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    DETERMINING AN OPTIMAL OPERATIONAL PARAMETER SETTING OF A METROLOGY SYSTEM
    1.
    发明申请
    DETERMINING AN OPTIMAL OPERATIONAL PARAMETER SETTING OF A METROLOGY SYSTEM 审中-公开

    公开(公告)号：US20190250523A1

    公开(公告)日：2019-08-15

    申请号：US16344831

    申请日：2017-10-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Leon Paul VAN DIJK ,  Victor Emanuel CALADO ,  Xing Lan LIU ,  Richard Johannes Franciscus VAN HAREN

    IPC: G03F7/20 ,  G03F9/00

    Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.

    LITHOGRAPHIC METHOD AND LITHOGRAPHIC APPARATUS
    2.
    发明申请
    LITHOGRAPHIC METHOD AND LITHOGRAPHIC APPARATUS 审中-公开

    公开(公告)号：US20180292761A1

    公开(公告)日：2018-10-11

    申请号：US15557802

    申请日：2015-12-10

    Applicant: ASML Netherlands B.V.

    Inventor： Hakki Ergün CEKLI ,  Xing Lan LIU ,  Stefan Cornelis Theodorus VAN DER SANDEN

    IPC: G03F7/20

    Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.

    DETERMINING AN OPTIMAL OPERATIONAL PARAMETER SETTING OF A METROLOGY SYSTEM
    3.
    发明申请
    DETERMINING AN OPTIMAL OPERATIONAL PARAMETER SETTING OF A METROLOGY SYSTEM 有权

    公开(公告)号：US20210018852A1

    公开(公告)日：2021-01-21

    申请号：US17032249

    申请日：2020-09-25

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Leon Paul VAN DIJK ,  Victor Emanuel CALADO ,  Xing Lan LIU ,  Richard Johannes Franciscus VAN HAREN

    IPC: G03F7/20 ,  G03F9/00

    Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.

    METROLOGY USING A PLURALITY OF METROLOGY TARGET MEASUREMENT RECIPES
    6.
    发明申请
    METROLOGY USING A PLURALITY OF METROLOGY TARGET MEASUREMENT RECIPES 有权

    公开(公告)号：US20210208512A1

    公开(公告)日：2021-07-08

    申请号：US16346135

    申请日：2017-11-01

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Victor Emanuel CALADO ,  Youping ZHANG ,  Maurits VAN DER SCHAAR ,  Richard Johannes Franciscus VAN HAREN ,  Xing Lan LIU

    IPC: G03F7/20

    Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.

    Metrology Method and Apparatus, Computer Program and Lithographic System
    10.
    发明申请
    Metrology Method and Apparatus, Computer Program and Lithographic System 有权
    计量方法与仪器，计算机程序和光刻系统

    公开(公告)号：US20160223322A1

    公开(公告)日：2016-08-04

    申请号：US15013340

    申请日：2016-02-02

    Applicant: ASML Netherlands B.V.

    Inventor： Xing Lan LIU ,  Hendrik Jan Hidde Smilde ,  Yue-Lin Peng ,  Hakki Ergün Cekli ,  Josselin Pello ,  Richard Johannes Franciscus Van Haren

    IPC: G01B11/27 ,  G03F7/20

    CPC classification number: G01B11/272 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7007

    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.

    Abstract translation: 公开了一种测量光刻处理参数的方法以及相关联的计算机程序和装置。 该方法包括在衬底上提供多个目标结构，每个靶结构包括在衬底的不同层上的第一结构和第二结构。 用测量辐射测量每个目标结构以获得目标结构中的目标不对称性的测量，所述目标不对称性包括由于第一和第二结构的未对准而产生的覆盖贡献，以及由于至少第一个结构中的结构不对称的结构贡献 结构体。 获得与至少每个目标结构的第一结构中的结构不对称有关的结构不对称特性，结构不对称特性与测量辐射的至少一个所选特征无关。 然后使用目标不对称性和结构不对称特征的测量来确定每个目标结构的目标不对称性的覆盖贡献。

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