公开(公告)号：US20200371441A1

公开(公告)日：2020-11-26

申请号：US16959736

申请日：2018-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Yichen ZHANG ,  Sarathi ROY

IPC: G03F7/20 ,  G06K9/62 ,  G06F17/18

Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.

公开(公告)号：US20200233315A1

公开(公告)日：2020-07-23

申请号：US16486859

申请日：2018-02-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Jelle NIJE ,  Alexander YPMA ,  Dimitra GKOROU ,  Georgios TSIROGIANNIS ,  Robert Jan VAN WIJK ,  Tzu-Chao CHEN ,  Frans Reinier SPIERING ,  Sarathi ROY ,  Cédric Désiré GROUWSTRA

IPC: G03F7/20

Abstract: A method of optimizing an apparatus for multi-stage processing of product units such as wafers, the method includes: receiving object data representing one or more parameters measured across the product units and associated with different stages of processing of the product units; and determining fingerprints of variation of the object data across the product units, the fingerprints being associated with different respective stages of processing of the product units. The fingerprints may be determined by decomposing the object data into components using principal component analysis for each different respective stage; analyzing commonality of the fingerprints through the different stages to produce commonality results; and optimizing an apparatus for processing product units based on the commonality results.

公开(公告)号：US20240345569A1

公开(公告)日：2024-10-17

申请号：US18674537

申请日：2024-05-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Sarathi ROY ,  Edo Maria HULSEBOS ,  Roy WERKMAN ,  Junru RUAN

IPC: G05B19/418 ,  G03F7/00 ,  G05B13/02 ,  G06N3/044

CPC classification number: G05B19/41875 ,  G03F7/70508 ,  G03F7/70525 ,  G05B13/027 ,  G05B19/41885 ,  G06N3/044 ,  G05B2219/33025 ,  G05B2219/45028 ,  G05B2219/45031

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

公开(公告)号：US20240310738A1

公开(公告)日：2024-09-19

申请号：US18571118

申请日：2022-06-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Sarathi ROY

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/706837 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/706841 ,  G03F9/7073

Abstract: A method and associated computer program and apparatuses for determining a correction for at least one control parameter, the at least one control parameter for controlling a semiconductor manufacturing process so as to manufacture semiconductor devices on a substrate. The method includes: obtaining metrology data relating to the semiconductor manufacturing process or at least part thereof; obtaining associated data relating to the semiconductor manufacturing process or at least part thereof, the associated data providing information for interpreting the metrology data; and determining the correction based on the metrology data and the associated data, wherein the determining is such that the determined correction depends on a degree to which a trend and/or event in the metrology data should be corrected based on the interpretation of the metrology data.

公开(公告)号：US20240184254A1

公开(公告)日：2024-06-06

申请号：US18287613

申请日：2022-04-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Sarathi ROY ,  Daan MANNEKE

IPC: G05B13/02 ,  G03F7/00

CPC classification number: G05B13/027 ,  G03F7/705 ,  G03F7/70525

Abstract: A method for configuring a semiconductor manufacturing process, the method comprising: obtaining a plurality of first values of a first parameter based on successive measurements associated with a first operation of a process step in the semiconductor manufacturing process; using a causal convolutional neural network to determine a predicted value of a second parameter based on the first values; and using the predicted value of the second parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

公开(公告)号：US20230176490A1

公开(公告)日：2023-06-08

申请号：US17922925

申请日：2021-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Sarathi ROY ,  Wolfgang Helmut HENKE ,  Peter TEN BERGE

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/7065 ,  G03F9/7003

Abstract: A method and associated apparatuses for optimizing a sampling scheme which defines sampling locations on a bonded substrate, having undergone a wafer to wafer bonding process. The method includes determining a sampling scheme for a metrology process and optimizing the sampling scheme with respect to a singularity defined by a large overlay error and/or grid deformation at a central location on the bonded substrate to obtain a modified sampling scheme.

公开(公告)号：US20210333785A1

公开(公告)日：2021-10-28

申请号：US17367901

申请日：2021-07-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Sarathi ROY ,  Edo Maria HULSEBOS ,  Roy WERKMAN ,  Junru RUAN

IPC: G05B19/418 ,  G03F7/20 ,  G05B13/02 ,  G06N3/04

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.