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    MEASUREMENT APPARATUS FOR GAS SENSOR
    1.
    发明申请
    MEASUREMENT APPARATUS FOR GAS SENSOR 有权

    公开(公告)号：US20210278382A1

    公开(公告)日：2021-09-09

    申请号：US16836781

    申请日：2020-03-31

    Applicant: EPISTAR CORPORATION

    Inventor： Wei-Chih PENG

    IPC: G01N33/00 ,  G01R31/28 ,  G01R1/04

    Abstract: A measurement apparatus for gas sensor includes a wafer-holding module and a vacuuming module. The wafer-holding module includes a holding carrier configured to hold a wafer. The holding carrier includes an uppermost surface, a bottommost surface, an outermost side surface between the uppermost surface and the bottommost surface, a plurality of grooves, and a plurality of through holes. The vacuuming module couples to the plurality of through holes and is configured to generate a negative pressure to attach the gas-sensing cell to the holding carrier. The wafer includes at least one uncut gas-sensing cell. At least one gas-sensing cell has a cavity located right above at least one of the grooves. The grooves extend downwardly from the uppermost surface and not reaching the bottommost surface. The grooves extend outwardly in a horizontal direction to expose out of the outermost side surface.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250112443A1

    公开(公告)日：2025-04-03

    申请号：US18899846

    申请日：2024-09-27

    Applicant: Epistar Corporation

    Inventor： Po-Chou PAN ,  Chen OU ,  Shih-Chang LEE ,  Wei-Chih PENG ,  Yao-Ru CHANG ,  Hao-Chun LIANG

    IPC: H01S5/11 ,  H01S5/042

    Abstract: An embodiment of the present disclosure provides a semiconductor device. The semiconductor device has a first semiconductor structure; a second semiconductor structure on the first semiconductor structure and having a first aluminum content; a plurality of voids in the second semiconductor structure; an active structure between the first semiconductor structure and the second semiconductor structure; and a third semiconductor structure between the active structure and the second semiconductor structure, and having a second aluminum content. The first aluminum content is greater than the second aluminum content.

    METHOD OF FORMING A LIGHT-EMITTING DEVICE
    7.
    发明申请
    METHOD OF FORMING A LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20180374985A1

    公开(公告)日：2018-12-27

    申请号：US15630660

    申请日：2017-06-22

    Applicant: EPISTAR CORPORATION

    Inventor： Chih-hao CHEN ,  Yi-Lun CHOU ,  Wei-Chih PENG

    IPC: H01L33/00 ,  H01L33/10

    Abstract: The present disclosure provides a method of forming a light-emitting device comprising: providing a growth substrate having a front side and a rear side; forming a sacrificial layer on the front side of the growth substrate; forming a protective structure on the sacrificial layer; forming a light-emitting structure on the protective structure, wherein the light-emitting structure emits a first peak wavelength; providing a carrier; joining the carrier and the light-emitting structure; and transforming the sacrificial layer by irradiating a laser beam from the rear side to separate the growth substrate from the light-emitting structure, wherein the laser beam emits a second peak wavelength, and wherein the protective structure reflects the second peak wavelength away from the light-emitting structure.

    LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF
    8.
    发明申请
    LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF 审中-公开
    发光装置及其制造方法

    公开(公告)号：US20160204310A1

    公开(公告)日：2016-07-14

    申请号：US15078761

    申请日：2016-03-23

    Applicant: EPISTAR CORPORATION

    Inventor： Wei-Chih PENG ,  Jhih-Jheng YANG ,  Victor LIU ,  Hong-Yi LEI ,  Min Hsun HSIEH

    IPC: H01L33/22 ,  H01L33/00

    CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/60 ,  H01L2933/0058 ,  H01L2933/0091

    Abstract: A method of manufacturing a light-emitting device comprises the steps of: providing a substrate; forming a mask block contacting the substrate and exposing a portion of the substrate; implanting an ion into the portion of the substrate to form an ion implantation region; and forming a semiconductor stack on the substrate such that multiple cavities are formed between the semiconductor stack and the ion implantation region; wherein the mask block comprises a material made of metal or oxide.

    Abstract translation: 一种制造发光器件的方法包括以下步骤：提供衬底; 形成与衬底接触并暴露衬底的一部分的掩模块; 将离子注入到所述衬底的所述部分中以形成离子注入区域; 以及在所述基板上形成半导体堆叠，使得在所述半导体堆叠和所述离子注入区域之间形成多个空腔; 其中所述掩模块包括由金属或氧化物制成的材料。

    GAS SENSOR AND PACKAGING COMPONENT HAVING THE SAME
    10.
    发明申请
    GAS SENSOR AND PACKAGING COMPONENT HAVING THE SAME 有权

    公开(公告)号：US20210199610A1

    公开(公告)日：2021-07-01

    申请号：US16836779

    申请日：2020-03-31

    Applicant: EPISTAR CORPORATION

    Inventor： Wei-Chih PENG

    IPC: G01N27/12 ,  G01N33/00

    Abstract: A gas sensor includes a substrate, an oxidization stack, a heating element, a sensing circuit, and a gas sensing element. The substrate has a first surface, a second surface opposite to the first surface, and a groove. The oxidization stack is on the substrate, and has a third surface and a fourth surface opposite to the third surface. The heating element is embedded in the oxidization stack. The sensing circuit is embedded in the oxidization stack. A distance between the sensing circuit and the fourth surface is shorter than a distance between the heating element and the fourth surface. The gas sensing element is located on the oxidization stack and coupled to the sensing circuit. The substrate and the oxidization stack collectively define a cavity substantially underneath the gas sensing element. The groove penetrates the substrate and extends outwardly from the cavity.

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