Pulsed radiation sources for transmission pyrometry

    公开(公告)号:US10281335B2

    公开(公告)日:2019-05-07

    申请号:US15656662

    申请日:2017-07-21

    Abstract: Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. The present disclosure discloses pulsed radiation sources, used to measure a broad range of low to high temperatures in the RTP chamber. In one example, two or more lasers, one of which emits pulses of radiation at 1,030 nm and one of which emits pulses of radiation at 1,080 nm, which measures temperatures below about 200° C., are used. In another example, two or more LEDs, one of which emits pulses of radiation at 1,030 nm and one of which emits pulses of radiation at 1,080 nm, are used. In yet another example, a broadband radiation source is used to emit pulses of radiation at least at 1,030 nm and 1,080 nm. These radiation sources are useful for detection of a broad range of low to high temperatures in the RTP chamber.

    OPTICAL DESIGN FOR LINE GENERATION USING MICROLENS ARRAY
    18.
    发明申请
    OPTICAL DESIGN FOR LINE GENERATION USING MICROLENS ARRAY 有权
    使用微阵列进行线生成的光学设计

    公开(公告)号:US20130112667A1

    公开(公告)日:2013-05-09

    申请号:US13649028

    申请日:2012-10-10

    Abstract: Embodiments of the invention provide an apparatus including a substrate support, a source of laser radiation emitting laser radiation along an optical path, and an illumination optics disposed along the optical path. The illumination optics includes a set of slow-axis and fast-axis lenses. The apparatus further includes a homogenizer disposed between of the illumination optics and the substrate support along the optical path. The homogenizer includes a first and a second micro-optic lenslet arrays of cylindrical lenses, wherein the second micro-optic lenslet array of cylindrical lenses has a relatively larger lenslet pitch than that of the first micro-optic lenslet array of cylindrical lenses, and lenslet axes of the first micro-optic lenslet array and lenslet axes of the second micro-optic lenslet array are oriented along an axis that is parallel to a fast axis of the source of laser radiation.

    Abstract translation: 本发明的实施例提供了一种装置,包括基板支撑件,沿着光路发射激光辐射的激光辐射源,以及沿光路设置的照明光学器件。 照明光学器件包括一组慢轴和快轴透镜。 该装置还包括沿着光路设置在照明光学器件和衬底支撑件之间的均质器。 均化器包括柱面透镜的第一和第二微小透镜阵列阵列,其中柱面透镜的第二微小透镜小透镜阵列具有比第一微小透镜柱面透镜阵列更小的小透镜间距,以及透镜 第一微光学小透镜阵列的轴线和第二微小透镜阵列的小透镜轴线沿着平行于激光辐射源的快轴的轴线定向。

    ATOMIC OXYGEN DETECTION IN SEMICONDUCTOR PROCESSING CHAMBERS

    公开(公告)号:US20220093428A1

    公开(公告)日:2022-03-24

    申请号:US17026905

    申请日:2020-09-21

    Abstract: Semiconductor processing systems are described to measure levels of atomic oxygen using an atomic oxygen sensor positioned within a substrate processing region of a substrate processing chamber. The processing systems may include a semiconductor chamber that has a chamber body which defines a substrate processing region. The processing chamber may also include a substrate support positioned within the substrate processing region. The atomic oxygen sensor may be positioned proximate to the substrate support in the substrate processing region of the chamber. Also described are semiconductor processing methods that include detecting a concentration of atomic oxygen in the substrate processing region with an atomic oxygen sensor positioned in the semiconductor processing chamber. The atomic oxygen sensor may include at least one electrode comprising a material selectively permeable to atomic oxygen over molecular oxygen, and may further include a solid electrolyte that selectively conducts atomic oxygen ions.

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