公开(公告)号：US20220260929A1

公开(公告)日：2022-08-18

申请号：US17628668

申请日：2020-07-06

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Nikhil MEHTA ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ ,  Hugo Augustinus Joseph CRAMER ,  Olger Victor ZWIER ,  Jeroen COTTAAR ,  Patrick WARNAAR

IPC: G03F7/20 ,  G03F1/84 ,  G01N21/956

Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

公开(公告)号：US20210389365A1

公开(公告)日：2021-12-16

申请号：US17460947

申请日：2021-08-30

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Patrick WARNAAR ,  Vasco Tomas TENNER ,  Maurits VAN DER SCHAAR

IPC: G01R31/265

Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.

公开(公告)号：US20210349395A1

公开(公告)日：2021-11-11

申请号：US17379662

申请日：2021-07-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick WARNAAR ,  Patricius Aloysius Jacobus Tinnemans ,  Grzegorz Grzela ,  Everhardus Cornelis Mos ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Bart Peter Bert Segers ,  Frank Staals

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US20210003924A1

公开(公告)日：2021-01-07

申请号：US17022910

申请日：2020-09-16

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Arie Jeffrey DEN BOEF ,  Armand Eugene Albert KOOLEN ,  Nitesh PANDEY ,  Vasco Tomas TENNER ,  Willem Marie Julia Marcel COENE ,  Patrick WARNAAR

IPC: G03F7/20 ,  G01B11/06 ,  G01B11/02 ,  G01N21/47 ,  G01N21/95 ,  G03F9/00

Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

公开(公告)号：US20160179019A1

公开(公告)日：2016-06-23

申请号：US15057651

申请日：2016-03-01

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Kaustuve BHATTACHARYYA ,  Hendrik Jan Hidde SMILDE ,  Michael KUBIS

IPC: G03F9/00

CPC classification number: G03F9/7042 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  H01L23/544 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

公开(公告)号：US20250036031A1

公开(公告)日：2025-01-30

申请号：US18716007

申请日：2022-11-17

Applicant: ASML Netherlands B.V.

Inventor： Aniruddha Ramakrishna SONDE ,  Mahesh Upendra AJGAONKAR ,  Krishanu SHOME ,  Simon Reinald HUISMAN ,  Sebastianus Adrianus GOORDEN ,  Franciscus Godefridus Casper BIJNEN ,  Patrick WARNAAR ,  Sergei SOKOLOV

IPC: G03F7/00 ,  G01B11/27

Abstract: Some embodiments of this disclosure can improve measurement of target mark asymmetry in metrology apparatuses for improving accuracy in measurements performed in conjunction with lithographic processes. For example, a metrology system can include a projection system configured to receive a plurality of diffraction orders diffracted from a target on a substrate. The metrology system can further include a detector array and a waveguide device configured to transmit the plurality of diffraction orders between the projection system and the detector array. The detector array can be configured to detect each of the plurality of diffraction orders spatially separate from other ones of the plurality of diffraction orders.

公开(公告)号：US20230062585A1

公开(公告)日：2023-03-02

申请号：US17856213

申请日：2022-07-01

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Arie Jeffrey DEN BOEF ,  Armand Eugene Albert KOOLEN ,  Nitesh PANDEY ,  Vasco Tomas TENNER ,  Willem Marie Julia Marcel COENE ,  Patrick WARNAAR

IPC: G03F7/20 ,  G01B11/06 ,  G01B11/02 ,  G01N21/47 ,  G01N21/95 ,  G03F9/00

Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

公开(公告)号：US20210149312A1

公开(公告)日：2021-05-20

申请号：US16644206

申请日：2018-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Mark John MASLOW ,  Koenraad VAN INGEN SCHENAU ,  Patrick WARNAAR ,  Abraham SLACHTER ,  Roy ANUNCIADO ,  Simon Hendrik Celine VAN GORP ,  Frank STAALS ,  Marinus JOCHEMSEN

IPC: G03F7/20 ,  H01L21/66 ,  G06T7/00

Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

公开(公告)号：US20200249576A1

公开(公告)日：2020-08-06

申请号：US16635584

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick WARNAAR ,  Patricius Aloysius Jacobus TINNEMANS ,  Grzegorz GRZELA ,  Everhardus Cornelis MOS ,  Wim Tjibbo TEL ,  Marinus JOCHEMSEN ,  Bart Peter Bert SEGERS ,  Frank STAALS

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US20180136570A1

公开(公告)日：2018-05-17

申请号：US15869661

申请日：2018-01-12

Applicant: ASML Netherlands B.V.

Inventor： Si-Han ZENG ,  Yue-Lin PENG ,  Jen-Yu FANG ,  Arie Jeffrey DEN BOEF ,  Alexander STRAAIJER ,  Ching-Yi HUNG ,  Patrick WARNAAR

IPC: G03F7/20 ,  G01B11/27 ,  G01B11/24

CPC classification number: G03F7/70633 ,  G01B11/24 ,  G01B11/272

Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.