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公开(公告)号：US20210273137A1
公开(公告)日：2021-09-02
申请号：US17321078
申请日：2021-05-14
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device;
and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.-
公开(公告)号：US20230197904A1
公开(公告)日：2023-06-22
申请号：US18113344
申请日：2023-02-23
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
CPC classification number: H01L33/385 , H01L33/10 , H01L33/0075 , H01L33/32 , H01L33/46 , H01L33/24 , H01L25/0753 , H01L33/36
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
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公开(公告)号：US20190165206A1
公开(公告)日：2019-05-30
申请号：US16247802
申请日：2019-01-15
Applicant: EPISTAR CORPORATION
Inventor： Chih-Hao CHEN , Yi-Lun CHOU , Wei-Chih PENG
CPC classification number: H01L33/0075 , H01L33/007 , H01L33/0079 , H01L33/10 , H01L2933/0016
Abstract: The present disclosure provides a semiconductor device including a carrier; a current blocking layer, formed on the carrier; a function structure, formed on the current blocking layer and comprising a surface opposite to the current blocking layer; a protective structure, formed on the function structure and exposing a portion of the surface; and an electrode, formed on the protective structure and exposing the portion of the surface.
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公开(公告)号：US20190019919A1
公开(公告)日：2019-01-17
申请号：US16035299
申请日：2018-07-13
Applicant: EPISTAR CORPORATION
Inventor： Aurelien GAUTHIER-BRUN , Chao-Hsing CHEN , Chang-Tai HSAIO , Chih-Hao CHEN , Chi-Shiang HSU , Jia-Kuen WANG , Yung-Hsiang LIN
CPC classification number: H01L33/387 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46
Abstract: A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.
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公开(公告)号：US20140299901A1
公开(公告)日：2014-10-09
申请号：US13858504
申请日：2013-04-08
Applicant: EPISTAR CORPORATION
Inventor： Liang-Sheng CHI , Pei-Chia CHEN , Chih-Hao CHEN
CPC classification number: H01L33/22 , H01L27/153 , H01L33/005 , H01L33/0095 , H01L33/46 , H01L2933/0025 , H01L2933/0033
Abstract: A light-emitting diode, comprising: a substrate, the substrate comprising an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the upper surface, wherein the first type semiconductor layer comprises a first portion and a second portion, and the second portion comprises an edge surrounding the first portion; a light-emitting layer on the first portion; and a second type semiconductor layer on the light-emitting layer, wherein the second portion comprising a first surface and a second surface, and a first distance is between the first surface and the upper surface, and a second distance is between the second surface and the upper surface and is smaller than the first distance; wherein the first surface is rougher than the second surface, and the second surface is located at the edge.
Abstract translation: 一种发光二极管，包括：基板，所述基板包括上表面，与所述上表面相对的底表面和侧表面; 在上表面上的第一类型半导体层，其中所述第一类型半导体层包括第一部分和第二部分，并且所述第二部分包括围绕所述第一部分的边缘; 在第一部分上的发光层; 和在发光层上的第二类型半导体层，其中第二部分包括第一表面和第二表面，第一距离在第一表面和上表面之间，第二距离在第二表面和第二表面之间 上表面小于第一距离; 其中所述第一表面比所述第二表面更粗糙，并且所述第二表面位于所述边缘处。
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Patent Agency Ranking
公开(公告)号：US20240250210A1
公开(公告)日：2024-07-25
申请号：US18416277
申请日：2024-01-18
Applicant: EPISTAR CORPORATION
Inventor： Chia-Che LIAO , Chih-Hao CHEN , Wei-Che WU , Sheng-Hao WU , Siou-Huei YANG
Abstract: A light-emitting device includes a substrate comprising an upper surface, a plurality of side surfaces, and a semiconductor stack located on the upper surface. The substrate includes a hexagonal crystal structure. The plurality of side surfaces includes a first side surface. The first side surface is tilted away from a m-plane of the hexagonal crystal structure, and an acute angle is formed between the first side surface and the m-plane. The first side surface includes a first modified stripe, and the first modified stripe includes a plurality of first modified regions. A pitch is between the adjacent first modified regions, and the pitch is not less than 5 μm. The first side surface comprises a folded structure.
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公开(公告)号：US20240014352A1
公开(公告)日：2024-01-11
申请号：US18370649
申请日：2023-09-20
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
CPC classification number: H01L33/385 , H01L33/10 , H01L33/0075 , H01L33/32 , H01L33/46 , H01L33/24 , H01L25/0753 , H01L33/36
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
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公开(公告)号：US20210343913A1
公开(公告)日：2021-11-04
申请号：US17306141
申请日：2021-05-03
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Chih-Hao CHEN , Chien-Chih LIAO , Chao-Hsing CHEN , Wu-Tsung LO , Tsun-Kai KO , Chen OU
Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.
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公开(公告)号：US20190229236A1
公开(公告)日：2019-07-25
申请号：US16249646
申请日：2019-01-16
Applicant: EPISTAR CORPORATION
Inventor： Yi-Lun CHOU , Chih-Hao CHEN
Abstract: A light-emitting element, includes a substrate; and a semiconductor stack formed on the substrate, including: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type; and a light-emitting stack formed between the first and second semiconductor layers; wherein in a cross-sectional view, an inner region of the first semiconductor layer includes a first region with a first thickness, and an edge of the first semiconductor layer includes a second region with a second thickness larger than the first thickness.
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公开(公告)号：US20240162382A1
公开(公告)日：2024-05-16
申请号：US18506698
申请日：2023-11-10
Applicant: EPISTAR CORPORATION
Inventor： Wu-Tsung LO , Chih-Hao CHEN , Wei-Che WU , Heng-Ying CHO , Tsun-Kai KO
Abstract: The present disclosure provides a light-emitting package. The light-emitting package includes a main body, a cavity disposed in the cavity, a base plane in the cavity and a light-emitting element. The light-emitting element is disposed in the cavity and connected to the base plane. The light-emitting element includes a substrate and a semiconductor stack on the substrate. The substrate includes a side wall, and the side wall incudes a first cutting trace. The main body includes a step portion disposed in the cavity and it surrounds the light-emitting element. The step portion comprises a first height relative to base plane, and the first cutting trace comprises a second height relative to the base plane. The second height is greater than the first height.
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