公开(公告)号：US12166156B2

公开(公告)日：2024-12-10

申请号：US18401106

申请日：2023-12-29

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Tsung-Hsun Chiang ,  Bo-Jiun Hu ,  Wen-Hung Chuang ,  Yu-Ling Lin

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/02 ,  H01L33/08 ,  H01L33/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

公开(公告)号：US12080831B2

公开(公告)日：2024-09-03

申请号：US18212449

申请日：2023-06-21

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Wen-Hung Chuang ,  Tzu-Yao Tseng ,  Cheng-Lin Lu

IPC: H01L33/40 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y115/10 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y2115/10 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.

公开(公告)号：US12002904B2

公开(公告)日：2024-06-04

申请号：US17241958

申请日：2021-04-27

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Chien-Chih Liao ,  Wen-Hung Chuang ,  Min-Yen Tsai ,  Bo-Jiun Hu

IPC: H01L23/00 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/44 ,  H01L23/562 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

公开(公告)号：US11990575B2

公开(公告)日：2024-05-21

申请号：US18205920

申请日：2023-06-05

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L21/78 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US11942510B2

公开(公告)日：2024-03-26

申请号：US17875068

申请日：2022-07-27

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Chi-Shiang Hsu ,  Yong-Yang Chen

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emitting unit without covering the first insulating layer opening on the second light-emitting unit; a first electrode pad covering a part of the plurality of the light-emitting units; and a second electrode pad covering another part of the plurality of light-emitting units.

公开(公告)号：US11699776B2

公开(公告)日：2023-07-11

申请号：US17185551

申请日：2021-02-25

Applicant: EPISTAR CORPORATION

Inventor： Schang-Jing Hon ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chien-Fu Shen ,  Jia-Kuen Wang ,  Hung-Che Chen

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/44 ,  H01L33/46 ,  H01L33/20 ,  H01L33/24

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

Abstract: A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stack, the first extension area is located outside the projected area and located between the second conductive part and the third side.

公开(公告)号：US11063087B2

公开(公告)日：2021-07-13

申请号：US16510388

申请日：2019-07-12

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  I-Lun Ma ,  Bo-Jiun Hu ,  Yu-Ling Lin ,  Chien-Chih Liao

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/42 ,  H01L33/00 ,  H01L33/30 ,  H01L33/12

Abstract: A light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a trench formed between the first light-emitting unit and the second light-emitting unit, and exposing the substrate; and a connecting electrode including a first connecting part on the first light-emitting unit and connected to the first semiconductor layer of the first light-emitting unit, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

公开(公告)号：US10658544B2

公开(公告)日：2020-05-19

申请号：US16382873

申请日：2019-04-12

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Yu-Chen Yang ,  Li-Ping Jou ,  Hui-Chun Yeh ,  Yi-Wen Ku

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/20 ,  H01L33/60 ,  H01L33/30 ,  H01L33/08 ,  H01L33/62 ,  H01L33/44 ,  H01L33/00

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

公开(公告)号：US10559717B2

公开(公告)日：2020-02-11

申请号：US16189540

申请日：2018-11-13

Applicant: EPISTAR CORPORATION

Inventor： Chun-Teng Ko ,  Chao-Hsing Chen ,  Jia-Kuen Wang ,  Yen-Liang Kuo ,  Chih-Hao Chen ,  Wei-Jung Chung ,  Chih-Ming Wang ,  Wei-Chih Peng ,  Schang-Jing Hon ,  Yu-Yao Lin

IPC: H01L33/22 ,  H01L33/38 ,  H01L33/46 ,  H01L33/00 ,  H01L33/62 ,  H01L33/06 ,  H01L33/32 ,  H01L33/30

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween, wherein the first semiconductor layer includes a surrounding exposed region not covered by the active layer, and the surrounding exposed region surrounds the active layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surrounding exposed region of the first semiconductor layer; an electrode layer formed on the first conductive region in the surrounding exposed region; an outside insulating layer covering a portion of the conductive layer and the electrode layer, and including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate, wherein the semiconductor stack is located on one side of the bonding layer, and the conductive substrate is located on the other side of the bonding layer.

公开(公告)号：US10446721B2

公开(公告)日：2019-10-15

申请号：US15880908

申请日：2018-01-26

Applicant: EPISTAR CORPORATION

Inventor： Yi-Hung Lin ,  Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Jen-Chieh Yu ,  Guan-Wu Chen

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.