公开(公告)号：AU2003214653B2

公开(公告)日：2005-02-17

申请号：AU2003214653

申请日：2003-03-19

Applicant: CASIO COMPUTER CO LTD

Inventor： TERAZAKI TSUTOMU ,  YAMAMTO TADAO ,  NAKAMURA OSAMU ,  TAKEYMA KEISHI

IPC: B01J3/00 ,  B01J3/03 ,  B01J19/00 ,  B01J19/24 ,  C01B3/32 ,  C01B3/38 ,  C01B3/48 ,  F28F3/04 ,  F28F13/18 ,  H01M8/04 ,  H01M8/06 ,  H01M8/12 ,  B01J019/00 ,  F28D009/00 ,  C01B003/32 ,  C01B003/38 ,  B01J019/24 ,  F28F013/00 ,  F28F009/20

Abstract: A chemical reaction apparatus includes a solid body which has an outer surface, and in which at least one flow path which allows a chemical medium to flow is formed. This body has a heating element which heats the chemical medium in the flow path to accelerate a chemical reaction of the chemical medium, and a heat radiation preventing film which covers at least a portion of the outer surface of the body, and prevents radiation of heat generated by the heating element from a portion of the outer surface.

公开(公告)号：JP2011082388A

公开(公告)日：2011-04-21

申请号：JP2009234395

申请日：2009-10-08

Applicant: Casio Computer Co Ltd ,  Saitama Univ ,  カシオ計算機株式会社 ,  国立大学法人埼玉大学

Inventor： SAKAI MASAMICHI ,  NAKAMURA OSAMU

IPC: H01L29/82 ,  H01L21/8246 ,  H01L27/105 ,  H03K19/18

Abstract: PROBLEM TO BE SOLVED: To provide a spintronics device high in charge current to spin current conversion efficiency, and capable of providing a high-intensity spin current. SOLUTION: This spintronics device includes: a spin current generation region 30 having a first end face and a second end face facing each other, and formed of a nonmagnetic bipolar conductive metal wherein a hole and an electron have carrier densities and mobilities at comparable levels, and a hole coefficient is zero; a first main electrode 20 arranged on the first end face and formed of a ferromagnetic material for injecting spin-polarized holes into the spin current generation region 30; and a second main electrode 40 arranged on the second end face for injecting electrons into the spin current generation region 30. Holes and electrons are made to be transported in the same direction by Lorentz force, and charge of the holes and that of the electrons are neutralized with each other to provide the spin current. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种自旋电子装置，其具有高的自旋电流转换效率的充电电流，并且能够提供高强度的自旋电流。 解决方案：该自旋电子装置包括：具有第一端面和彼此面对的第二端面的自旋电流产生区域30，并且由非磁性双极导电金属形成，其中孔和电子具有载流子密度和迁移率 可比水平，孔系数为零; 第一主电极20，布置在第一端面上，由用于将自旋极化孔注入到自旋电流产生区域30中的铁磁材料形成; 以及布置在第二端面上的用于将电子注入到自旋电流产生区域30中的第二主电极40.通过洛伦兹力使孔和电子以相同的方向输送，空穴和电子的电荷为 彼此中和以提供自旋电流。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011034747A

公开(公告)日：2011-02-17

申请号：JP2009178649

申请日：2009-07-31

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： NAKAMURA OSAMU

IPC: H05B33/04 ,  H01L51/50 ,  H05B33/10

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting device and a method of manufacturing the same, compact with a structure of high heat dissipation efficiency, capable of restraining degradation of element life and emission characteristics of light-emitting elements, as well as an electronic equipment having a light-emitting panel with fluctuation of luminance restrained.
SOLUTION: A display panel 100 is provided with a panel structure in which an array substrate 10 with pixel arrays 21 fitted and a sealing substrate 30 with recessed parts 36 fitted are jointed in opposition to each other. The array substrate 10 is provided with high-radiation thin film 22 so as to cover the pixel arrays 21, and the sealing substrate 30 is provided with high-radiation thin film 32 so as to be opposed to the pixel arrays 21. Further, a high thermal-conductivity gas is sealed in a sealing space 35 formed by jointing the array substrate 10 and the sealing substrate 30.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题为了提供一种发光装置及其制造方法，具有能够抑制元件寿命劣化和发光元件的发光特性的具有高散热效率的结构的紧凑型，作为 以及具有抑制了亮度波动的发光面板的电子设备。 解决方案：显示面板100设置有面板结构，其中装配有像素阵列21的阵列基板10和装配有凹入部分36的密封基板30彼此相对地接合。 阵列基板10设置有高辐射薄膜22以覆盖像素阵列21，并且密封基板30设置有与像素阵列21相对的高辐射薄膜32.此外， 高导热性气体被密封在通过连接阵列基板10和密封基板30而形成的密封空间35中。（C）2011，JPO＆INPIT

