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公开(公告)号:US20190165206A1
公开(公告)日:2019-05-30
申请号:US16247802
申请日:2019-01-15
Applicant: EPISTAR CORPORATION
Inventor: Chih-Hao CHEN , Yi-Lun CHOU , Wei-Chih PENG
CPC classification number: H01L33/0075 , H01L33/007 , H01L33/0079 , H01L33/10 , H01L2933/0016
Abstract: The present disclosure provides a semiconductor device including a carrier; a current blocking layer, formed on the carrier; a function structure, formed on the current blocking layer and comprising a surface opposite to the current blocking layer; a protective structure, formed on the function structure and exposing a portion of the surface; and an electrode, formed on the protective structure and exposing the portion of the surface.
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12.
公开(公告)号:US20140367693A1
公开(公告)日:2014-12-18
申请号:US14282927
申请日:2014-05-20
Applicant: Epistar Corporation
Inventor: Wei-Chih PENG , Jhih-Jheng YANG , Victor LIU , Hong-Yi LEI , Min Hsun HSIEH
IPC: H01L33/60 , H01L21/265 , H01L33/00
CPC classification number: H01L33/22 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/60 , H01L2933/0058 , H01L2933/0091
Abstract: A light-emitting device, comprising: a substrate comprising an upper surface; an ion implantation region in the substrate; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and multiple cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.
Abstract translation: 1.一种发光装置,包括:包括上表面的基板; 衬底中的离子注入区; 形成在上表面上的半导体层; 形成在所述半导体层上的发光叠层; 以及根据离子注入区域在半导体层和上表面之间形成的多个空腔。
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13.
公开(公告)号:US20130134457A1
公开(公告)日:2013-05-30
申请号:US13731919
申请日:2012-12-31
Applicant: Epistar Corporation
Inventor: Wei-Chih PENG , Ta-Cheng HSU , Yu-Jiun SHEN , Ching-Fu TSAI
IPC: H01L33/60
CPC classification number: H01L33/60 , H01L31/056 , H01L33/007 , H01L33/10 , H01L33/12 , H01L51/5268 , H01L51/5271 , H01L51/5275
Abstract: An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.
Abstract translation: 一种光电子器件,包括:衬底和形成在衬底上的第一过渡堆叠,包括形成在衬底上的第一过渡层,其具有形成在第一过渡层内部的中空部件,形成在第一过渡层上的第二过渡层,以及反射器 杆形成在第二过渡层内。
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