公开(公告)号：EP3848757A1

公开(公告)日：2021-07-14

申请号：EP20151440.3

申请日：2020-01-13

Applicant: ASML Netherlands B.V.

Inventor： YAGUBIZADE, Hadi ,  KIM, Min-Seok ,  CUI, Yingchao ,  SLOTBOOM, Daan Maurits ,  PARK, Jeonghyun ,  COTTAAR, Jeroen

IPC: G03F7/20

Abstract: A method of determining a control setting for a lithographic apparatus. The method comprises obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is obtained based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further comprises determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

公开(公告)号：EP3680714A1

公开(公告)日：2020-07-15

申请号：EP19150960.3

申请日：2019-01-09

Applicant: ASML Netherlands B.V.

Inventor： SLOTBOOM, Daan Maurits ,  HEIJMERIKX, Hermannes Theodorus ,  LOAIZA RIVAS, Javier Augusto ,  COTTAAR, Jeroen

IPC: G03F1/70 ,  G03F7/20

Abstract: According to an aspect of the invention there is provided a method for determining positions of features within a functional area on a patterning device configured for use in a lithographic process, the method comprising: determining positions of the features within the functional area based at least partially on the dependency of a spatial characteristic of a process performed subsequently to the lithographic process on the positions of the features. Optionally the positions of the features within the functional area are determined by rotation of a layout of the features associated with another functional area on the patterning device.