公开(公告)号：JP2011032506A

公开(公告)日：2011-02-17

申请号：JP2009177825

申请日：2009-07-30

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： NAKAMURA OSAMU ,  KIZU TAKASHI

IPC: C23C14/24 ,  H01L51/50 ,  H05B33/10

Abstract: PROBLEM TO BE SOLVED: To provide a device and method for manufacturing a thin film electrode, in which the thin film electrode having uniform film quality of high quality is formed with satisfactory reproducibility while stably controlling film-deposition speed.
SOLUTION: As for an electron beam vacuum deposition device 100, a raw material housing part comprising a water cooled hearth 111, an insertion crucible 112A and an adhesion tool 113A is provided in a vacuum chamber 110. The adhesion tool 113A is interposed between the water cooled hearth 111 and the insertion crucible 112A and has a shape uniformly adhering to a part between an inner surface (a side surface and a bottom surface) of a recessed part 111a of the water cooled hearth 111 and an outer peripheral surface (a side surface and a bottom surface) of the insertion crucible 112A.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造薄膜电极的装置和方法，其中在稳定地控制成膜速度的同时，以良好的重现性形成具有高质量的均匀膜质量的薄膜电极。 解决方案：对于电子束真空沉积装置100，在真空室110中设置包括水冷床111，插入坩埚112A和粘合工具113A的原料容纳部分。粘合工具113A插入 在水冷床111和插入坩埚112A之间，具有均匀地粘附在水冷床111的凹部111a的内表面（侧面和底面）与外周面（ 插入坩埚112A的侧面和底面）。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010153182A

公开(公告)日：2010-07-08

申请号：JP2008329549

申请日：2008-12-25

Applicant: Casio Computer Co Ltd ,  カシオ計算機株式会社

Inventor： MIFUJI KIMIYASU ,  NAKAMURA OSAMU

IPC: H01M8/02 ,  H01M8/04 ,  H01M8/06 ,  H01M8/12

CPC classification number: Y02E60/525

Abstract: PROBLEM TO BE SOLVED: To provide a fuel cell device suppressing heat conducted from a power generation cell to the outside in starting while suppressing power loss in stationary operation.
SOLUTION: The fuel cell device includes the power generation cell generating electric power by reaction between a fuel and oxygen, an output electrode electrically connected to an electrode of the power generation cell and a conductive member provided to be connected to/disconnected from the output electrode at one end and electrically connected to the electrode of the power generation cell at the other end.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在停止动作的同时抑制动力损失的同时起动时抑制从发电电池传递到外部的热的燃料电池装置。 解决方案：燃料电池装置包括通过燃料和氧气之间的反应产生电力的发电单元，电连接到发电单元的电极的输出电极和设置成连接到/断开的导电构件 一端的输出电极，另一端与发电电池的电极电连接。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2004006265A

公开(公告)日：2004-01-08

申请号：JP2003069442

申请日：2003-03-14

Applicant: CASIO COMPUTER CO LTD

Inventor： YAMAMOTO TADAO ,  NAKAMURA OSAMU ,  TAKEYAMA HIROYUKI ,  TERASAKI TSUTOMU

IPC: B01J3/00 ,  B01J3/03 ,  B01J19/00 ,  B01J19/24 ,  C01B3/32 ,  C01B3/38 ,  C01B3/48 ,  F28F3/04 ,  F28F13/18 ,  H01M8/04 ,  H01M8/06 ,  H01M8/12

Abstract: PROBLEM TO BE SOLVED: To suppress heat energy loss in a chemical reaction apparatus supplying heat energy to a catalyst layer installed inside a minute passage formed on one surface of a substrate. SOLUTION: Substrates 11, 21 are joined each other. A reaction catalyst layer 15 is installed inside the meandering minute passage 12 formed on the inner surface of the first substrate 11. A heat radiation preventing film 16 is installed on the outer surface of the first substrate 11. A thin film heater 22 is installed on a surface facing the first substrate of the second substrate 21. A heat radiation preventing film 23 is installed on the outer surface of the second substrate 21. Specified heat energy is supplied to the reaction catalyst layer 15 inside the passage 12 by the thin film heater 22 during chemical reaction, and heat radiation from the outer surfaces of the substrates 11, 21 is suppressed with both heat radiation preventing films 16, 23 to suppress the heat energy loss. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2001113705A

