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公开(公告)号：US09929207B2
公开(公告)日：2018-03-27
申请号：US15059936
申请日：2016-03-03
Applicant: EPISTAR CORPORATION
Inventor： Rong-Ren Lee , Cheng-Hong Chen , Chih-Peng Ni , Chun-Yu Lin
CPC classification number: H01L27/15 , H01L28/20 , H01L33/025 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.
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公开(公告)号：US09893244B2
公开(公告)日：2018-02-13
申请号：US14858477
申请日：2015-09-18
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu , Masafumi Sano , Chih-Ming Wang
CPC classification number: H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
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公开(公告)号：US10529898B2
公开(公告)日：2020-01-07
申请号：US15678885
申请日：2017-08-16
Applicant: Epistar Corporation
Inventor： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu , Masafumi Sano , Chih-Ming Wang
Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
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公开(公告)号：US10217904B2
公开(公告)日：2019-02-26
申请号：US15013439
申请日：2016-02-02
Applicant: EPISTAR CORPORATION
Inventor： Hung-Hsuan Chen , Chih-Peng Ni , Jui-Hsien Chang , Hsin-Yu Lee , Tsen-Kuei Wang , Chen-Yen Fan
IPC: H01L29/18 , H01L33/00 , H01L33/38 , H01L33/60 , H01L33/48 , H01L33/62 , H01L33/50 , H01L25/075 , H01L21/56
Abstract: This disclosure discloses a light-emitting device. The light-emitting device has a first outermost sidewall and includes a light-emitting diode and an electrode. The light-emitting diode has a pad and a side surface. The electrode has a segment formed on the pad to extend beyond the side surface, and a first protrusion extending from the segment to the first outermost sidewall.
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公开(公告)号：US10686106B2
公开(公告)日：2020-06-16
申请号：US15973091
申请日：2018-05-07
Applicant: Epistar Corporation
Inventor： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
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Patent Agency Ranking
公开(公告)号：US09312303B2
公开(公告)日：2016-04-12
申请号：US14204764
申请日：2014-03-11
Applicant: Epistar Corporation
Inventor： Rong-Ren Lee , Cheng-Hong Chen , Chih-Peng Ni , Chun-Yu Lin
CPC classification number: H01L27/15 , H01L28/20 , H01L33/025 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.
Abstract translation: 一种制造发光器件的方法包括以下步骤：提供第一衬底; 在所述第一衬底上形成半导体结构，其中所述半导体结构包括第一类型半导体层，第二类型半导体层和在所述第一类型半导体层和所述第二类型半导体层之间的有源层; 通过所述第二类型半导体和所述有源层形成隔离区，以将所述半导体结构分离成所述第一基板上的第一部分和第二部分; 以及向所述第二部分注入具有电流密度的电流，以使所述第二部分永久分解; 其中在所述第二部分被永久分解之后，所述第一部分能够产生电磁辐射，并且所述第二部分不能产生电磁辐射。
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公开(公告)号：US11482651B2
公开(公告)日：2022-10-25
申请号：US16900557
申请日：2020-06-12
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
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公开(公告)号：US09741905B2
公开(公告)日：2017-08-22
申请号：US14858477
申请日：2015-09-18
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu , Masafumi Sano , Chih-Ming Wang
Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
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公开(公告)号：US09142740B2
公开(公告)日：2015-09-22
申请号：US13886083
申请日：2013-05-02
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu , Masafumi Sano , Chih-Ming Wang
CPC classification number: H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.
Abstract translation: 光电子元件包括具有第一顶表面的光电单元; 第一顶表面上的第一金属层; 围绕光电单元并暴露第一顶表面的第一透明结构; 以及在第一透明结构上的第一接触层，包括与第一金属层电连接的连接部分。
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公开(公告)号：US20130313594A1
公开(公告)日：2013-11-28
申请号：US13886083
申请日：2013-05-02
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan HAN , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu , Masafumi Sano , Chih-Ming Wang
CPC classification number: H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.
Abstract translation: 光电子元件包括具有第一顶表面的光电单元; 第一顶表面上的第一金属层; 围绕光电单元并暴露第一顶表面的第一透明结构; 以及在第一透明结构上的第一接触层，包括与第一金属层电连接的连接部分。
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