公开(公告)号：US11881395B2

公开(公告)日：2024-01-23

申请号：US17644939

申请日：2021-12-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Judson R. Holt ,  Hong Yu ,  Alexander M. Derrickson

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/6625

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor on a semiconductor fin and methods to form the same. A bipolar transistor structure according to the disclosure may include a doped semiconductor layer coupled to a base contact. A first semiconductor fin on the doped semiconductor layer may have a first doping type. An emitter/collector (E/C) material may be on a sidewall of an upper portion of the first semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.

公开(公告)号：US20230062013A1

公开(公告)日：2023-03-02

申请号：US17644939

申请日：2021-12-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Judson R. Holt ,  Hong Yu ,  Alexander M. Derrickson

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor on a semiconductor fin and methods to form the same. A bipolar transistor structure according to the disclosure may include a doped semiconductor layer coupled to a base contact. A first semiconductor fin on the doped semiconductor layer may have a first doping type. An emitter/collector (E/C) material may be on a sidewall of an upper portion of the first semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.

公开(公告)号：US11588044B2

公开(公告)日：2023-02-21

申请号：US17109464

申请日：2020-12-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Alexander M. Derrickson ,  Mankyu Yang ,  Richard F. Taylor, III ,  Jagar Singh ,  Alexander L. Martin

IPC: H01L29/739 ,  H03K17/60 ,  H01L29/10 ,  H01L29/06

Abstract: Embodiments of the disclosure provide a bipolar junction transistor (BJT) structure and related method. A BJT according to the disclosure may include a base over a semiconductor substrate. A collector is over the semiconductor substrate and laterally abuts a first horizontal end of the base. An emitter is over the semiconductor substrate and laterally abuts a second horizontal end of the base opposite the first horizontal end. A horizontal interface between the emitter and the base is smaller than a horizontal interface between the collector and the base.

公开(公告)号：US20220173230A1

公开(公告)日：2022-06-02

申请号：US17109464

申请日：2020-12-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Alexander M. Derrickson ,  Mankyu Yang ,  Richard F. Taylor, III ,  Jagar Singh ,  Alexander L. Martin

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H03K17/60

Abstract: Embodiments of the disclosure provide a bipolar junction transistor (BJT) structure and related method. A BJT according to the disclosure may include a base over a semiconductor substrate. A collector is over the semiconductor substrate and laterally abuts a first horizontal end of the base. An emitter is over the semiconductor substrate and laterally abuts a second horizontal end of the base opposite the first horizontal end. A horizontal interface between the emitter and the base is smaller than a horizontal interface between the collector and the base.

公开(公告)号：US20240250158A1

公开(公告)日：2024-07-25

申请号：US18438882

申请日：2024-02-12

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson R. Holt ,  Vibhor Jain ,  Alexander M. Derrickson

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7393 ,  H01L29/0649 ,  H01L29/66325

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region; an emitter region on a first side of the extrinsic base region; a collector region on a second side of the extrinsic base region; and a gate structure comprising a gate oxide and a gate control in a same channel region as the extrinsic base region.

公开(公告)号：US11804542B2

公开(公告)日：2023-10-31

申请号：US17557176

申请日：2021-12-21

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Alexander M. Derrickson ,  Arkadiusz Malinowski ,  Jagar Singh ,  Mankyu Yang ,  Judson R. Holt

IPC: H01L29/737 ,  H01L29/165 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L29/7371 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/165 ,  H01L29/66242

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to annular bipolar transistors and methods of manufacture. The structure includes: a substate material; a collector region parallel to and above the substrate material; an intrinsic base region surrounding the collector region; an emitter region above the intrinsic base region; and an extrinsic base region contacting the intrinsic base region.

公开(公告)号：US20230290829A1

公开(公告)日：2023-09-14

申请号：US17804201

申请日：2022-05-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Peter Baars ,  Alexander M. Derrickson ,  Ketankumar Harishbhai Tailor ,  Zhixing Zhao ,  Judson R. Holt

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/735

CPC classification number: H01L29/1004 ,  H01L29/66234 ,  H01L29/735

Abstract: Embodiments of the disclosure provide a bipolar transistor structure having a base with a varying horizontal width and methods to form the same. The bipolar transistor structure includes a first emitter/collector (E/C) layer on an insulator layer. A base layer is over the insulator layer. A spacer between the first E/C layer and the base layer. The base layer includes a lower base region, and the spacer is adjacent to the lower base region and the first E/C layer. An upper base region is on the lower base region and the spacer. A horizontal width of the upper base region is larger than a horizontal width of the lower base region.

公开(公告)号：US20230223462A1

公开(公告)日：2023-07-13

申请号：US17657154

申请日：2022-03-30

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong Yu ,  Alexander M. Derrickson ,  Judson R. Holt

IPC: H01L29/73 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/73 ,  H01L29/66234 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1095 ,  H01L29/0653

Abstract: Embodiments of the disclosure provide a bipolar transistor structure including a semiconductor fin on a substrate. The semiconductor fin has a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. A first emitter/collector (E/C) material is adjacent a first sidewall of the semiconductor fin along the width of the semiconductor fin. The first E/C material has a second doping type opposite the first doping type. A second E/C material is adjacent a second sidewall of the semiconductor fin along the width of the semiconductor fin. The second E/C material has the second doping type. A width of the first E/C material is different from a width of the second E/C material.

公开(公告)号：US20230075949A1

公开(公告)日：2023-03-09

申请号：US17550835

申请日：2021-12-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jagar Singh ,  Alexander M. Derrickson ,  Alexander Martin

IPC: H01L29/735 ,  H01L29/423 ,  H01L29/45 ,  H01L29/10 ,  H01L29/08

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region composed of semiconductor material; an emitter region on a first side of the extrinsic base region; a collector region on a second side of the extrinsic base region; and an extrinsic base contact wrapping around the semiconductor material of the extrinsic base region.

公开(公告)号：US20230064512A1

公开(公告)日：2023-03-02

申请号：US17456395

申请日：2021-11-24

Applicant: GlobalFoundries U.S. Inc.

Inventor： Vibhor Jain ,  John J. Pekarik ,  Alvin J. Joseph ,  Alexander M. Derrickson ,  Judson R. Holt

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/15 ,  H01L29/10 ,  H01L29/66

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor structure with a superlattice layer and methods to form the same. The bipolar transistor structure may have a semiconductor layer of a first single crystal semiconductor material over an insulator layer. The semiconductor layer includes an intrinsic base region having a first doping type. An emitter/collector (E/C) region may be adjacent the intrinsic base region and may have a second doping type opposite the first doping type. A superlattice layer is on the E/C region of the semiconductor layer. A raised E/C terminal, including a single crystal semiconductor material, is on the superlattice layer. The superlattice layer separates the E/C region from the raised E/C terminal.