公开(公告)日：2001-04-24

申请号：JP29745499

申请日：1999-10-19

Applicant: CASIO COMPUTER CO LTD

Inventor： KONO ICHIRO ,  NAKAMURA OSAMU

IPC: B41J2/05 ,  B41J2/135

Abstract: PROBLEM TO BE SOLVED: To provide a metallic mask optimum for dry etching, a high performance ink-jet printer head provided with the metallic mask, and a production method thereof. SOLUTION: A silicon wafer having an orifice plate laminated on the uppermost laver of a large number of head chips, is set on a stage of a film forming chamber of a sputterina device so as to execute a film forming pretreatment of heating at l00 deg.C-150 deg.C for 30 minutes or more and cooling down to 20-30 deg.C (room temperature). Then, a sputtering operation is executed on the orifice plate with Ti of a 99.999% or more purity, 4.0±1.2 Pa vacuum pressure, 70±25W main sputtering power, Ar sputtering gas conditions so as to form a Ti thin film with characteristics of a 3-4 mΩcm specific resistance and a non-hexagnal close-packed structure without an optical multiple reflection. After forming a mask pattern corresponding to an ejection nozzle on the Ti film, a perforating process is executed by a helicon wave dry etching device.

公开(公告)号：JP2000168088A

公开(公告)日：2000-06-20

申请号：JP34804098

申请日：1998-12-08

Applicant: CASIO COMPUTER CO LTD

Inventor： TANAKA KOICHI ,  NAKAMURA OSAMU

IPC: B41J2/05 ,  B41J2/16

Abstract: PROBLEM TO BE SOLVED: To provide a heating resistor having a protecting film of a film thickness of 100-500 Å and a high resistance to cavitation damage and electrolytic etching and its manufacture. SOLUTION: An approximately 7000 Å film of a double-layer structure of TaSiO is first formed by a thin film formation technique, on which an electrode film is formed. An electrode pattern of a common electrode 18 and an individual wiring electrode 21 is formed to the electrode film by a photolithographic technique, and a heating element pattern of a 40 μm×40 μm heating part 22 is formed to a resistor film of the double-layer structure. An Si/Ta mole ratio of an upper layer 22b of the resistor film of the double-layer structure is set smaller than an Si/Ta mole ratio of a lower layer 22a. The upper layer 22b including much Ta is oxidized with heat by annealing (heat treatment) for 10 minutes at a substrate temperature of 400 deg.C. In consequence, a 100-500 Åautoxidation protecting layer 22b-1 of a TaSiO film is formed on the heating part 22.

公开(公告)号：JPH0689654A

公开(公告)日：1994-03-29

申请号：JP26663892

申请日：1992-09-08

Applicant: CASIO COMPUTER CO LTD

Inventor： NAKAMURA OSAMU

IPC: H01J1/30 ,  H01J1/304 ,  H01J61/067

Abstract: PURPOSE:To provide an electron emitting electrode capable of operating at a low voltage by forming a plurality of tapered projections on the electrode. CONSTITUTION:An electron emitting electrode 1 is provided, on the surface of an electrode main body 2, with projections 3 each made of substance having a work function smaller than that constituting the electrode main body 2. The projection 3 is formed into a conical shape becoming smaller from the electrode main body 2 toward the tip thereof. The plurality of projections 3 are aligned in the longitudinal direction of the electrode main body 2. In the electron emitting electrode 1, electric field strength of the conical projection 3, particularly at the tip thereof becomes large, and operating at a low voltage can be realized. Since the projection 3 is made of substance having a work function smaller than that constituting the electrode main body 2, the electric field strength of the projection 3 becomes further large and a drive voltage becomes further lower.

公开(公告)号：JPH01308082A

公开(公告)日：1989-12-12

申请号：JP13838688

申请日：1988-06-07

Applicant: CASIO COMPUTER CO LTD

Inventor： NAKAMURA OSAMU

IPC: H01L29/201 ,  H01L21/20 ,  H01L21/338 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812

Abstract: PURPOSE:To provide high carrier mobility and high carrier concentration and to accelerate a switching speed by forming a carrier moving layer in a doping superlattice structure formed of a doped layer and an undoped layer. CONSTITUTION:A carrier moving layer 14 has a doping superlattice structure formed by alternately laminating N-type GaAs layers 21 in which an impurity such as Si is doped and GaAs layers 22 in which it is not doped. In this case, the thickness of each layer is preferably extremely thin such as 100Angstrom or less. Particularly, the layer 21 is preferably 1 to 50Angstrom , and the layer 22 is preferably 50-100Angstrom thick. The number of the laminated layers is preferably 4 to 30. In this case, the layer 14 can obtain electrons as moving carrier from the layer 21. A potential difference between the layers 21 and 22 is very small. The layer 22 is not affected by the influence of the ionized impurity, and the electrons can move at a high speed.