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    Lithographic Apparatus for Measuring Overlay Error and a Device Manufacturing Method
    17.
    发明申请
    Lithographic Apparatus for Measuring Overlay Error and a Device Manufacturing Method 有权
    用于测量叠加误差的平版印刷设备和器件制造方法

    公开(公告)号：US20160377992A1

    公开(公告)日：2016-12-29

    申请号：US15264152

    申请日：2016-09-13

    Applicant: ASML Netherlands B.V.

    Inventor： Marcus Adrianus VAN DE KERKHOF ,  Leonardus Henricus Marie VERSTAPPEN

    IPC: G03F7/20

    CPC classification number: G03F7/70633 ,  G03F7/705

    Abstract: A lithographic apparatus including an inspection apparatus can measure the overlay error of a target in a scribelane is measured. The overlay error of the required feature in the chip area may differ from this due to, for example, different responses to the exposure process. A model is used to simulate these differences and thus a more accurate measurement of the overlay error of the feature determined.

    Abstract translation: 可以测量包括检查装置的光刻设备可以测量在scribelane中的目标物的重叠误差。 由于例如对曝光处理的不同响应，芯片区域中所需特征的覆盖误差可能与此不同。 使用模型来模拟这些差异，从而更准确地测量所确定的特征的覆盖误差。

    Lithographic Focus and Dose Measurement Using A 2-D Target
    18.
    发明申请
    Lithographic Focus and Dose Measurement Using A 2-D Target 有权
    使用2-D靶的光刻焦点和剂量测量

    公开(公告)号：US20140247434A1

    公开(公告)日：2014-09-04

    申请号：US14273707

    申请日：2014-05-09

    Applicant: ASML Netherlands B.V.

    Inventor： Christian Marinus LEEWIS ,  Hugo Augustinus Joseph CRAMER ,  Marcus Adrianus VAN DE KERKHOF ,  Johannes Anna QUAEDACKERS ,  Christine Corine MATTHEUS

    IPC: G03F7/20 ,  G03F1/38

    CPC classification number: G03F7/70641 ,  G03F1/38 ,  G03F7/706 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70675 ,  G03F7/70683

    Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

    Abstract translation: 为了确定曝光装置是否正在输出正确剂量的辐射，并且其投影系统正确地对准辐射，在掩模上使用测试图案将特定标记物印刷到基底上。 然后通过诸如散射仪的检查装置测量该标记，以确定焦点和剂量以及其它相关性质是否存在错误。 测试图案被配置为使得可以通过测量使用掩模曝光的图案的特性容易地确定聚焦和剂量的变化。 测试图案可以是二维图案，其中物理或几何性质（例如间距）在两个维度的每一个中是不同的。 测试图案也可以是由一维结构阵列组成的一维图案，该结构由至少一个子结构构成，该子结构与焦点和剂量不同地反应并产生暴露图案， 可以确定焦点和剂量。

    Lithographic Apparatus and a Method for Determining a Polarization Property
    19.
    发明申请
    Lithographic Apparatus and a Method for Determining a Polarization Property 有权
    平版印刷设备和确定极化性能的方法

    公开(公告)号：US20130176547A1

    公开(公告)日：2013-07-11

    申请号：US13786400

    申请日：2013-03-05

    Applicant: ASML Netherlands B.V.

    Inventor： Marcus Adrianus VAN DE KERKHOF ,  Wilhelmus Petrus DE BOEIJ ,  Hendrikus Robertus Marie VAN GREEVENBROEK ,  Michel Fransois Hubert KLAASSEN ,  Martijn Gerard Dominique WEHRENS ,  Haico Victor KOK ,  Wilhelmus Jacobus Maria Rooijakkers ,  Tammo UITTERDIJK

    IPC: G03F7/20

    CPC classification number: G03F7/70133 ,  G03F7/70566 ,  G03F7/70591 ,  G03F7/7085

    Abstract: A lithographic apparatus includes an illumination system, a support, a patterning device, a substrate table, a projection system, and a detector. The apparatus further includes a polarization changing element, such as a quarter-wave plate, that is adjustable and a polarization analyzer, such as a linear polarizer. The polarization changing element and the polarization analyzer are arranged in order in the radiation beam path at the level at which a patterning device would be held by the support. By taking intensity measurements for different rotational orientations of the polarization changing element, information on the state of polarization of the radiation at the level of the patterning device can be obtained. Because the polarization analyzer is located before the projection system, the measurements are not affected by the fact that the detector is located after the projection system, such as at the level of the substrate.

    Abstract translation: 光刻设备包括照明系统，支撑件，图案形成装置，衬底台，投影系统和检测器。 该装置还包括可调节的诸如四分之一波片的偏振改变元件和诸如线性偏振器的偏振分析器。 偏振改变元件和偏振分析器在辐射束路径中依次布置在图案形成装置将被支撑件保持的水平处。 通过对偏振变化元件的不同旋转取向进行强度测量，可以获得关于图案形成装置的电平处的辐射的偏振状态的信息。 由于偏振分析仪位于投影系统之前，测量不受检测器位于投影系统之后（例如在基板的水平面）的事实的影响。

    A POSITION MEASUREMENT SYSTEM, A POSITIONING SYSTEM, A LITHOGRAPHIC APPARATUS, AND A DEVICE MANUFACTURING METHOD
    20.
    发明公开
    A POSITION MEASUREMENT SYSTEM, A POSITIONING SYSTEM, A LITHOGRAPHIC APPARATUS, AND A DEVICE MANUFACTURING METHOD 审中-公开

    公开(公告)号：US20240361706A1

    公开(公告)日：2024-10-31

    申请号：US18577515

    申请日：2022-06-30

    Applicant: ASML Netherlands B.V.

    Inventor： Marcus Adrianus VAN DE KERKHOF

    IPC: G03F7/00

    CPC classification number: G03F7/70775 ,  G03F7/70725 ,  G03F7/70758

    Abstract: The invention provides a position measurement system to measure a position of an object in a movement direction relative to a reference, said position measurement system comprising: —a diffraction grating, and —an interferometer, wherein the interferometer is configured to direct a measurement beam to the diffraction grating in a measuring direction that is orthogonal to the movement direction of the object, and wherein the diffraction grating is oriented relative to the interferometer such that the measurement beam is substantially at a Littrow angle of the diffraction grating so that a diffracted beam to be received by the interferometer is substantially parallel to the measuring direction.

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