公开(公告)号：JP2006326834A

公开(公告)日：2006-12-07

申请号：JP2006217336

申请日：2006-08-09

Applicant: Analog Devices Inc ,  アナログ デバイシーズ インク

Inventor： MARTIN JOHN R ,  MORRISON JR RICHARD H

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  H01H57/00 ,  H01H59/00 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/02 ,  H01L23/52 ,  H01L23/522

CPC classification number: B81B7/0077 ,  B81B7/0064 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0154 ,  H01H59/0009 ,  H01L21/50 ,  H01L23/10 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/1433 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an improved in-site cap for an integrated circuit device including a micro machine device, a method for manufacturing the in-site cap, and provide such a cap and a method of using a basic IC circuit manufacturing process for manufacturing the cap. SOLUTION: The method for manufacturing the in-site cap (40) comprises the steps of forming an integrated circuit element (122) on a substrate (14) and the in-site cap for the integrated circuit device (10) such as a micro-machine, forming a support layer (124) on the integrated circuit element (122) and forming a cap structure (22) on the support layer (124) covering the integrated circuit element (122). COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供一种用于集成电路装置的改进的现场盖，包括微机装置，制造现场盖的方法，以及提供这种盖以及使用基本IC的方法 制造帽子的电路制造工艺。 解决方案：制造现场盖（40）的方法包括以下步骤：在衬底（14）上形成集成电路元件（122）和用于集成电路器件（10）的现场盖，如 作为微机，在集成电路元件（122）上形成支撑层（124），并在覆盖集成电路元件（122）的支撑层（124）上形成盖结构（22）。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：DE602005020148D1

公开(公告)日：2010-05-06

申请号：DE602005020148

申请日：2005-05-31

Applicant: ANALOG DEVICES INC

Inventor： MARTIN JOHN R ,  MENA MANOLO G ,  LACSAMANA ELMER S ,  DUFFY MICHAEL P ,  WEBSTER WILLIAM A ,  FELTON LAWRENCE E ,  KARPMAN MAURICE S

IPC: B81C1/00

Abstract: A method of producing a MEMS device removes the bottom side of a device wafer after its movable structure is formed. To that end, the method provides the device wafer, which has an initial bottom side. Next, the method forms the movable structure on the device wafer, and then removes substantially the entire initial bottom side of the device wafer. Removal of the entire initial bottom side effectively forms a final bottom side.

公开(公告)号：AU2002368046A1

公开(公告)日：2004-01-19

申请号：AU2002368046

申请日：2002-10-23

Applicant: ANALOG DEVICES INC

Inventor： COLLINS DAVID J ,  MARTIN JOHN R ,  WEBSTER WILLIAM A ,  FELTON LAWRENCE E ,  FARRELL PETER W ,  LUO JING

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/10

公开(公告)号：AU2002368046A8

公开(公告)日：2004-01-19

申请号：AU2002368046

申请日：2002-10-23

Applicant: ANALOG DEVICES INC

Inventor： WEBSTER WILLIAM A ,  COLLINS DAVID J ,  MARTIN JOHN R ,  FARRELL PETER W ,  LUO JING ,  FELTON LAWRENCE E

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/10

公开(公告)号：WO02074686A3

公开(公告)日：2003-02-06

申请号：PCT/US0151501

申请日：2001-12-05

Applicant: ANALOG DEVICES INC

Inventor： SPOONER TIMOTHY R ,  COURAGE DAVID S ,  HARNEY KIERAN P ,  FELTON LAWRENCE E ,  LUO JING ,  WORKMAN BRAD ,  MARTIN JOHN R

IPC: B81B7/00 ,  B81C1/00 ,  H01L21/68

CPC classification number: H01L21/6836 ,  B81C1/00888 ,  B81C1/00896 ,  H01L2221/68327

Abstract: A wafer cap protects micro electromechanical system ("MEMS") structures during a dicing of a MEMS wafer to produce individual MEMS dies. A MEMS wafer is prepared having a plurality of MEMS structure sites thereon. Upon the MEMS wafer, the wafer cap is mounted to produce a laminated MEMS wafer. The wafer cap is recessed in areas corresponding to locations of the MEMS structure sites on the MEMS wafer. The capped MEMS wafer can be diced into a plurality of MEMS dies without causing damage to or contaminating the MEMS die.

Abstract translation: 在MEMS晶片的切割期间，晶片盖保护微机电系统（“MEMS”）结构以产生单独的MEMS管芯。 制备具有多个MEMS结构位置的MEMS晶片。 在MEMS晶片上，安装晶片盖以产生层压的MEMS晶片。 晶片盖凹入与MEMS晶片上的MEMS结构位置的位置对应的区域中。 封装的MEMS晶片可以切割成多个MEMS管芯，而不会损坏或污染MEMS管芯。

公开(公告)号：WO2008086537A3

公开(公告)日：2008-12-18

申请号：PCT/US2008050941

申请日：2008-01-11

Applicant: ANALOG DEVICES INC ,  MARTIN JOHN R ,  YUN CHANGHAN

Inventor： MARTIN JOHN R ,  YUN CHANGHAN

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81B7/0077 ,  B81B2203/053 ,  B81C99/0045 ,  Y10T29/49002

Abstract: Aluminum or aluminum alloy on each of a pair of semiconductor wafers is thermocompression bonded. Aluminum-based seal rings or electrical interconnects between layers may be thus formed. On a MEMS device, the aluminum-based seal ring surrounds an area occupied by a movably attached microelectromechanical structure. According to a manufacturing method, wafers have an aluminum or aluminum alloy deposited thereon are etched to form an array of aluminum-based rings. The wafers are placed so as to bring the arrays of aluminum-based rings into alignment. Heat and compression bonds the rings. The wafers are singulated to separate out the individual semiconductor devices each with a bonded aluminum-based ring.

