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    METHOD USING MULTI-COMPONENT COLLOIDAL ABRASIVES FOR CMP PROCESSING OF SEMICONDUCTOR AND OPTICAL MATERIALS
    11.
    发明申请
    METHOD USING MULTI-COMPONENT COLLOIDAL ABRASIVES FOR CMP PROCESSING OF SEMICONDUCTOR AND OPTICAL MATERIALS 审中-公开
    使用多组分胶体磨料进行半导体和光学材料的CMP处理的方法

    公开(公告)号：WO2004053456A3

    公开(公告)日：2005-01-13

    申请号：PCT/US0337844

    申请日：2003-11-25

    Applicant: CORNING INC

    Inventor： BELLMAN ROBERT A ,  SABIA ROBERT ,  UKRAINCZYK LJERKA ,  WHALEN JOSEPH M

    IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/302 ,  H01L21/461

    CPC classification number: C09K3/1472 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

    Abstract: A method is provided for using abrasive colloidal particles having multi-component composition comprising mixed 1) metal or metalloid oxides, 2) oxyfluorides, or 3) oxynitrides, each grouping (1, 2, or 3) individually alone or in combination thereof, in a chemical-mechanical manufacturing process for planarizing or polishing metal, semiconductor, dielectric, glass, polymer, optical, and ceramic materials. The particles exhibit a modified surface chemistry performance and have an isoelectric point (pHIEP) greater than the pH of the dispersed particles in solution, and with a stabilized particle dispersion at pH values of interest for CMP operations. The composition of the multi-component particles may be adjusted as desired, in regard to their chemical or physical properties such as surface chemistry, hardness, solubility, or degree of compatibility with the workpiece material being planarized or polished. Also provided is a chemical-mechanical planarization slurry mixture incorporating such multi-component particles and with a solution chemistry that enhances the CMP effects by in-part adjusting the pH of the solution away from the pHIEP of the media to maximize dispersion.

    Abstract translation: 提供了一种使用具有多组分组合物的磨料胶体颗粒的方法，其包括混合1）金属或准金属氧化物，2）氟氧化物或3）氮氧化物，每个单独或组合使用（1,2或3）单独或组合在 用于平面化或抛光金属，半导体，电介质，玻璃，聚合物，光学和陶瓷材料的化学机械制造方法。 颗粒表现出改性的表面化学性能，并具有大于溶液中分散颗粒的pH的等电点（pHIEP），并且在CMP操作的pH值下具有稳定的颗粒分散体。 关于它们的化学或物理性质如表面化学性质，硬度，溶解度，或与被平坦化或抛光的工件材料的相容程度，可以根据需要调节多组分颗粒的组成。 还提供了一种化学机械平面化浆料混合物，其结合了这种多组分颗粒和溶液化学，其通过部分地将溶液的pH从介质的pHIEP调节以使分散最大化来增强CMP效果。

    MASK, MASK BLANK, PHOTOSENSITIVE FILM THEREFOR AND FABRICATION THEREOF
    12.
    发明申请
    MASK, MASK BLANK, PHOTOSENSITIVE FILM THEREFOR AND FABRICATION THEREOF 审中-公开
    遮罩，遮罩，其感光膜及其制造方法

    公开(公告)号：WO2004107046A2

    公开(公告)日：2004-12-09

    申请号：PCT/US2004014005

    申请日：2004-05-05

    Applicant: BELLMAN ROBERT A ,  BORRELLI NICHOLAS F ,  WALTON ROBIN M ,  CORNING INC

    Inventor： BELLMAN ROBERT A ,  BORRELLI NICHOLAS F ,  WALTON ROBIN M

    IPC: C03C17/02 ,  C03C23/00 ,  G03F1/00 ,  G03F1/26 ,  G03F1/60 ,  G03F1/14

    CPC classification number: G03F1/60 ,  C03C17/02 ,  C03C23/002 ,  C03C2217/23 ,  C03C2218/32 ,  C03C2218/328 ,  G03F1/26

    Abstract: Disclosed are masks and mask blanks for photolithographic processes, photosensitive films and fabrication method therefor. Photosensitive films are deposited on a substrate in the masks for recording permanent pattern features via UV exposure. The masks are advantageously phase-shifting, but can be gray-scale masks having index patterns with arbitrary distribution of refractive index and pattern depth. The masks may have features above the surface formed from opaque or attenuating materials. Boro-germano-silicate photosensitive films having a composition consisting essentially, in terms of mole percentage, of: 0-20% of B2O3, 5-25% of GeO2 and the remainder SiO2 can be used for the film. The film is advantageously deposited by using PECVD wherein tetramethoxygermane is used as the germanium source.

    Abstract translation: 公开了用于光刻工艺的掩模和掩模坯料，感光膜及其制造方法。 感光膜沉积在掩模中的基底上，用于通过UV曝光记录永久图案特征。 掩模有利地是相移，但是可以是具有折射率和图案深度的任意分布的索引图案的灰度掩模。 掩模可以具有由不透明或衰减材料形成的表面上方的特征。 具有组成基本上以摩尔百分比为基准的硼硅酸盐光敏膜：0-20％的B2O3，5-25％的GeO2和剩余的SiO 2可用于该膜。 该薄膜有利地通过使用四甲氧基锗烷作为锗源的PECVD沉积。

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