-
公开(公告)号：US20170160073A1
公开(公告)日：2017-06-08
申请号：US15432684
申请日：2017-02-14
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk ELINGS , Franciscus Bernardus Maria VAN BILSEN , Christianus Gerardus Maria DE MOL , Everhardus Cornelis MOS , Hoite Pieter Theodoor TOLSMA , Peter TEN BERGE , Paul Jacques VAN WIJNEN , Leonardus Henricus Marie VERSTAPPEN , Gerald DICKER , Reiner Maria JUNGBLUT , Li CHUNG-HSUN
CPC classification number: G01B11/002 , G01B11/02 , G01B11/14 , G01B11/26 , G01N21/9501 , G01N21/956 , G01N21/95607 , G03F7/70508 , G03F7/70625 , G03F7/70633 , G05B19/41875 , G05B2219/37224 , H01L22/20 , Y02P90/20 , Y02P90/22
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
-
公开(公告)号：US20220027437A1
公开(公告)日：2022-01-27
申请号：US17496555
申请日：2021-10-07
Applicant: ASML Netherlands B.V.
Inventor： Everhardus Cornelis MOS , Velislava IGNATOVA , Erik JENSEN , Michael KUBIS , Hubertus Johannes Gertrudus SIMONS , Peter TEN BERGE , Erik Johannes Maria WALLERBOS , Jochem Sebastiaan WILDENBERG
Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.
-
公开(公告)号：US20200319118A1
公开(公告)日：2020-10-08
申请号：US16905629
申请日：2020-06-18
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk ELINGS , Franciscus Bernardus Maria VAN BILSEN , Christianus Gerardus Maria DE MOL , Everhardus Cornelis MOS , Hoite Pieter Theodoor TOLSMA , Peter TEN BERGE , Paul Jacques VAN WIJNEN , Leonard us Henricus Marie VERSTAPPEN , Gerald DICKER , Reiner Maria JUNGBLUT , Chung-Hsun LI
IPC: G01N21/95 , G01B11/14 , G01B11/02 , G01N21/956 , G03F7/20 , H01L21/66 , G05B19/418 , G01B11/00 , G01B11/26
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.
-
公开(公告)号：US20180322237A1
公开(公告)日：2018-11-08
申请号：US15769539
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter TEN BERGE , Everhardus Corneilis MOS , Richard Johannes Franciscus VAN HAREN , Peter Hanzen WARDENIER , Erik JENSEN
Abstract: A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.
-
公开(公告)号：US20240045340A1
公开(公告)日：2024-02-08
申请号：US18242842
申请日：2023-09-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter TEN BERGE , Steven Erik STEEN , Pieter Gerardus Jacobus SMORENBERG , Khalid ELBATTAY
IPC: G03F7/00
CPC classification number: G03F7/70525
Abstract: A method for controlling a process of manufacturing semiconductor devices, the method including: obtaining a first control grid associated with a first lithographic apparatus used for a first patterning process for patterning a first substrate; obtaining a second control grid associated with a second lithographic apparatus used for a second patterning process for patterning a second substrate; based on the first control grid and second control grid, determining a common control grid definition for a bonding step for bonding the first substrate and second substrate to obtain a bonded substrate; obtaining bonded substrate metrology data including data relating to metrology performed on the bonded substrate; and determining a correction for performance of the bonding step based on the bonded substrate metrology data, the determining a correction including determining a co-optimized correction for the bonding step and for the first patterning process and/or second patterning process.
-
Patent Agency Ranking
公开(公告)号：US20210325788A1
公开(公告)日：2021-10-21
申请号：US17363057
申请日：2021-06-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Alexander YPMA , Cyrus Emil TABERY , Simon Hendrik Celine VAN GORP , Chenxi LIN , Dag SONNTAG , Hakki Ergün CEKLI , Ruben ALVAREZ SANCHEZ , Shih-Chin LIU , Simon Philip Spencer HASTINGS , Boris MENCHTCHIKOV , Christiaan Theodoor DE RUITER , Peter TEN BERGE , Michael James LERCEL , Wei DUAN , Pierre-Yves Jerome Yvan GUITTET
IPC: G03F7/20
Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.
-
公开(公告)号：US20180314168A1
公开(公告)日：2018-11-01
申请号：US15769339
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus VAN HAREN , Everhardus Cornelis MOS , Peter TEN BERGE , Peter Hanzen WARDENIER , Erik JENSEN , Hakki Ergün CEKLI
IPC: G03F7/20 , G05B19/418
CPC classification number: G03F7/70625 , G03F7/705
Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.
-
公开(公告)号：US20180067900A1
公开(公告)日：2018-03-08
申请号：US15558186
申请日：2016-03-25
Applicant: ASML Netherlands B.V.
Inventor： Everhardus Cornelis MOS , Velislava IGNATOVA , Erik JENSEN , Michael KUBIS , Hubertus Johannes Gertrudus SIMONS , Peter TEN BERGE , Erik Johannes Maria WALLERBOS , Jochem Sebastiaan WILDENBERG
CPC classification number: G06F17/18 , G03F7/705 , G03F7/70508 , G03F7/70625 , G03F7/70633 , G03F9/7003 , G06F17/5009 , H01L22/12 , H01L22/20
Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.
-
公开(公告)号：US20230176490A1
公开(公告)日：2023-06-08
申请号：US17922925
申请日：2021-04-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Sarathi ROY , Wolfgang Helmut HENKE , Peter TEN BERGE
CPC classification number: G03F7/70633 , G03F7/7065 , G03F9/7003
Abstract: A method and associated apparatuses for optimizing a sampling scheme which defines sampling locations on a bonded substrate, having undergone a wafer to wafer bonding process. The method includes determining a sampling scheme for a metrology process and optimizing the sampling scheme with respect to a singularity defined by a large overlay error and/or grid deformation at a central location on the bonded substrate to obtain a modified sampling scheme.
-
公开(公告)号：US20190258178A1
公开(公告)日：2019-08-22
申请号：US16344034
申请日：2017-09-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter TEN BERGE , Christiaan Theodoor DE RUITER
IPC: G03F7/20
Abstract: A method, and associated system, for determining an optimized set of measurement locations for measurement of a parameter related to a structure applied to a substrate by a semiconductor manufacturing process. The method includes determining a first set of parameter values from a first set of measurements of first structures across a first plurality of locations, for example from target measurements and determining a second set of parameter values from a second set of measurements of second structures across a second plurality of locations, for example using an SEM or e-beam tool on product structures. A correlation is determined between the first set of parameter values and the second set of parameter values and used to determine the optimized set of measurement locations.
-
-
-
-
-
-
-
-
-
Search Results
14
records
(took 0.031 seconds)
