公开(公告)号：US20220208542A1

公开(公告)日：2022-06-30

申请号：US17470177

申请日：2021-09-09

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US20220181163A1

公开(公告)日：2022-06-09

申请号：US17457764

申请日：2021-12-06

Applicant: ASM IP HOLDING B.V.

Inventor： Andrea Illiberi ,  Varun Sharma ,  Michael Givens ,  Marko Tuominen ,  Shaoren Deng

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/46 ,  C23C16/56

Abstract: The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibition material on the substrate to fill the recess with inhibition material, removing the inhibition material from the substrate for exposing a deposition area and depositing a layer on the deposition area by a vapor deposition process. A vapor deposition assembly for performing the method is also disclosed.

公开(公告)号：US20210159077A1

公开(公告)日：2021-05-27

申请号：US17096444

申请日：2020-11-12

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Shaoren Deng ,  Jan Willem Maes

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3213

Abstract: Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are disclosed. The methods may include: contacting the substrate with a plasma generated from a hydrogen containing gas, selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film, and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.

公开(公告)号：US20200325573A1

公开(公告)日：2020-10-15

申请号：US16836151

申请日：2020-03-31

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Michael Eugene Givens ,  Shaoren Deng ,  Giuseppe Alessio Verni

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods for selective deposition of metal oxide films on metal or metallic surfaces relative to oxide surfaces are provided. An oxide surface of a substrate may be selectively passivated relative to the metal or metallic surface, such as by exposing the substrate to a silylating agent. A metal oxide is selectively deposited from vapor phase reactants on the metal or metallic surface relative to the passivated oxide surface.

公开(公告)号：US12217954B2

公开(公告)日：2025-02-04

申请号：US17407839

申请日：2021-08-20

Applicant: ASM IP Holding B.V.

Inventor： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC: H01L21/02 ,  B08B3/08 ,  B08B5/00 ,  C11D7/02 ,  C11D7/24 ,  C11D7/26 ,  C23C16/02 ,  H01L21/285

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

公开(公告)号：US20240312790A1

公开(公告)日：2024-09-19

申请号：US18389847

申请日：2023-12-20

Applicant: ASM IP Holding B.V.

Inventor： Eva Tois ,  Shaoren Deng ,  Daniele Chiappe ,  Viraj Madhiwala ,  Marko Tuominen ,  Vincent Vandalon

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01L21/31111 ,  H01L21/67075 ,  H01L21/67086

Abstract: The current disclosure relates to methods of selectively etching a material. The method includes contacting a substrate having a first surface and a second surface with an etching liquid to selectively etch the first surface relative to the second surface, and the first surface comprises etchable material and the second surface is covered with a polyimide-comprising layer. The disclosure further relates to methods of forming a semiconductor device and to a semiconductor device. Further, the disclosure relates to methods of forming patterned features on a substrate, and to a semiconductor processing system.

公开(公告)号：US20240218500A1

公开(公告)日：2024-07-04

申请号：US18397722

申请日：2023-12-27

Applicant: ASM IP Holding B.V.

Inventor： Anirudhan Chandrasekaran ,  Daniele Chiappe ,  Eva E. Tois ,  Viraj Madhiwala ,  Andrea Illiberi ,  Shaoren Deng

IPC: C23C16/04 ,  C23C16/18

CPC classification number: C23C16/04 ,  C23C16/18

Abstract: Methods for forming selective passivation layers on a first dielectric surface relative to a second metallic surface are disclosed. Methods for utilizing selective passivation layers for depositing target films as also disclosed. Exemplary structures that include selective passivation layers are further disclosed.

公开(公告)号：US20240076775A1

公开(公告)日：2024-03-07

申请号：US18303095

申请日：2023-04-19

Applicant: ASM IP HOLDING B.V.

Inventor： Andrea Illiberi ,  Giuseppe Alessio Verni ,  Shaoren Deng ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Michael Givens

IPC: C23C16/40 ,  B01J31/12 ,  C23C16/455

CPC classification number: C23C16/401 ,  B01J31/122 ,  C23C16/45534 ,  C23C16/45553

Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

公开(公告)号：US11898240B2

公开(公告)日：2024-02-13

申请号：US17216466

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Giuseppe Alessio Verni ,  Shaoren Deng ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Michael Givens

IPC: C23C16/04 ,  B01J21/02 ,  C23C22/82 ,  C23C22/77 ,  C23C16/40

CPC classification number: C23C16/04 ,  B01J21/02 ,  C23C16/402 ,  C23C22/77 ,  C23C22/82

Abstract: Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.

公开(公告)号：US20230140367A1

公开(公告)日：2023-05-04

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea llliberi ,  Vincent Vandalon

IPC: C23C16/40 ,  H01J37/32 ,  C23C16/455

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.