公开(公告)号：US20190011842A1

公开(公告)日：2019-01-10

申请号：US16079404

申请日：2017-02-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis MOS ,  Jochem Sebastiaan WILDENBERG ,  Roy WERKMAN ,  Erik Johannes Maria WALLERBOS

IPC: G03F7/20

Abstract: A method of characterizing distortions in a lithographic process, and associated apparatuses. The method includes obtaining measurement data corresponding to a plurality of measurement locations on a substrate, the measurement data comprising measurements performed on a plurality of substrates, and comprising one or more measurements performed on one or more of the substrates for each of the measurement locations. For each of the measurement locations, a first quality value representing a quality metric and a noise value representing a noise metric is determined from the measurements performed at that measurement location. A plurality of distortion parameters is determined, each distortion parameter configured to characterize a systematic distortion in the quality metric and a statistical significance of the distortion parameters from the first quality value and from the noise value is determined. Systematic distortion is parameterized from the distortion parameters determined to be statistically significant.

公开(公告)号：US20170160073A1

公开(公告)日：2017-06-08

申请号：US15432684

申请日：2017-02-14

Applicant: ASML Netherlands B.V.

Inventor： Wouter Lodewijk ELINGS ,  Franciscus Bernardus Maria VAN BILSEN ,  Christianus Gerardus Maria DE MOL ,  Everhardus Cornelis MOS ,  Hoite Pieter Theodoor TOLSMA ,  Peter TEN BERGE ,  Paul Jacques VAN WIJNEN ,  Leonardus Henricus Marie VERSTAPPEN ,  Gerald DICKER ,  Reiner Maria JUNGBLUT ,  Li CHUNG-HSUN

IPC: G01B11/00 ,  G03F7/20 ,  G01B11/26

CPC classification number: G01B11/002 ,  G01B11/02 ,  G01B11/14 ,  G01B11/26 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633 ,  G05B19/41875 ,  G05B2219/37224 ,  H01L22/20 ,  Y02P90/20 ,  Y02P90/22

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.

公开(公告)号：US20200026201A1

公开(公告)日：2020-01-23

申请号：US16495416

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc HAUPTMANN ,  Everhardus Cornelis MOS ,  Weitian KOU ,  Alexander YPMA ,  Michiel KUPERS ,  Hyunwoo YU ,  Min-Sub HAN

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates, As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

公开(公告)号：US20190317412A1

公开(公告)日：2019-10-17

申请号：US16343168

申请日：2017-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis MOS ,  Jochem Sebastiaan WILDENBERG ,  Erik Johannes Maria WALLERBOS ,  Maurits VAN DER SCHAAR ,  Frank STAALS ,  Franciscus Hendricus Arnoldus ELICH

IPC: G03F7/20

Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

公开(公告)号：US20190311921A1

公开(公告)日：2019-10-10

申请号：US16340702

申请日：2017-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis MOS ,  Jochem Sebastiaan WILDENBERG

IPC: H01L21/67 ,  G03F7/20 ,  H01L21/677 ,  H01L21/687 ,  H01L21/68

Abstract: A substrate processing apparatus includes a substrate loading device configured to load a substrate in a predetermined orientation relative to a grid, having a X-axis and an orthogonal Y-axis, associated with a layout of fields on the substrate; and corrective elements configured to enable local correction of a characteristic of a process performed on a substrate, wherein the corrective elements are arranged along at least one axis having a direction other than parallel to the X-axis or the Y-axis of the grid.

公开(公告)号：US20140089870A1

公开(公告)日：2014-03-27

申请号：US13963947

申请日：2013-08-09

Applicant: ASML Netherlands B.V.

Inventor： Everhardus Cornelis MOS ,  Hubertus Johannes Gertrudus Simons ,  Peter Ten Berge ,  Nicole Schoumans ,  Michael Kubis ,  Paul Cornelis Hubertus Aben

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F7/70458 ,  G03F7/70525 ,  G03F7/70633

Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.

Abstract translation: 一种计算光刻工具的处理校正的方法及相关装置。 该方法包括测量使用光刻工具预先暴露的衬底上的工艺缺陷数据; 将过程签名模型拟合到所测量的过程缺陷数据，以获得用于光刻工具的过程签名的模型; 并使用过程签名模型来计算光刻工具的过程校正。

公开(公告)号：US20240192610A1

公开(公告)日：2024-06-13

申请号：US18437564

申请日：2024-02-09

Applicant: ASML Netherlands B.V.

Inventor： Gijs TEN HAAF ,  Everhardus Cornelis MOS ,  Hans Erik KATTOUW ,  Ralph BRINKHOF

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70633

Abstract: Disclosed is a method for determining a process correction for at least a first process of a lithographic process, comprising at least the first process performed on at least a first substrate using at least a first apparatus and a second process performed on at least said first substrate using at least a second apparatus, where a correction actuation capability of the first apparatus differs from the second apparatus, comprising: obtaining metrology data relating to said first substrate; modeling said metrology data using a first model, the model being related to said first apparatus; and controlling said first process based on the modeled metrology data; the modeling step and/or an additional processing step comprises distributing a penalty in a performance parameter across said first process and said second process such that the distributed penalties in the performance parameter are within their respective specifications of the performance parameter.

公开(公告)号：US20240118629A1

公开(公告)日：2024-04-11

申请号：US17766585

申请日：2020-10-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Aliasghar KEYVANI JANBAHAN ,  Frans Reinier SPIERING ,  Jochem Sebastiaan WILDENBERG ,  Everhardus Cornelis MOS

IPC: G03F7/00

CPC classification number: G03F7/706839 ,  G03F7/706837 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641

Abstract: A method of processing measurement data relating to a substrate processed by a manufacturing process. The method includes obtaining measurement data relating to a performance parameter for at least a portion of the substrate; and fitting the measurement data to a model by minimizing a complexity metric applied to fitting parameters of the model while not allowing the deviation between the measurement data and the fitted model to exceed a threshold value.

公开(公告)号：US20210191278A1

公开(公告)日：2021-06-24

申请号：US17197167

申请日：2021-03-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Bart Peter Bert SEGERS ,  Everhardus Cornelis MOS ,  Emil Peter SCHMITT-WEAVER ,  Yichen ZHANG ,  Petrus Gerardus VAN RHEE ,  Xing Lan LIU ,  Maria KILITZIRAKI ,  Reiner Maria JUNGBLUT ,  Hyunwoo YU

IPC: G03F7/20 ,  G06N3/02

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US20200249576A1

公开(公告)日：2020-08-06

申请号：US16635584

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick WARNAAR ,  Patricius Aloysius Jacobus TINNEMANS ,  Grzegorz GRZELA ,  Everhardus Cornelis MOS ,  Wim Tjibbo TEL ,  Marinus JOCHEMSEN ,  Bart Peter Bert SEGERS ,  Frank STAALS

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.