12.
    发明专利
    未知

    公开(公告)号:DE69928068T2

    公开(公告)日:2006-07-13

    申请号:DE69928068

    申请日:1999-11-24

    Applicant: CANON KK

    Abstract: An electron-emitting device includes a substrate (1), first and second carbon films (10) disposed so as to have a first gap (7) between the first and second carbon films on a surface of the substrate, and first and second electrodes (3,4) electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.

    13.
    发明专利
    未知

    公开(公告)号:DE69911355T2

    公开(公告)日:2004-07-08

    申请号:DE69911355

    申请日:1999-11-24

    Applicant: CANON KK

    Abstract: There is provided an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate (1), first and second carbon films (21b,21a) laid with a first gap (8) in between on the surface of the substrate (1), and first and second electrodes (4b,4a) electrically connected to the first carbon film (21b) and to the second carbon film (21a), respectively. In the electron-emitting device, the distal portion (B) of the first carbon film (21B) is located above the surface of the substrate (1) at a greater distance (Hb) than the distance (Ha) of the distal portion (A) of the second carbon film (21a) above the surface of the substrate (1). In use, to effect electron emission, a higher potential is applied to the first electrode (4b) than to the second electrode (4a). An electron source is provided having a multiplicity of these devices on a common substrate (1). Such an electron source is provided in image forming apparatus opposite to an image forming member.

    14.
    发明专利
    未知

    公开(公告)号:DE69209607T2

    公开(公告)日:1996-08-29

    申请号:DE69209607

    申请日:1992-10-07

    Applicant: CANON KK

    Abstract: An electron-emitting device having an electron-emitting portion between electrodes on a substrate comprises a region A and a region B, the region A being electrically connected through the region B to at least one of the electrodes, electric conductivity s of the material mainly constituting the region A and electric conductivity of the material s mainly constituting the region B being in the relation of s > s , and the region A being the electron-emitting portion. An electron beam-generating apparatus and image-forming apparatus comprise the electron-emitting device and a modulation means for modulating the electron beams emitted from the electron-emitting elements in accordance with information signals.

    Electron-emitting device, and electron beam-generating apparatus and image-forming apparatus employing the device

    公开(公告)号:AU655677B2

    公开(公告)日:1995-01-05

    申请号:AU2628992

    申请日:1992-10-07

    Applicant: CANON KK

    Abstract: An electron-emitting device having an electron-emitting region between electrodes on a substrate where the electron-emitting region contains fine particles dispersed therein at an areal occupation ratio of the fine particles ranging from 20 % to 75 % of the electron-emitting region is disclosed. The other electron-emitting device where the electron-emitting region contains fine particles being arranged at gaps of from 5 ANGSTROM to 100 ANGSTROM and having average particle diameter of from 5 ANGSTROM to 1000 ANGSTROM is also disclosed. Electron beam-generating apparatus and image-forming apparatus comprise one of the electron-emitting regions and a modulation means for modulating the electron beams emitted from the electron-emitting devices in accordance with information signals. Furthermore an electron emitting device is disclosed having an electron emitting region between electrodes on a substrate, wherein a measured voltage application length (L) in said electron-emitting region (15) ranges from 0.5 to 30 nm for an applied voltage of 1 to 4 volts.

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