公开(公告)号：EP3345053A1

公开(公告)日：2018-07-11

申请号：EP16757252.8

申请日：2016-08-26

Applicant: ASML Netherlands B.V.

Inventor： HOUWELING, Zomer, Silvester ,  CASIMIRI, Eric, Willem, Felix ,  DRUZHININA, Tamara ,  JANSSEN, Paul ,  KUIJKEN, Michael, Alfred, Josephus ,  LEENDERS, Martinus, Hendrikus, Antonius ,  OOSTERHOFF, Sicco ,  PÉTER, Mária ,  VAN DER ZANDE, Willem, Joan ,  VAN ZWOL, Pieter-Jan ,  VERBRUGGE, Beatrijs, Louise, Marie-Joseph, Katrien ,  VERMEULEN, Johannes, Petrus, Martinus, Bernardus ,  VLES, David, Ferdinand ,  VOORTHUIJZEN, Willem-Pieter

IPC: G03F1/62

CPC classification number: G03F1/62 ,  G03F7/70983

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising a planar substrate and at least one membrane layer, wherein the planar substrate comprises an inner region and a border region around the inner region; positioning the stack on a support such that the inner region of the planar substrate is exposed; and selectively removing the inner region of the planar substrate using a non-liquid etchant, such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate.

公开(公告)号：EP3875633A1

公开(公告)日：2021-09-08

申请号：EP20160615.9

申请日：2020-03-03

Applicant: Stichting Nederlandse Wetenschappelijk Onderzoek Instituten ,  Universiteit van Amsterdam ,  Stichting VU ,  ASML Netherlands B.V.

Inventor： KURGANOVA, Evgenia ,  DE VRIES, Gosse, Charles ,  POLYAKOV, Alexey, Olegovich ,  OVERKAMP, Jim, Vincent ,  COENEN, Teis, Johan ,  DRUZHININA, Tamara ,  CASTELLANOS ORTEGA, Sonia ,  LUGIER, Olivier, Christian, Maurice

IPC: C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/48 ,  C23C16/56 ,  C23C14/04 ,  G03F7/20 ,  H01L21/02 ,  H01J37/317 ,  C23C16/46

Abstract: Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a deposition-process material is provided in gaseous form. A layer of the deposition-process material is formed on the substrate by causing condensation or deposition of the gaseous deposition-process material. A selected portion of the layer of deposition-process material is irradiated to modify the deposition-process material in the selected portion.

公开(公告)号：EP3759550A1

公开(公告)日：2021-01-06

申请号：EP19705767.2

申请日：2019-02-21

Applicant: ASML Netherlands B.V.

Inventor： DE JAGER, Pieter, Willem, Herman ,  WUISTER, Sander, Frederik ,  VAN LARE, Marie-Claire ,  MAAS, Ruben, Cornelis ,  POLYAKOV, Alexey, Olegovich ,  DRUZHININA, Tamara ,  VORONINA, Victoria ,  KURGANOVA, Evgenia ,  OVERKAMP, Jim, Vincent ,  KASTRUP, Bernardo ,  VAN KAMPEN, Maarten ,  DOLGOV, Alexandr

IPC: G03F7/004 ,  G03F7/20