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公开(公告)号：US20210048758A1
公开(公告)日：2021-02-18
申请号：US16966536
申请日：2019-02-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus VAN HAREN , Leon Paul VAN DIJK , Orion Jonathan Pierre MOURAILLE , Anne Marie PASTOL
Abstract: Methods and apparatuses for determining a position of an alignment mark applied to a region of a first layer on a substrate using a lithographic process by: obtaining an expected position of the alignment mark; obtaining a geometrical deformation of the region due to a control action correcting the lithographic process; obtaining a translation of the alignment mark due to the geometrical deformation; and determining the position of the alignment mark based on the expected position and the translation.
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公开(公告)号：US20190250523A1
公开(公告)日：2019-08-15
申请号：US16344831
申请日：2017-10-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul VAN DIJK , Victor Emanuel CALADO , Xing Lan LIU , Richard Johannes Franciscus VAN HAREN
Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.
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公开(公告)号：US20240369943A1
公开(公告)日：2024-11-07
申请号：US18576441
申请日：2022-06-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Kedir Mohammed ADAL , Reza SAHRAEIAN , Leon Paul VAN DIJK , Richard Johannes, Franciscus VAN HAREN , Abu, Niyam Md, Mushfiqul HAQUE
IPC: G03F7/00
Abstract: Methods, systems, and apparatus for mapping high dimensional data related to a lithographic apparatus, etch tool, metrology tool or inspection tool to a lower dimensional representation of the data. High dimensional data is obtained related to the apparatus. The high dimensional data has first dimensions N greater than two. A nonlinear parametric model is obtained, which has been trained to map a training set of high dimensional data onto a lower dimensional representation. The lower dimensional representation has second dimensions M, wherein Mis less than N. The model has been trained using a cost function configured to make the mapping preserve local similarities in the training set of high dimensional data. Using the model, the obtained high dimensional data is mapped to the corresponding lower dimensional representation.
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公开(公告)号：US20200310242A1
公开(公告)日：2020-10-01
申请号：US16099452
申请日：2017-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus VAN HAREN , Reiner Maria JUNGBLUT , Leon Paul VAN DIJK , Willem Seine Christian ROELOFS , Wim Tjibbo TEL , Stefan HUNSCHE , Maurits VAN DER SCHAAR
Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
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公开(公告)号：US20220083834A1
公开(公告)日：2022-03-17
申请号：US17423658
申请日：2019-12-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Faegheh HASIBI , Leon Paul VAN DIJK , Maialen LARRANAGA , Alexander YPMA , Richard Johannes Franciscu VAN HAREN
IPC: G06N3/04
Abstract: A method for predicting a property associated with a product unit. The method may include: obtaining a plurality of data sets, wherein each of the plurality of data sets includes data associated with a spatial distribution of a parameter across the product unit; representing each of the plurality of data sets as a multidimensional object; obtaining a convolutional neural network model trained with previously obtained multidimensional objects and properties of previous product units; and applying the convolutional neural network model to the plurality of multidimensional objects representing the plurality of data sets, to predict the property associated with the product unit.
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Patent Agency Ranking
公开(公告)号：US20210165335A1
公开(公告)日：2021-06-03
申请号：US17267974
申请日：2019-07-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul VAN DIJK , Richard Johannes Franciscus VAN HAREN , Subodh SINGH , IIya MALAKHOVSKY , Ronald Henricus Johannes OTTEN , Amandev SINGH
IPC: G03F7/20
Abstract: Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.
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公开(公告)号：US20200050117A1
公开(公告)日：2020-02-13
申请号：US16485499
申请日：2018-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus VAN HAREN , Leon Paul VAN DIJK , Ilya MALAKHOVSKY , Ronald Henricus Johannes OTTEN
Abstract: A method and control system for determining stress in a substrate. The method includes determining a measured position difference between a measured position of at least one first feature and a measured position of at least one second feature which have been applied on a substrate, and determining local stress in the substrate from the measured position difference.
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公开(公告)号：US20190285992A1
公开(公告)日：2019-09-19
申请号：US16463057
申请日：2017-11-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus VAN HAREN , Victor Emanuel CALADO , Leon Paul VAN DIJK , Roy WERKMAN , Everhardus Cornelis MOS , Jochem Sebastiaan WILDENBERG , Marinus JOCHEMSEN , Bijoy RAJASEKHARAN , Erik JENSEN , Adam Jan URBANCZYK
IPC: G03F7/20
Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.
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9.发明公开公开(公告)号：US20230244151A1
公开(公告)日：2023-08-03
申请号：US18129169
申请日：2023-03-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus VAN HAREN , Leon Paul VAN DIJK , Oktay YILDIRIM , Orion Jonathan Pierre MOURAILLE
CPC classification number: G03F7/70675 , G03F1/70
Abstract: A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.
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公开(公告)号：US20210018852A1
公开(公告)日：2021-01-21
申请号：US17032249
申请日：2020-09-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul VAN DIJK , Victor Emanuel CALADO , Xing Lan LIU , Richard Johannes Franciscus VAN HAREN
Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.
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