公开(公告)号：US20190035810A1

公开(公告)日：2019-01-31

申请号：US16147047

申请日：2018-09-28

Applicant: ASM IP Holding B.V.

Inventor： Seung Ju Chun ,  Yong Min Yoo ,  Jong Wan Choi ,  Young Jae Kim ,  Sun Ja Kim ,  Wan Gyu Lim ,  Yoon Ki Min ,  Hae Jin Lee ,  Tae Hee Yoo

IPC: H01L27/11582 ,  H01L23/522 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/115 ,  H01L23/532 ,  H01L23/528 ,  H01L21/311 ,  H01L21/768 ,  H01L27/11575

Abstract: A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.

公开(公告)号：US11776807B2

公开(公告)日：2023-10-03

申请号：US17451912

申请日：2021-10-22

Applicant: ASM IP HOLDING B.V.

Inventor： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/3065 ,  C23C16/30

CPC classification number: H01L21/02274 ,  C23C16/30 ,  C23C16/40 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4554 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/3065

Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.

公开(公告)号：US10381226B2

公开(公告)日：2019-08-13

申请号：US15662107

申请日：2017-07-27

Applicant: ASM IP Holding B.V.

Inventor： Yong Min Yoo ,  Jong Wan Choi ,  Young Jae Kim ,  Sun Ja Kim ,  Wan Gyu Lim

IPC: H01L21/225 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3105

Abstract: A method of processing a substrate to enable selective doping without a photolithography process is provided. The method includes forming a diffusion barrier on the substrate having a patterned structure using plasma deposition method, removing the diffusion barrier except for part of the diffusion barrier using wet etching, forming a diffusion source layer on the patterned structure and the part of the diffusion barrier, and applying energy to the diffusion source layer.

公开(公告)号：US20180350587A1

公开(公告)日：2018-12-06

申请号：US15971601

申请日：2018-05-04

Applicant: ASM IP Holding B.V.

Inventor： Lingyun Jia ,  Viljami J. Pore ,  Marko Tuominen ,  Sun Ja Kim ,  Oreste Madia ,  Eva Tois ,  Suvi Haukka ,  Toshiya Suzuki

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.

公开(公告)号：US10134757B2

公开(公告)日：2018-11-20

申请号：US15640239

申请日：2017-06-30

Applicant: ASM IP Holding B.V.

Inventor： Seung Ju Chun ,  Yong Min Yoo ,  Jong Wan Choi ,  Young Jae Kim ,  Sun Ja Kim ,  Wan Gyu Lim ,  Yoon Ki Min ,  Hae Jin Lee ,  Tae Hee Yoo

IPC: H01L27/115 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11556

Abstract: A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.

公开(公告)号：US20180130701A1

公开(公告)日：2018-05-10

申请号：US15640239

申请日：2017-06-30

Applicant: ASM IP Holding B.V.

Inventor： Seung Ju Chun ,  Yong Min Yoo ,  Jong Wan Choi ,  Young Jae Kim ,  Sun Ja Kim ,  Wan Gyu Lim ,  Yoon Ki Min ,  Hae Jin Lee ,  Tae Hee Yoo

IPC: H01L21/768 ,  H01L21/311 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L27/11582 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76829 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76885 ,  H01L21/76892 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329 ,  H01L27/115 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11575

Abstract: A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.