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公开(公告)号：US11545330B2
公开(公告)日：2023-01-03
申请号：US17318325
申请日：2021-05-12
Applicant: Axcelis Technologies, Inc.
Inventor： Wilhelm Platow , Paul Silverstein , Neil Bassom , Marvin Farley , David Sporleder
Abstract: An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.
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公开(公告)号：US20220367138A1
公开(公告)日：2022-11-17
申请号：US17318325
申请日：2021-05-12
Applicant: Axcelis Technologies, Inc.
Inventor： Wilhelm Platow , Paul Silverstein , Neil Bassom , Marvin Farley , David Sporleder
Abstract: An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.
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公开(公告)号：US20220139662A1
公开(公告)日：2022-05-05
申请号：US17339085
申请日：2021-06-04
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Neil Bassom , Xiao Xu
Abstract: An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.
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公开(公告)号：US11244800B2
公开(公告)日：2022-02-08
申请号：US17330801
申请日：2021-05-26
Applicant: Axcelis Technologies, Inc.
Inventor： Wilhelm Platow , Neil Bassom , Shu Satoh , Paul Silverstein , Marvin Farley
Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.
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公开(公告)号：US20220013323A1
公开(公告)日：2022-01-13
申请号：US17339025
申请日：2021-06-04
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Neil Bassom , Xiangyang Wu
IPC: H01J37/08 , H01J37/317
Abstract: An ion implantation system has an aluminum trichloride source material. An ion source is configured to ionize the aluminum trichloride source material and form an ion beam. The ionization of the aluminum trichloride source material further forms a by-product having a non-conducting material containing chlorine. A hydrogen introduction apparatus is configured to introduce a reducing agent including hydrogen to the ion source. The reducing agent is configured to alter a chemistry of the non-conducting material to produce a volatile gas by-product. A beamline assembly is configured to selectively transport the ion beam, and an end station is configured to accept the ion beam for implantation of ions into a workpiece.
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Patent Agency Ranking
公开(公告)号：US20250167021A1
公开(公告)日：2025-05-22
申请号：US18918276
申请日：2024-10-17
Applicant: Axcelis Technologies, Inc.
Inventor： Phillip Geissbuhler , Neil Bassom , David Hoglund , Vladimir Romanov
IPC: H01L21/67 , C23C14/48 , C23C14/54 , G01N21/88 , G01N21/958
Abstract: An ion implantation system includes a sensor for monitoring depositions of particles or flakes of other materials. The sensor monitors film thickness on a clear panel from behind the clear panel by emitting light and detecting reflections from the light. The system generates an alert for a buildup thickness. The composition of the film may also be detected by the sensor.
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公开(公告)号：US12112918B2
公开(公告)日：2024-10-08
申请号：US18481111
申请日：2023-10-04
Applicant: Axcelis Technologies, Inc.
Inventor： Wilhelm Platow , Neil Bassom
IPC: H01J37/317 , G21K5/04 , H01J37/147 , H01L21/04
CPC classification number: H01J37/3171 , G21K5/04 , H01J37/1475 , H01L21/0415
Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.
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公开(公告)号：US11823858B2
公开(公告)日：2023-11-21
申请号：US17705503
申请日：2022-03-28
Applicant: Axcelis Technologies, Inc.
Inventor： Wilhelm Platow , Neil Bassom
IPC: A61N5/10 , H01J37/317 , H01J37/147 , G21K5/04 , H01L21/04
CPC classification number: H01J37/3171 , G21K5/04 , H01J37/1475 , H01L21/0415
Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.
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公开(公告)号：US11699565B2
公开(公告)日：2023-07-11
申请号：US17514302
申请日：2021-10-29
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Neil Bassom , Edward Moore
IPC: H01J37/08 , H01J37/317
CPC classification number: H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/05
Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.
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公开(公告)号：US11699563B2
公开(公告)日：2023-07-11
申请号：US17339085
申请日：2021-06-04
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Neil Bassom , Xiao Xu
CPC classification number: H01J27/22 , H01J37/08 , H01J2237/08 , H01J2237/31701
Abstract: An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.
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