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公开(公告)号:US20180076112A1
公开(公告)日:2018-03-15
申请号:US15263632
申请日:2016-09-13
Applicant: Apple Inc.
Inventor: Sanjay Dabral
IPC: H01L23/373 , H01L23/538 , H01L23/00
Abstract: In an embodiment, an interposer includes multiple integrated circuits coupled thereto. The integrated circuits may include processors and non-processor functionality that may have previously been integrated with the processors on an SOC. By separating the functionality into multiple integrated circuits, the integrated circuits may be arranged on the interposer to spread out the potentially high power ICs and lower power ICs, interleaving them. In other embodiments, instances of the integrated circuits (e.g. processors) from different manufacturing process conditions may be selected to allow a mix of high performance, high power density integrated circuits and lower performance, low power density integrated circuits. In an embodiment, a phase change material may be in contact with the integrated circuits, providing a local reservoir to absorb heat. In an embodiment, a battery or display components may increase thermal mass and allow longer optimal performance state operation.
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公开(公告)号:US09766692B2
公开(公告)日:2017-09-19
申请号:US14729335
申请日:2015-06-03
Applicant: Apple Inc.
Inventor: Sanjay Dabral , R. Stephen Polzin
CPC classification number: G06F1/3296 , G06F1/3253 , G06F1/3287 , G06F13/4221 , G06F13/4282 , G06F2213/0024 , Y02D10/151 , Y02D10/171 , Y02D10/172 , Y02D50/20
Abstract: An integrated circuit (IC) implements an industry standard-defined peripheral interconnect to connect to another integrated circuit or component in a system. The industry standard specification includes a software interface that is well-defined and implemented by various software in the system, and thus is desirable to retain. However, the physical interconnect in the systems employing the integrated circuit may be short, and thus the elaborate physical layer definition may consume more integrated circuit area and power than is otherwise desirable in the IC. The IC may implement a simpler and more power-efficient physical layer, reducing both power consumption and semiconductor substrate area consumption, in some embodiments.
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公开(公告)号:US09679891B2
公开(公告)日:2017-06-13
申请号:US14220293
申请日:2014-03-20
Applicant: Apple Inc.
Inventor: Sanjay Dabral , Xiaofeng Fan , Geertjan Joordens
CPC classification number: H01L27/0285 , H02H3/20 , H02H3/22 , H02H9/046
Abstract: ESD protection circuitry is disclosed. In one embodiment, an integrated circuit includes first and second sensor circuits. The first sensor circuit has a first resistive-capacitive (RC) time constant, while the second sensor circuit has a second RC time constant. The RC time constant of the first sensor circuit is at least one order of magnitude greater than that of the second sensor circuit. A first clamp transistor is coupled to and configured to be activated by the first sensor circuit responsive to the latter detecting an ESD event. A second clamp transistor is coupled to and configured to be activated by the second sensor circuit responsive to the latter detecting the ESD event.
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公开(公告)号:US20150380397A1
公开(公告)日:2015-12-31
申请号:US14501773
申请日:2014-09-30
Applicant: Apple Inc.
Inventor: Sanjay Dabral , Xiaofeng Fan
IPC: H01L27/02
CPC classification number: H01L27/0266 , H01L27/0255
Abstract: Various embodiments of ESD protection circuits and methods for operating the same are disclosed. In one embodiment, one or more driver circuits are protected by a first ESD protection circuit configured to activate and discharge current responsive to an ESD event. The driver circuit may include a pull-up transistor and a pull-down transistor each coupled to drive an output node. A second ESD protection circuit may be associated with and dedicated to the pull-up transistor in the driver circuit.
Abstract translation: 公开了ESD保护电路的各种实施例及其操作方法。 在一个实施例中,一个或多个驱动器电路由被配置为响应于ESD事件激活和放电电流的第一ESD保护电路来保护。 驱动器电路可以包括每个耦合以驱动输出节点的上拉晶体管和下拉晶体管。 第二ESD保护电路可以与驱动器电路中的上拉晶体管相关联并且专用于上拉晶体管。
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公开(公告)号:US20150255142A1
公开(公告)日:2015-09-10
申请号:US14196793
申请日:2014-03-04
Applicant: Apple Inc.
Inventor: Sanjay Dabral
IPC: G11C11/4074 , H01L25/065 , H01L23/64 , H01L23/522 , H01L27/108 , H01L49/02
CPC classification number: G11C11/4074 , G11C5/147 , G11C7/02 , G11C14/0018 , G11C29/021 , H01L23/49822 , H01L23/5223 , H01L23/5227 , H01L23/642 , H01L23/645 , H01L24/13 , H01L24/16 , H01L24/48 , H01L25/0657 , H01L25/18 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/48227 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/14 , H01L2924/1427 , H01L2924/1431 , H01L2924/1432 , H01L2924/1434 , H01L2924/1436 , H01L2924/19041 , H01L2924/19042 , H01L2924/19103 , H01L2924/19104 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: One or more integrated circuits including at least one integrated circuit that is fabricated in a DRAM fabrication process. Capacitors in the DRAM-fabricated integrated circuit can be used for decoupling for logic components of the integrated circuits, and may be used for fine-grain on-chip PMUs. Embedded DRAM memories can be used instead of SRAM memories, with increased density and reduced leakage. More compact systems can be implemented using the integrated circuits.
