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公开(公告)号：US20240377756A1
公开(公告)日：2024-11-14
申请号：US18749556
申请日：2024-06-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Yichen ZHANG , Sarathi ROY
Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.
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公开(公告)号：US20230259042A1
公开(公告)日：2023-08-17
申请号：US18012398
申请日：2021-05-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Sarathi ROY
CPC classification number: G03F7/706851 , G03F7/70633 , G03F7/70666 , G03F7/706839 , G03F9/7092 , G03F9/7046 , G03F9/7011 , G01B11/27
Abstract: A method to determine a performance indicator indicative of alignment performance of a processed substrate. The method includes obtaining measurement data including a plurality of measured position values of alignment marks on the substrate and calculating a positional deviation between each measured position value and a respective expected position value. These positional deviations are used to determine a directional derivative between the alignment marks, and the directional derivatives are used to determine at least one directional derivative performance indicator.
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公开(公告)号：US20220091514A1
公开(公告)日：2022-03-24
申请号：US17424991
申请日：2019-12-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Roy WERKMAN , David Frans Simon DECKERS , Bijoy RAJASEKHARAN , Ignacio Salvador VAZQUEZ RODARTE , Sarathi ROY
Abstract: A method of determining a control parameter for a lithographic process is disclosed, the method includes: defining a substrate model for representing a process parameter fingerprint across a substrate, the substrate model being defined as a combination of basis functions including at least one basis function suitable for representing variation of the process parameter fingerprint between substrates and/or batches of substrates; receiving measurements of the process parameter across at least one substrate; calculating substrate model parameters using the measurements and the basis functions; and determining the control parameter based on the substrate model parameters and the similarity of the at least one basis function to a process parameter fingerprint variation between substrates and/or batches of substrates.
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公开(公告)号：US20210255547A1
公开(公告)日：2021-08-19
申请号：US16973395
申请日：2019-05-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Jeroen Van Dongen , Wim Tjibbo TEL , Sarathi ROY , Yichen ZHANG , Andrea CAVALLI , Bart Laurens SJENITZER , Simon Philip Spencer HASTINGS
IPC: G03F7/20
Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.
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公开(公告)号：US20220365446A1
公开(公告)日：2022-11-17
申请号：US17874582
申请日：2022-07-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Manouk RIJPSTRA , Cornelis Johannes Henricus LAMBREGTS , Wim Tjibbo TEL , Sarathi ROY , Cédric Désiré GROUWSTRA , Chi-Fei NIEN , Weitian KOU , Chang-Wei CHEN , Pieter Gerardus Jacobus SMORENBERG
IPC: G03F7/20
Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.
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Patent Agency Ranking
公开(公告)号：US20220004108A1
公开(公告)日：2022-01-06
申请号：US17479078
申请日：2021-09-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Jelle NIJE , Alexander YPMA , Dimitra GKOROU , Georgios TSIROGIANNIS , Robert Jan VAN WIJK , Tzu-Chao CHEN , Frans Reinier SPIERING , Sarathi ROY , Cédric Désiré GROUWSTRA
IPC: G03F7/20
Abstract: A method of optimizing an apparatus for multi-stage processing of product units such as wafers, the method includes: receiving object data representing one or more parameters measured across the product units and associated with different stages of processing of the product units; and determining fingerprints of variation of the object data across the product units, the fingerprints being associated with different respective stages of processing of the product units. The fingerprints may be determined by decomposing the object data into components using principal component analysis for each different respective stage; analyzing commonality of the fingerprints through the different stages to produce commonality results; and optimizing an apparatus for processing product units based on the commonality results.
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公开(公告)号：US20210165399A1
公开(公告)日：2021-06-03
申请号：US17174159
申请日：2021-02-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Sarathi ROY , Edo Maria HULSEBOS , Roy WERKMAN , Junru RUAN
IPC: G05B19/418 , G06N3/04 , G03F7/20 , G05B13/02
Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.
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公开(公告)号：US20190212660A1
公开(公告)日：2019-07-11
申请号：US16331547
申请日：2017-08-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitish KUMAR , Adrianus Johannes Hendrikus SCHELLEKENS , Sietse Thijmen VAN DER POST , Ferry ZIJP , Willem Maria Julia Marcel COENE , Peter Danny VAN VOORST , Duygu AKBULUT , Sarathi ROY
IPC: G03F7/20
CPC classification number: G03F7/70191 , G03F7/70341 , G03F7/70516 , G03F7/7085 , G03F7/70916 , G03F7/70941
Abstract: An optical system delivers illuminating radiation and collects radiation after interaction with a target structure on a substrate. A measurement intensity profile is used to calculate a measurement of the property of the structure. The optical system may include a solid immersion lens. In a method, the optical system is controlled to obtain a first intensity profile using a first illumination profile and a second intensity profile using a second illumination profile. The profiles are used to derive a correction for mitigating the effect of, e.g., ghost reflections. Using, e.g., half-moon illumination profiles in different orientations, the method can measure ghost reflections even where a solid immersion lens would cause total internal reflection. The optical system may include a contaminant detection system to control a movement based on received scattered detection radiation. The optical system may include an optical component having a dielectric coating to enhance evanescent wave interaction.
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公开(公告)号：US20220334503A1
公开(公告)日：2022-10-20
申请号：US17640880
申请日：2020-08-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Yingchao CUI , Hadi YAGUBIZADE , Xiuhong WEI , Daan Maurits SLOTBOOM , Jeonghyun PARK , Sarathi ROY , Yichen ZHANG , Mohammad Reza KAMALI , Sang Uk KIM
IPC: G03F7/20
Abstract: A method for determining lithographic matching performance includes obtaining first monitoring data from recurrent monitoring for stability control for an available EUV scanner. For a DUV scanner, second monitoring data is similarly obtained from recurrent monitoring for stability control. The EUV first monitoring data are in a first layout. The DUV second monitoring data are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing the first and/or second monitoring data into a common layout to allow comparison of the first and second monitoring data.
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公开(公告)号：US20210080837A1
公开(公告)日：2021-03-18
申请号：US16954384
申请日：2018-11-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Manouk RIJPSTRA , Cornelis Johannes Henricus LAMBREGTS , Wim Tjibbo TEL , Sarathi ROY , Cédric Désiré GROUWSTRA , Chi-Fei NIEN , Weitian KOU , Chang-Wei CHEN , Pieter Gerardus Jacobus SMORENBERG
IPC: G03F7/20 , G05B19/404
Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.
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