Abstract translation: 在一对半导体晶片中的每一个上的铝或铝合金被热压接合。 因此可以形成基于铝的密封环或层之间的电互连。 在MEMS器件上，铝基密封环围绕由可移动附接的微机电结构占据的区域。 根据制造方法，将沉积有铝或铝合金的晶片蚀刻以形成铝基环的阵列。 放置晶片以使铝基环阵列对齐。 热量和压缩结合环。 晶片被分离以分离出各自具有键合的铝基环的各个半导体器件。

公开(公告)号：WO2004003965A3

公开(公告)日：2004-04-29

申请号：PCT/US0233811

申请日：2002-10-23

Applicant: ANALOG DEVICES INC

Inventor： FELTON LAWRENCE E ,  FARRELL PETER W ,  LUO JING ,  COLLINS DAVID J ,  MARTIN JOHN R ,  WEBSTER WILLIAM A

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/10

CPC classification number: B81B7/0077 ,  B81C1/00896 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A MEMS capping method and apparatus uses a cap structure on which is formed a MEMS cavity, a cut capture cavity, and a cap wall. The cap wall is essentially the outer wall of the MEMS cavity and the inner wall of the cut capture cavity. The cap structure is bonded onto a MEMS structure such that the MEMS cavity covers protected MEMS components. The cap structure is trimmed by cutting through to the cut capture cavity from the top of the cap structure without cutting all the way through to the MEMS structure.

Abstract translation: MEMS封盖方法和装置使用其上形成有MEMS腔体，切割捕获腔体和盖壁的盖结构。 帽壁基本上是MEMS腔的外壁和切割捕获腔的内壁。 帽结构被结合到MEMS结构上，使得MEMS腔覆盖受保护的MEMS部件。 通过从帽结构的顶部切割到切割捕获空腔而不切割到MEMS结构，修剪帽结构。

公开(公告)号：WO2007022249A3

公开(公告)日：2007-05-18

申请号：PCT/US2006031958

申请日：2006-08-16

Applicant: ANALOG DEVICES INC ,  HARNEY KIERAN P ,  MARTIN JOHN R ,  FELTON LAWRENCE E

Inventor： HARNEY KIERAN P ,  MARTIN JOHN R ,  FELTON LAWRENCE E

IPC: B81B7/00

CPC classification number: B81B7/0064 ,  B81B2201/0257 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An apparatus has a leadframe based package base having a leadframe and a lid coupled with the package base. The lid and package base form a chamber for at least partially containing a microphone. The lid is electrically coupled with a given portion of the leadframe in the package base.

Abstract translation: 一种装置具有基于引线框架的封装基座，其具有引线框架和与封装基座耦合的盖子。 盖子和包装底座形成用于至少部分地容纳麦克风的腔室。 盖子与封装基座中的引线框架的给定部分电耦合。

公开(公告)号：WO2007022179A3

公开(公告)日：2007-05-18

申请号：PCT/US2006031825

申请日：2006-08-16

Applicant: ANALOG DEVICES INC ,  HARNEY KIERAN P ,  MARTIN JOHN R ,  FELTON LAWRENCE E

Inventor： HARNEY KIERAN P ,  MARTIN JOHN R ,  FELTON LAWRENCE E

IPC: B81B7/00

CPC classification number: B81B7/007 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A package for a micro-electromechanical (MEMS) device is described. A premolded leadframe base has opposing top and bottom surfaces. Each surface is defined by a topology having at least one electrically conductive portion and at least one electrically non-conductive portion, and the topology of the top surface differs from the topology of the bottom surface.

Abstract translation: 描述了用于微机电（MEMS）装置的封装。 预制的引线框架底座具有相对的顶部和底部表面。 每个表面由具有至少一个导电部分和至少一个非导电部分的拓扑结构限定，并且顶表面的拓扑与底表面的拓扑不同。

公开(公告)号：WO2006116017A2

公开(公告)日：2006-11-02

申请号：PCT/US2006014982

申请日：2006-04-21

Applicant: ANALOG DEVICES INC ,  MARTIN JOHN R ,  BROSNIHAN TIMOTHY J ,  CORE CRAIG ,  NUNAN THOMAS ,  WEIGOLD JASON ,  ZHANG XIN

Inventor： MARTIN JOHN R ,  BROSNIHAN TIMOTHY J ,  CORE CRAIG ,  NUNAN THOMAS ,  WEIGOLD JASON ,  ZHANG XIN

IPC: H04R19/00

CPC classification number: H04R3/00 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81C1/00182 ,  H01L2224/48137 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/15151 ,  H04R19/005 ,  H04R2499/11

Abstract: A micromachined microphone is formed from a silicon or silicon-on- insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.

Abstract translation: 微机械麦克风由硅或绝缘硅绝缘体（SOI）晶片形成。 用于麦克风的固定感测电极由晶片的顶部硅层形成。 通过沉积形成结构的至少一个氧化物层，然后通过形成的沟槽从顶部硅层的背面去除结构物下面的氧化物的一部分，形成在顶部硅层前侧上的各种多晶硅麦克风结构 通过顶层硅层。 沟槽允许声波从顶部硅层的背面到达隔膜。 在SOI晶片中，通过底部硅层和中间氧化物层形成空腔，以露出沟槽，以去除氧化物并允许声波到达隔膜。 惯性传感器可以形成在相同的晶片上，其中各种惯性传感器结构基本上在同一时间形成并且使用与对应的麦克风结构基本上相同的过程。