Abstract:
A high voltage gas switch includes a gas-tight housing containing an ionizable gas at a preselected gas pressure. The gas switch includes a gas-tight housing containing an ionizable gas at a gas pressure selected based upon a Paschen curve for the ionizable gas, where the Paschen curve plots breakdown voltages of the ionizable gas as a function of gas pressure multiplied by grid-to-anode distance, and where values of gas pressure multiplied by grid-to-anode distance increase over at least a portion of the Paschen curve in conjunction with increasing breakdown voltages. The gas switch also includes an anode disposed within the gas-tight housing, a cathode disposed within the gas-tight housing, and a control grid positioned between the anode and the cathode, where the control grid is spaced apart from the anode by a grid-to-anode distance selected based upon a desired operating voltage.
Abstract:
A power converter including at least one switching device is presented. The power converter is configured to convert an input parameter to an output parameter by periodically activating and deactivating the switching device. The switching device includes: (i) a chamber including an ionizable gas; (ii) a cathode and an anode defining a discharge gap disposed in the chamber; (iii) a magnet assembly configured to generate a first magnetic field such that a plasma is maintained in the discharge gap; and (iv) an electromagnet configured to generate, in response to a deactivation signal, a second magnetic field such that at least a portion of the plasma in the discharge gap is disrupted to deactivate the switching device. A method of power conversion and a switching device are also presented.
Abstract:
According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.
Abstract:
A DC circuit breaker includes a gas discharge tube (GDT) coupled in parallel with an extinguishing path. The GDT conducts and interrupts a load current through a normal current path. The GDT includes a thermionic cathode, an anode, and a control grid. The control grid is configured to regulate opening and closing of the normal current path. The extinguishing path is configured to lengthen a break time for the DC circuit breaker.
Abstract:
A DC circuit breaker includes a gas discharge tube (GDT) coupled in parallel with an extinguishing path. The GDT conducts and interrupts a load current through a normal current path. The GDT includes a thermionic cathode, an anode, and a control grid. The control grid is configured to regulate opening and closing of the normal current path. The extinguishing path is configured to lengthen a break time for the DC circuit breaker.
Abstract:
A bidirectional gas discharge tube (GDT) includes a discharge chamber, first and second cathodes, a gas disposed within the discharge chamber, and a control grid. The first and second cathodes are disposed within the discharge chamber and include first and second faces, respectively. The first face and the second face are plane-parallel. The gas is configured to insulate the first cathode from the second cathode. The control grid is disposed between the first and second cathodes within the discharge chamber. The control grid is configured to generate an electric field to initiate establishment of a conductive plasma between the first and second cathodes to close a conduction path extending between the first and second cathodes.
Abstract:
A cold-cathode switching device is presented. The cold-cathode switching device includes a housing defining a chamber; an ionizable gas disposed in the chamber; and a plurality of electrodes disposed in the chamber. The plurality of electrodes includes a cathode and an anode defining a discharge gap, and wherein at least one of the cathode and anode comprises a material that is liquid at an operating temperature of the cathode or the anode.
Abstract:
A high voltage gas switch includes a gas-tight housing containing an ionizable gas at a preselected gas pressure. The gas switch includes a gas-tight housing containing an ionizable gas at a gas pressure selected based upon a Paschen curve for the ionizable gas, where the Paschen curve plots breakdown voltages of the ionizable gas as a function of gas pressure multiplied by grid-to-anode distance, and where values of gas pressure multiplied by grid-to-anode distance increase over at least a portion of the Paschen curve in conjunction with increasing breakdown voltages. The gas switch also includes an anode disposed within the gas-tight housing, a cathode disposed within the gas-tight housing, and a control grid positioned between the anode and the cathode, where the control grid is spaced apart from the anode by a grid-to-anode distance selected based upon a desired operating voltage.
Abstract:
A gas switch includes an anode and a cathode spaced apart from the anode, wherein the cathode includes a conduction surface. The gas switch also includes a plurality of magnets arranged to generate a magnetic field that defines an annular path over a portion of the conduction surface at a radial distance from a switch axis, and a control grid positioned between the anode and the cathode. In operation, the control grid is arranged to establish a conducting plasma between the anode and the cathode, wherein, in the presence of the conducting plasma, a voltage drop between the anode and the cathode is less than 150 volts, and wherein the conducting plasma forms a cathode spot that circles the annular path.
Abstract:
A system for regulating a pressure of a filled-in gas is presented. The system includes a reservoir that stores a reservoir gas adsorbed in a sorbent material at a storage temperature, a gas-filled tube containing the filled-in gas, a controller configured to determine a pressure change required in the filled-in gas based upon signals representative of a pressure of the filled-in gas inside the gas-filled tube and a required pressure threshold, determine an updated temperature of the sorbent material based upon the pressure change required in the filled-in gas, and regulate the pressure of the filled-in gas by controlling the reservoir to change the storage temperature of the sorbent material to reach the updated temperature of the sorbent material.