high refractive index as the light guide, and p-AIzGa1-zAs layer 14 having a low refractive index as an upper light confining layer. The deflection angle is controllable by the current ratio to be impressed to a pair of control electrodes 21-1, 21-2 in this case. The light phase distribution control element with which the high- speed operation can be expected and which allows the easy control from the outside while the size is small is obtd. in this way.
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公开(公告)号：JPS62157014A
公开(公告)日：1987-07-13
申请号：JP29910685
申请日：1985-12-28
Applicant: AGENCY IND SCIENCE TECHN
Inventor： WATANABE MASANOBU , ITO HIDEO , MUKAI SEIJI , YAJIMA HIROYOSHI
Abstract: PURPOSE:To obtain an element which has a high-grade function and a large number of degrees of freedom, by receiving a part of the optical output of a double electrode semiconductor laser by a photodetector and feeding back positively it to the double electrode semiconductor laser. CONSTITUTION:If an optical input Pi is increased from 0 to P2 P4 P1 P3 continuously when an optical feedback rate (f) is relatively high and a triple stable point exists, the characteristic line of a photodetector 2 is moved right in the figure. An optical output P0 is in the level L first because light is not emitted, and the optical output P0 is switched from the level L to the level M when the optical input Pi exceeds P1, and the optical output P0 is switched from the level M to the level H when the optical input Pi exceeds P3. If the optical input Pi is reduced continuously, the optical output P0 is switched from the level H to the level M when the optical input Pi is smaller than P4, and the optical output P0 is switched from the level M to the level L when the optical input Pi is smaller than P2. Thus, this element can be used as a ternary storage element.
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公开(公告)号：JPH0563303A
公开(公告)日：1993-03-12
申请号：JP25310891
申请日：1991-09-04
Applicant: AGENCY IND SCIENCE TECHN
Inventor： OGURA MUTSURO , WATANABE MASANOBU , ITO HIDEO , MORI MASAHIKO , MUKAI SEIJI , YAJIMA HIROYOSHI , CHIN TOMOO
IPC: H01S5/00
Abstract: PURPOSE:To manufacture the title optical functional element in optical waveguide structure discharging satisfactory optical confining function in simple process on a substrate while reducing the obstruction factor to the increase in the integration degree as well as gaining the freedom of layout. CONSTITUTION:A pair of insulating films 3, 3 in specific width are formed on an n-GaAs substrate 2. Next, an AlGaAs lower side clad layer 6, a GaAs waveguide layer 7 and an AlGaAs upper side clad layer 8 are successively grown by MOCVD step on the substrate main surface exposed by a striped window 4 between the pair of insulating films 3, 3 so As to erect an optical waveguide structure. In such a constitution, if the main surface of the substrate 2 comprises (1, 0, 0) surfaces, the side surfaces of the optical waveguide structure have the oblique surfaces comprising B surfaces (1, 1, 1).
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公开(公告)号：JPS61236190A
公开(公告)日：1986-10-21
申请号：JP7802185
申请日：1985-04-12
Applicant: AGENCY IND SCIENCE TECHN
Inventor： MUKAI SEIJI , YAJIMA HIROYOSHI , WATANABE MASANOBU , ITO HIDEO
IPC: H01S5/00
Abstract: PURPOSE:To make the two-dimensional switching of the radiated beam possible in the direction of scanning or diflection, by providing a electron density distribution in an active layer controlled by the electrode with the gradient not only in the direction of the plane parallel to the element substrate but also in the other directions. CONSTITUTION:On the P-type semiconductor substrate 101, the N-type semiconductor 102 is grown, on which the groove 102a for current injection is formed. The P-type semiconductor 103, the N-type semiconductors 104, 105 and 106, and the P-type semiconductors 107 and 108 are grown. After the insulation film 109 is formed, the grooves 109a for current injection is installed thereon, and the electrodes 101, 111 and 112 for current injection are formed. When the voltage is impressed between the electrodes 112 and 111, the current is injected from the groove 109a and the active region 113b emits light. On the other hand, when the voltage is impressed between the electrodes 110 and 111, the current is injected from the groove 109b, and the lower active region 113a emits light. As the injection currents into the active regions 113a and 113b can be independently controlled, the gradient of the injection current density between the active layers can be controlled. Thus, the deflection of beam occurs in the upper and lower directions in the semiconductor layers.
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