公开(公告)号：WO2005019785A2

公开(公告)日：2005-03-03

申请号：PCT/US2004025825

申请日：2004-08-10

Applicant: ANALOG DEVICES INC ,  O'DOWD JOHN ,  MCCARTNEY DAMIEN JOSEPH ,  HUNT WILLIAM ,  HYNES EAMON ,  WYNNE JOHN M ,  CROWLEY PATRICK ,  MARTIN JOHN R

Inventor： O'DOWD JOHN ,  MCCARTNEY DAMIEN JOSEPH ,  HUNT WILLIAM ,  HYNES EAMON ,  WYNNE JOHN M ,  CROWLEY PATRICK ,  MARTIN JOHN R

IPC: G01L20060101 ,  G01L9/00 ,  G01L9/12 ,  G01L13/02 ,  G01L

CPC classification number: G01L9/0072 ,  G01L9/0073 ,  G01L9/0075 ,  G01L13/025 ,  G01L19/0076 ,  H01L2224/48091 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A capacitive sensor including a housing having a hermetically sealed cavity, a plate in the cavity, a diaphragm forming a part of the cavity and spaced from the plate, a conductive layer on the first diaphragm, and a second conductive layer on the plate, the first and second conductive layers being the electrodes of a capacitor whose capacitance varies with the position of the diaphragm relative to the plate.

Abstract translation: 一种电容式传感器，包括具有密封空腔的壳体，腔体中的板，形成腔的一部分并与板隔开的膜片，第一膜片上的导电层和板上的第二导电层， 第一和第二导电层是电容器的电极，其电容随着隔膜相对于板的位置而变化。

公开(公告)号：WO2010030460A3

公开(公告)日：2010-12-16

申请号：PCT/US2009053360

申请日：2009-08-11

Applicant: ANALOG DEVICES INC ,  MARTIN JOHN R ,  FREY TIMOTHY J ,  TSAU CHRISTINE H

Inventor： MARTIN JOHN R ,  FREY TIMOTHY J ,  TSAU CHRISTINE H

IPC: B81C1/00

CPC classification number: H01L23/10 ,  B81C1/00269 ,  B81C2203/0118 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/00

Abstract: A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/ germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.

Abstract translation: 形成惯性传感器的方法提供1）具有二维阵列惯性传感器的装置晶片和2）第二晶片，并将铝/锗合金沉积到一个或两个晶片上。 合金被沉积并图案化以形成多个闭合环。 该方法然后对准器件晶片和第二晶片，然后将合金定位在晶片之间。 接下来，该方法熔化合金，然后固化合金以在多个惯性传感器周围形成多个导电密封环。 密封环将装置晶片连接到第二晶片。 最后，该方法切割晶片以形成多个单独的气密密封惯性传感器。

公开(公告)号：WO2010030459A3

公开(公告)日：2010-12-16

申请号：PCT/US2009053350

申请日：2009-08-11

Applicant: ANALOG DEVICES INC ,  MARTIN JOHN R ,  TSAU CHRISTINE H ,  FREY TIMOTHY J

Inventor： MARTIN JOHN R ,  TSAU CHRISTINE H ,  FREY TIMOTHY J

IPC: B81C1/00

CPC classification number: H01L23/10 ,  B81C1/00269 ,  B81C2203/0118 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/00

Abstract: A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material.

Abstract translation: 微芯片具有将第一基板结合到第二基板的接合材料。 接合材料尤其具有稀土金属和其它材料。

公开(公告)号：WO2008086530A3

公开(公告)日：2008-12-18

申请号：PCT/US2008050924

申请日：2008-01-11

Applicant: ANALOG DEVICES INC ,  MARTIN JOHN R ,  ZHANG XIN

Inventor： MARTIN JOHN R ,  ZHANG XIN

IPC: B81B7/00

CPC classification number: B81C1/00269 ,  B81B7/0077 ,  B81B2203/053 ,  B81C99/0045 ,  Y10T29/49002

Abstract: A MEMS sensor includes a substrate having a MEMS structure movably attached to the substrate, a cap attached to the substrate and encapsulating the MEMS structure, and an electrode formed on the cap that senses movement of the MEMS structure.

Abstract translation: MEMS传感器包括具有可移动地附接到衬底的MEMS结构的衬底，附接到衬底并封装MEMS结构的帽以及形成在盖上的电极，其感测MEMS结构的运动。

公开(公告)号：EP1258035A4

公开(公告)日：2008-12-24

申请号：EP01905118

申请日：2001-01-29

Applicant: ANALOG DEVICES INC

Inventor： MARTIN JOHN R

IPC: H01L21/31 ,  H01L21/316 ,  B81B3/00 ,  B81C1/00 ,  H01L21/00 ,  H01L21/312 ,  H01L21/469

CPC classification number: H01L21/3122 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02263 ,  H01L24/05 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

Abstract: This invention disclosed a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.

公开(公告)号：EP1682859A4

公开(公告)日：2007-08-22

申请号：EP04780631

申请日：2004-08-10

Applicant: ANALOG DEVICES INC

Inventor： O'DOWD JOHN ,  MCCARTNEY DAMIEN JOSEPH ,  HUNT WILLIAM ,  HYNES EAMON ,  WYNNE JOHN M ,  CROWLEY PATRICK ,  MARTIN JOHN R

IPC: G01L1/04 ,  G01L20060101 ,  G01L1/12 ,  G01L9/00 ,  G01L9/12 ,  G01L13/00 ,  G01L13/02 ,  G01L17/00

CPC classification number: G01L9/0072 ,  G01L9/0073 ,  G01L9/0075 ,  G01L13/025 ,  G01L19/0076 ,  H01L2224/48091 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A capacitive sensor including a housing having a hermetically sealed cavity, a plate in the cavity, a diaphragm forming a part of the cavity and spaced from the plate, a conductive layer on the first diaphragm, and a second conductive layer on the plate, the first and second conductive layers being the electrodes of a capacitor whose capacitance varies with the position of the diaphragm relative to the plate.

Abstract translation: 一种电容式传感器，包括具有密封空腔的壳体，腔体中的板，形成腔的一部分并与板隔开的膜片，第一膜片上的导电层和板上的第二导电层， 第一和第二导电层是电容器的电极，其电容随着隔膜相对于板的位置而变化。

公开(公告)号：EP1366518A4

公开(公告)日：2009-03-11

申请号：EP02713792

申请日：2002-03-06

Applicant: ANALOG DEVICES INC

Inventor： MARTIN JOHN R ,  MORRISON RICHARD H JR

IPC: B81B7/00 ,  B81C1/00 ,  B81B3/00 ,  H01H57/00 ,  H01H59/00 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/02 ,  H01L23/52 ,  H01L23/522

CPC classification number: B81B7/0077 ,  B81B7/0064 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0154 ,  H01H59/0009 ,  H01L21/50 ,  H01L23/10 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/1433 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An in-situ cap for an integrated circuit device (10) such as a micromachined device and a method of making such a cap (40) by fabricating an integrated circuit element (122) on a substrate (14) ; forming a support layer (124) over the integrated circuit element (122) and forming a cap structure (22) in the support layer (124) covering the integrated circuit element (122).

Abstract translation: 原位帽在集成电路装置：诸如一个微机械加工装置，使通过在衬底集成电路元件上制造帽的搜索的方法; 形成在集成电路元件的支撑层以及形成在所述支撑层的帽结构覆盖该集成电路元件。