公开(公告)号：WO2021032398A1

公开(公告)日：2021-02-25

申请号：PCT/EP2020/070701

申请日：2020-07-22

Applicant: ASML NETHERLANDS B.V.

Inventor： YAGUBIZADE, Hadi ,  KIM, Min-Seok ,  CUI, Yingchao ,  SLOTBOOM, Daan, Maurits ,  PARK, Jeonghyun ,  COTTAAR, Jeroen

IPC: G03F7/20

Abstract: A method of determining a control setting for a lithographic apparatus. The method comprises obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is obtained based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further comprises determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

公开(公告)号：EP4018263A1

公开(公告)日：2022-06-29

申请号：EP20740656.2

申请日：2020-07-22

Applicant: ASML Netherlands B.V.

Inventor： YAGUBIZADE, Hadi ,  KIM, Min-Seok ,  CUI, Yingchao ,  SLOTBOOM, Daan, Maurits ,  PARK, Jeonghyun ,  COTTAAR, Jeroen

IPC: G03F7/20

公开(公告)号：EP3848757A1

公开(公告)日：2021-07-14

申请号：EP20151440.3

申请日：2020-01-13

Applicant: ASML Netherlands B.V.

Inventor： YAGUBIZADE, Hadi ,  KIM, Min-Seok ,  CUI, Yingchao ,  SLOTBOOM, Daan Maurits ,  PARK, Jeonghyun ,  COTTAAR, Jeroen

IPC: G03F7/20

Abstract: A method of determining a control setting for a lithographic apparatus. The method comprises obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is obtained based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further comprises determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.