Abstract translation: 一个或多个集成电路,包括在DRAM制造工艺中制造的至少一个集成电路。 DRAM制造的集成电路中的电容器可以用于集成电路的逻辑部件的去耦,并且可以用于细粒度片上PMU。 可以使用嵌入式DRAM存储器来代替SRAM存储器,具有增加的密度和减少的泄漏。 使用集成电路可以实现更紧凑的系统。
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公开(公告)号:US20250157940A1
公开(公告)日:2025-05-15
申请号:US19021018
申请日:2025-01-14
Applicant: Apple Inc.
Inventor: Sanjay Dabral , Jun Zhai
IPC: H01L23/538 , H01L21/66 , H01L23/00 , H01L23/488 , H01L23/498 , H01L23/522 , H01L23/528 , H01L23/58 , H01L25/18
Abstract: Stitched die structures, and methods for interconnecting die are described. In an embodiment, a stitched die structure includes a semiconductor substrate that includes a first die area of a first die and a second die area of a second die separate from the first die area. A back-end-of-the-line (BEOL) build-up structure spans over the first die area and the second die area, and includes a first metallic seal directly over a first peripheral area of the first die area, a second metallic seal directly over a second peripheral area of the second die area, and a die-to-die routing extending through the first metallic seal and the second metallic seal to electrically connect the first die to the second die.
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公开(公告)号:US20250112192A1
公开(公告)日:2025-04-03
申请号:US18656367
申请日:2024-05-06
Applicant: Apple Inc.
Inventor: Sanjay Dabral , SivaChandra Jangam , Kunzhong Hu
Abstract: A system in package structure and method of fabrication using wafer reconstitution are described. In an embodiment a 3D system includes a mid-layer interposer a first package level underneath the mid-layer interposer and a second package level over the mid-layer interposer. First-level dies and second-level dies can be bonded to the mid-layer interposer with ultra fine micro bumps. Dies within the first and/or second package levels may optionally be connected with one or more optical interconnect paths.
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公开(公告)号:US20250112154A1
公开(公告)日:2025-04-03
申请号:US18643907
申请日:2024-04-23
Applicant: Apple Inc.
Inventor: Sanjay Dabral , Antonietta Oliva , Sambasivan Narayan , Jun Zhai , Vidhya Ramachandran , Kamal Sikka
IPC: H01L23/528 , H01L23/00 , H01L23/367 , H01L23/427 , H01L23/473 , H01L23/48 , H01L23/522
Abstract: Chip structures and electronic modules including a power delivery network (PDN) routing structure and signal routing structure to balance power, signaling, and thermal requirements are described. In an embodiment, the chip includes a device layer, a PDN routing structure on top of the device layer, and a signal routing structure underneath the device layer.
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公开(公告)号:US12237269B2
公开(公告)日:2025-02-25
申请号:US17655157
申请日:2022-03-16
Applicant: Apple Inc.
Inventor: Sanjay Dabral , Ravindranath T. Kollipara
IPC: H01L23/538 , H01L23/00 , H01L23/498 , H01L25/065
Abstract: Multi-chip modules and methods of fabrication are described. The MCM may include a plurality of dies in which die-to-die routing can be partitioned within multiple metal routing layers for shorter die-to-die routings, while longer die-to-die routing can be routed primarily in a single metal routing layer. The plurality of dies may also be arranged in a spaced apart relationship to accommodate additional wiring area, while preserving direct routing areas for the longer die-to-die routing.
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公开(公告)号:US12087689B2
公开(公告)日:2024-09-10
申请号:US18488561
申请日:2023-10-17
Applicant: Apple Inc.
Inventor: Sanjay Dabral , Jun Zhai , Jung-Cheng Yeh , Kunzhong Hu , Raymundo Camenforte , Thomas Hoffmann
IPC: H01L21/00 , H01L23/48 , H01L23/528 , H01L23/538 , H01L23/58 , H01L25/065 , H01L21/66 , H01L21/78 , H01L23/00
CPC classification number: H01L23/528 , H01L23/481 , H01L23/5386 , H01L23/585 , H01L25/0652 , H01L25/0655 , H01L21/78 , H01L22/20 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/30 , H01L24/32 , H01L2224/0557 , H01L2224/06181 , H01L2224/08145 , H01L2224/08225 , H01L2224/30181 , H01L2224/32145 , H01L2224/32225
Abstract: Multi-die structures and methods of fabrication are described. In an embodiment, a multi-die structure includes a first die, a second die, and die-to-die routing connecting the first die to the second die. The die-to-die interconnection may be monolithically integrated as a chip-level die-to-die routing, or external package-level die-to-die routing.
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