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公开(公告)号：US20200218169A1
公开(公告)日：2020-07-09
申请号：US16638552
申请日：2018-08-08
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus VAN HAREN , Leon Paul VAN DIJK , IIya MALAKHOVSKY , Ronald Henricus Johannes OTTEN , Mahdi SADEGHINIA
Abstract: Methods and associated apparatus for reconstructing a free-form geometry of a substrate, the method including: positioning the substrate on a substrate holder configured to retain the substrate under a retaining force that deforms the substrate from its free-form geometry; measuring a height map of the deformed substrate; and reconstructing the free-form geometry of the deformed substrate based on an expected deformation of the substrate by the retaining force and the measured height map.
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12.发明申请公开(公告)号：US20190294059A1
公开(公告)日：2019-09-26
申请号：US16304419
申请日：2017-05-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul VAN DIJK , Victor Emanuel CALADO , Willem Seine Christian ROELOFS , Richard Johannes Franciscus VAN HAREN
IPC: G03F7/20 , G01N21/956 , G01N21/94 , G01N21/95 , G03F1/64
Abstract: A method of determining a pellicle compensation correction which compensates for a distortion of a patterning device resultant from mounting of a pellicle onto the patterning device. The method includes determining a pellicle induced distortion from a first shape associated with the patterning device without the pellicle mounted and a second shape associated with the patterning device with the pellicle mounted, the pellicle induced distortion describing the distortion of the patterning device due to the pellicle being mounted. The determined pellicle induced distortion is then used to calculate the pellicle compensation correction for a lithographic exposure step using the patterning device.
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13.发明申请公开(公告)号：US20190079411A1
公开(公告)日：2019-03-14
申请号：US16076743
申请日：2017-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergun CEKLI , Masashi ISHIBASHI , Leon Paul VAN DIJK , Richard Johannes Franciscus VAN HAREN , Xing Lan LIU , Reiner Maria JUNGBLUT , Cedric Marc AFFENTAUSCHEGG , Ronald Henricus Johannes OTTEN
Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.
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公开(公告)号：US20190041758A1
公开(公告)日：2019-02-07
申请号：US16039073
申请日：2018-07-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul VAN DIJK , Mahdi SADEGHINIA , Richard Johannes Franciscus VAN HAREN , Ilya MALAKHOVSKY , Ronald Henricus Johannes OTTEN
Abstract: A method for determining a mechanical property of a layer applied to a substrate and associated control system for controlling a lithographic process. The method includes obtaining measured out-of-plane deformation of the substrate, the out-of-plane deformation including deformation normal to a substrate plane defined by, or parallel to, a substrate surface. The measured out-of-plane deformation is fitted to a second order polynomial in two coordinates associated with the substrate plane and the mechanical property (e.g. anisotropic Young's moduli) of the layer is determined based on characteristics of the fitted second order polynomial. The mechanical property of the layer can be used to calibrate an in-plane distortion model of the substrate for predicting in-plane distortion based on the measured out-of-plane deformation.
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