公开(公告)号：EP3958052A1

公开(公告)日：2022-02-23

申请号：EP20192002.2

申请日：2020-08-20

Applicant: ASML Netherlands B.V.

Inventor： COTTAAR, Jeroen

IPC: G02F1/35 ,  G03F7/20

Abstract: Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.

公开(公告)号：EP4018263A1

公开(公告)日：2022-06-29

申请号：EP20740656.2

申请日：2020-07-22

Applicant: ASML Netherlands B.V.

Inventor： YAGUBIZADE, Hadi ,  KIM, Min-Seok ,  CUI, Yingchao ,  SLOTBOOM, Daan, Maurits ,  PARK, Jeonghyun ,  COTTAAR, Jeroen

IPC: G03F7/20

公开(公告)号：EP3611567A2

公开(公告)日：2020-02-19

申请号：EP19194215.0

申请日：2019-08-29

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： MEHTA, Nikhil ,  COTTAAR, Jeroen ,  WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  VAN KRAAIJ, Markus Gerardus Martinus Maria ,  CRAMER, Hugo, Augustinus Joseph ,  ZWIER, Olger, Victor

IPC: G03F7/00

Abstract: Disclosed is a patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device comprises target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The target patterning elements and product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that said at least one target has at least one boundary which is neither parallel nor perpendicular with respect to said product structures on said substrate.

公开(公告)号：EP4500277A1

公开(公告)日：2025-02-05

申请号：EP23707737.5

申请日：2023-03-01

Applicant: ASML Netherlands B.V.

Inventor： COTTAAR, Jeroen

IPC: G03F7/20 ,  G03F9/00

公开(公告)号：EP3611567A3

公开(公告)日：2020-05-13

申请号：EP19194215.0

申请日：2019-08-29

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： MEHTA, Nikhil ,  COTTAAR, Jeroen ,  WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  VAN KRAAIJ, Markus Gerardus Martinus Maria ,  CRAMER, Hugo, Augustinus Joseph ,  ZWIER, Olger, Victor

IPC: G03F7/00 ,  G03F7/20 ,  G03F1/42

Abstract: Disclosed is a patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device comprises target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The target patterning elements and product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that said at least one target has at least one boundary which is neither parallel nor perpendicular with respect to said product structures on said substrate.

公开(公告)号：EP3869270A1

公开(公告)日：2021-08-25

申请号：EP20157939.8

申请日：2020-02-18

Applicant: ASML Netherlands B.V.

Inventor： REININK, Johan ,  COTTAAR, Jeroen ,  DONDERS, Sjoerd, Nicolaas, Lambertus ,  VAN DER POST, Sietse, Thijmen

IPC: G03F7/20 ,  G01B11/27 ,  G01N21/956

Abstract: Apparatus and method for measuring one or more parameters of a substrate (300) using source radiation emitted from a radiation source (100) and directed onto the substrate. The apparatus comprises at least one reflecting element (710a) and at least one detector (720, 721). The at least one reflecting element is configured to receive a reflected radiation resulting from reflection of the source radiation from the substrate and further reflect the reflected radiation into a further reflected radiation. The at least one detector is configured for measurement of the further reflected radiation for determination of at least an alignment of the source radiation and/or the substrate

公开(公告)号：EP3848757A1

公开(公告)日：2021-07-14

申请号：EP20151440.3

申请日：2020-01-13

Applicant: ASML Netherlands B.V.

Inventor： YAGUBIZADE, Hadi ,  KIM, Min-Seok ,  CUI, Yingchao ,  SLOTBOOM, Daan Maurits ,  PARK, Jeonghyun ,  COTTAAR, Jeroen

IPC: G03F7/20

Abstract: A method of determining a control setting for a lithographic apparatus. The method comprises obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is obtained based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further comprises determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

公开(公告)号：EP3680714A1

公开(公告)日：2020-07-15

申请号：EP19150960.3

申请日：2019-01-09

Applicant: ASML Netherlands B.V.

Inventor： SLOTBOOM, Daan Maurits ,  HEIJMERIKX, Hermannes Theodorus ,  LOAIZA RIVAS, Javier Augusto ,  COTTAAR, Jeroen

IPC: G03F1/70 ,  G03F7/20

Abstract: According to an aspect of the invention there is provided a method for determining positions of features within a functional area on a patterning device configured for use in a lithographic process, the method comprising: determining positions of the features within the functional area based at least partially on the dependency of a spatial characteristic of a process performed subsequently to the lithographic process on the positions of the features. Optionally the positions of the features within the functional area are determined by rotation of a layout of the features associated with another functional area on the patterning device.

公开(公告)号：EP3358415A1

公开(公告)日：2018-08-08

申请号：EP17155067.6

申请日：2017-02-07

Applicant: ASML Netherlands B.V.

Inventor： QUEENS, Rene, Marinus, Gerardus, Johan ,  HENKE, Wolfgang, Helmut ,  DONKERBROEK, Arend, Johannes ,  COTTAAR, Jeroen

IPC: G03F9/00

CPC classification number: G03F9/7026 ,  G03F9/7034

Abstract: A method of controlling a lithographic apparatus to manufacture a plurality of devices on a substrate, the method comprising:
obtaining a parameter map representing a parameter variation across the substrate by measuring the parameter at a plurality of points on the substrate;
decomposing the parameter map into a plurality of components, including a first parameter map component representing parameter variations associated with the device pattern and one or more further parameter map components representing other parameter variations;
determining a scale factor to correct for errors in measurement of the parameter; and
controlling the lithographic apparatus using the parameter map and scale factor to apply a device pattern at multiple locations across the substrate.