-
公开(公告)号:US20170317255A1
公开(公告)日:2017-11-02
申请号:US15652987
申请日:2017-07-18
Applicant: EPISTAR CORPORATION
Inventor: Min-Hsun Hsieh , Guan-Ru He , Chao-Hsing Chen , Jui-Hung Yeh , Chia-Liang Hsu
IPC: H01L33/62 , H01L25/075
CPC classification number: H01L33/62 , H01L21/568 , H01L25/0753 , H01L2224/04105 , H01L2224/18 , H01L2224/19 , H01L2924/3512
Abstract: The present application discloses a light-emitting array, comprising a first light-emitting chip; a second light-emitting chip; and a conductive line electrically connected to the first light-emitting chip and the second light-emitting chip, wherein the conductive line includes a first segment and a second segment having a radius curvature different from that of the first segment.
-
公开(公告)号:US09553127B2
公开(公告)日:2017-01-24
申请号:US14954708
申请日:2015-11-30
Applicant: Epistar Corporation
Inventor: Li-Ping Jou , Yu-Chen Yang , Jui-Hung Yeh
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: A light-emitting diode structure comprises a first epitaxial unit; a second epitaxial unit separated from the first epitaxial unit; a crossover metal layer comprising a first protruding portion entering the first epitaxial unit; a conductive layer separated from the crossover metal layer and comprising a second protruding portion entering the second epitaxial unit; a conductive connecting layer surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.
Abstract translation: 发光二极管结构包括第一外延单元; 与所述第一外延单元分离的第二外延单元; 交叉金属层,包括进入第一外延单元的第一突出部分; 与所述交叉金属层分离并包括进入所述第二外延单元的第二突出部分的导电层; 围绕所述第一突出部分的导电连接层; 以及布置在导电连接层上的电极。
-
公开(公告)号:US09202981B2
公开(公告)日:2015-12-01
申请号:US14330914
申请日:2014-07-14
Applicant: Epistar Corporation
Inventor: Li-Ping Jou , Yu-Chen Yang , Jui-Hung Yeh
CPC classification number: H01L27/156 , H01L27/153 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/62 , H01L2933/0016
Abstract: An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.
Abstract translation: 具有N个发光二极管单元(N≥3)的LED阵列包括永久基板,永久基板上的接合层,接合层上的第二导电层,第二导电层上的第二隔离层,交叉金属 所述第二隔离层上的第一隔离层,所述交叉金属层上的第一隔离层,所述第一隔离层上的导电连接层,所述导电连接层上的外延结构,以及所述外延结构上的第一电极层。 发光二极管单元通过交叉金属层彼此电连接。
-
-