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    Light-emitting device
    1.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US09876139B2

    公开(公告)日：2018-01-23

    申请号：US15345185

    申请日：2016-11-07

    Applicant: EPISTAR CORPORATION

    Inventor： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

    IPC: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42

    CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

    Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

    Light-emitting device
    2.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08866174B2

    公开(公告)日：2014-10-21

    申请号：US13772149

    申请日：2013-02-20

    Applicant: Epistar Corporation

    Inventor： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao Hsing Chen

    IPC: H01L33/00 ,  H01L33/20 ,  H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/38 ,  H01L33/10

    CPC classification number: H01L33/20 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

    Abstract: A light-emitting device having a light-emitting stacked layer with a first conductivity type semiconductor layer is provided. A light-emitting layer is formed on the first conductivity type semiconductor layer. A second conductivity type semiconductor layer is formed on the light-emitting layer. The upper surface of the second conductivity type semiconductor layer is a textured surface. A planarization layer is formed on a first part of the second conductivity type semiconductor layer. A transparent conductive oxide layer is formed on the planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion on the planarization layer and a second portion having a first plurality of cavities on the second conductivity type semiconductor layer. An electrode is formed on the first portion of the transparent conductive oxide layer, and a reflective metal layer is formed between the transparent conductive oxide layer and the electrode.

    Abstract translation: 提供具有第一导电型半导体层的发光层叠层的发光装置。 在第一导电型半导体层上形成发光层。 在发光层上形成第二导电型半导体层。 第二导电类型半导体层的上表面是纹理表面。 在第二导电型半导体层的第一部分上形成平坦化层。 透明导电氧化物层形成在平坦化层和第二导电类型半导体层的第二部分上，包括平坦化层上的第一部分和在第二导电类型半导体层上具有第一多个空腔的第二部分。 在透明导电氧化物层的第一部分上形成电极，并且在透明导电氧化物层和电极之间形成反射金属层。

    LIGHT-EMITTING DEVICE
    4.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20150137167A1

    公开(公告)日：2015-05-21

    申请号：US14589683

    申请日：2015-01-05

    Applicant: Epistar Corporation

    Inventor： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

    IPC: H01L33/24 ,  H01L33/46 ,  H01L33/60

    CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

    Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

    Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电类型半导体层的第一部分上的第一平坦化层; 第一透明导电氧化物层，其形成在所述第一平坦化层上和所述第二导电类型半导体层的第二部分上，所述第一透明导电氧化物层包括与所述第一平坦化层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。

    Light-emitting device with high light extraction
    5.
    发明授权
    Light-emitting device with high light extraction 有权
    具有高光提取功能的发光装置

    公开(公告)号：US09530940B2

    公开(公告)日：2016-12-27

    申请号：US14589683

    申请日：2015-01-05

    Applicant: EPISTAR CORPORATION

    Inventor： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

    IPC: H01L33/42 ,  H01L33/22 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40

    CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

    Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

    Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电类型半导体层的第一部分上的第一平坦化层; 第一透明导电氧化物层，其形成在所述第一平坦化层上和所述第二导电类型半导体层的第二部分上，所述第一透明导电氧化物层包括与所述第一平坦化层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。

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