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    Light emitting device and manufacture method thereof
    12.
    发明授权
    Light emitting device and manufacture method thereof 有权
    发光元件及其制造方法

    公开(公告)号：US08816386B2

    公开(公告)日：2014-08-26

    申请号：US14157369

    申请日：2014-01-16

    Applicant: Epistar Corporation

    Inventor： Tzer-Perng Chen ,  Jen-Chau Wu ,  Chuan-Cheng Tu ,  Yuh-Ren Shieh

    IPC: H01L33/00 ,  H01L33/46 ,  H01L33/38 ,  H01L33/36 ,  H01L33/62

    CPC classification number: H01L33/385 ,  H01L25/0753 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.

    Abstract translation: 提供了包括发光结构，第一介电层，第一金属层，第二金属层和第二介电层的倒装LED。 发光结构包括第一导电层，有源层和第二导电层。 有源层设置在第一导电层上，第二导电层设置在有源层上。 第一金属层设置在发光结构上并与第一导电层接触，第一金属层的一部分设置在第一介电层上。 第二金属层设置在发光结构上并与第二导电层接触，第二金属层的一部分设置在第一介电层上。 第二电介质层设置在第一电介质层上。 第一导电层包括粗糙表面以提高光提取效率。

    LED assembly for omnidirectional light applications
    14.
    发明授权
    LED assembly for omnidirectional light applications 有权

    公开(公告)号：US11450791B2

    公开(公告)日：2022-09-20

    申请号：US17164750

    申请日：2021-02-01

    Applicant: EPISTAR CORPORATION ,  Kaistar Lighting (Xiamen) Co., Ltd

    Inventor： Tzer-Perng Chen ,  Tzu-Chi Cheng

    IPC: H01L33/50 ,  H01L33/48 ,  H01L33/62

    Abstract: An LED bulb with an LED assembly, including a substrate having a first top surface, longer side surface and shorter side surface; a mount disposed on the first top surface, having a first inner side surface and second inner side surface facing the first inner side surface; a plurality of LED chips on the first top surface, arranged between the first and second inner side surfaces, having a second top surface; an electrode plate formed on the mount, electrically connected to the plurality of LED chips with a third top surface which does not extend beyond the shorter side surface in a top view; and a phosphor layer covering the plurality of LED chips, mount, and electrode plate, without covering the side surfaces; and a cover covering the LED assembly. The third top surface is higher than the second top surface in an elevation based on the first top surface.

    Optoelectronic semiconductor device
    15.
    发明授权
    Optoelectronic semiconductor device 有权
    光电半导体器件

    公开(公告)号：US09362456B2

    公开(公告)日：2016-06-07

    申请号：US13625139

    申请日：2012-09-24

    Applicant: EPISTAR CORPORATION

    Inventor： Wei-Yo Chen ,  Yen-Wen Chen ,  Chien-Yuan Wang ,  Min-Hsun Hsieh ,  Tzer-Perng Chen

    IPC: H01L33/00 ,  H01L33/38 ,  H01L31/0224 ,  H01L23/00

    CPC classification number: H01L33/38 ,  H01L24/02 ,  H01L31/022408 ,  H01L31/022433 ,  H01L33/382 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  Y02E10/50 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.

    Abstract translation: 光电子半导体器件包括衬底，具有形成在衬底上的有源层和形成在半导体系统上的电极结构的半导体系统，其中具有至少第一导电类型接触区或第一导电类型的电极结构的布局 接合焊盘，第二导电型接合焊盘，第一导电型延伸电极和第二导电型延伸电极，其中第一导电类型延伸电极和第二导电类型延伸电极具有三维交叉，部分第一导电性 第一导电型接触区或第一导电型接合垫位于有源层的相对侧上。

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