公开(公告)号：US12227835B2

公开(公告)日：2025-02-18

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/00 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

公开(公告)号：US20230227965A1

公开(公告)日：2023-07-20

申请号：US18153575

申请日：2023-01-12

Applicant: ASM IP Holding, B.V.

Inventor： Shaoren Deng ,  David Kurt de Roest ,  Vincent Vandalon ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Marko Tuominen

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/455 ,  C23C16/513 ,  C23C16/56

CPC classification number: C23C16/042 ,  C23C16/0272 ,  C23C16/0227 ,  C23C16/45523 ,  C23C16/513 ,  C23C16/56

Abstract: The disclosure relates to the manufacture of semiconductor devices, especially to methods and processing assemblies for forming a patterned structure on a substrate. The methods comprise providing the substrate comprising a first structure into a reaction chamber, wherein a surface of the first structure comprises a first material and the substrate comprises a second material, and selectively depositing a conformal passivation layer on the first material relative to the second material to cover the first structure, and selectively depositing an etch-stop layer on the second material relative to the passivation layer. In some embodiments, a multiple patterning or a tone reversal of a pattern may be performed using the methods and deposition assemblies of the disclosure.

公开(公告)号：US20250069883A1

公开(公告)日：2025-02-27

申请号：US18810573

申请日：2024-08-21

Applicant: ASM IP Holding B.V.

Inventor： Vincent Vandalon ,  Marko Tuominen ,  Krzysztof Kamil Kachel ,  YongGyu Han ,  Nadadur Veeraraghavan Srinath ,  Kranthi Kumar Vaidyula ,  Shaoren Deng

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: The disclosure relates to methods of selectively depositing an oxide material layer on a first surface of a semiconductor substrate relative to a second surface of the same substrate, to semiconductor processing assemblies, as well as to oxide material layers, structures and devices comprising an oxide material layer deposited according to the current disclosure. In the method, an oxide material layer is selectively deposited using a first precursor and an oxygen precursor. The second surface may be passivated against deposition of oxide material.

公开(公告)号：US12183546B2

公开(公告)日：2024-12-31

申请号：US17196374

申请日：2021-03-09

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  YongGyu Han ,  SangJean Jeon ,  DooHan Kim ,  SangYeop Lee

IPC: H01J37/32 ,  C23C16/505

Abstract: A substrate processing apparatus capable of removing signal interference between reactors includes: a first reactor, a second reactor adjacent to the first reactor, and a power generator configured to supply first power to the first reactor and supply second power to the second reactor, wherein the power generator is further configured to synchronize phases of the first power and the second power.

公开(公告)号：US20240213033A1

公开(公告)日：2024-06-27

申请号：US18544516

申请日：2023-12-19

Applicant: ASM IP Holding B.V.

Inventor： YongGyu Han ,  Marko Tuominen ,  Shaoren Deng ,  Vincent Vandalon ,  Kranthi Kumar Vaidyula ,  Nadadur Veeraraghavan Srinath

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/027 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01J37/32899 ,  H01L21/0271 ,  H01L21/31116 ,  H01L21/67069 ,  H01J2237/3341

Abstract: The current disclosure relates to methods and assemblies for selectively etching a material from a first surface of a substrate relative to a second surface of the same substrate. The second surface of the substrate is covered by an organic polymer layer and the first surface is etched by a reactive species generated from NF3-containing plasma. The current disclosure further relates to semiconductor structures and devices formed by using the methods or assemblies of the disclosure.

公开(公告)号：US20250043419A1

公开(公告)日：2025-02-06

申请号：US18792680

申请日：2024-08-02

Applicant: ASM IP Holding B.V.

Inventor： Jerome Innocent ,  Andrea Illiberi ,  Leo Lukose ,  YongGyu Han ,  Matthew Surman

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56

Abstract: A method for forming a film comprising hafnium, zirconium, and oxygen, the method comprising forming the film by a cyclical vapor deposition process under the effect of an electric field.

公开(公告)号：US20230098114A1

公开(公告)日：2023-03-30

申请号：US17936607

申请日：2022-09-29

Applicant: ASM IP Holding, B.V.

Inventor： Eva Tois ,  Daniele Chiappe ,  Marko Tuominen ,  Viraj Madhiwala ,  Charles Dezelah ,  YongGyu Han ,  Anirudhan Chandrasekaran ,  Shaoren Deng

IPC: H01L21/02

Abstract: The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.

公开(公告)号：US11414760B2

公开(公告)日：2022-08-16

申请号：US16588807

申请日：2019-09-30

Applicant: ASM IP Holding B.V.

Inventor： KiChul Um ,  JeungHoon Han ,  DooHan Kim ,  YongGyu Han

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: A substrate support unit for thin film deposition on a substrate including a pattern structure and a thin film deposition apparatus including the substrate support unit includes a heater; an RF electrode; a first rod connected to the heater; a second rod connected to the RF electrode; and an RF shield spaced apart from the second rod, disposed to surround the second rod, and extending in an extension direction of the second rod.

公开(公告)号：US20230260754A1

公开(公告)日：2023-08-17

申请号：US18107588

申请日：2023-02-09

Applicant: ASM IP Holding B.V.

Inventor： Doohan Kim ,  YongGyu Han ,  KiChul Um ,  DaeYoun Kim

IPC: H01J37/32 ,  H01G5/16

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01G5/16 ,  H01J2237/024 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/332

Abstract: A substrate processing method capable of performing a stable plasma process includes: supplying a source gas under a first plasma atmosphere using a substrate processing apparatus including a power generation unit, a first reactor, and a matching network between the power generation unit and the first reactor; purging the source gas; supplying a reaction gas under a second plasma atmosphere; and purging the reaction gas, wherein setting a variable capacitor included in the matching network to a first value is performed during the purging of the source gas, and setting the variable capacitor to a second value is performed during the purging of the reaction gas.

公开(公告)号：US20230140367A1

公开(公告)日：2023-05-04

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea llliberi ,  Vincent Vandalon

IPC: C23C16/40 ,  H01J37/32 ,  C23C16/455

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.