公开(公告)号：US12107154B2

公开(公告)日：2024-10-01

申请号：US18324489

申请日：2023-05-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Haiting Wang ,  Hong Yu ,  Zhenyu Hu

IPC: H01L29/66 ,  H01L21/285 ,  H01L21/762 ,  H01L29/06 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78

CPC classification number: H01L29/6681 ,  H01L21/28518 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/7851

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to single fin structures and methods of manufacture. The structure includes: an active single fin structure; a plurality of dummy fin structures on opposing sides of the active single fin structure; source and drain regions formed on the active single fin structure and the dummy fin structures; recessed shallow trench isolation (STI) regions between the dummy fin structures and the active single fin structure and below a surface of the dummy fin structures; and contacts formed on the source and drain regions of the active single fin structure with a spacing of at least two dummy fin structures on opposing sides of the contacts.

公开(公告)号：US20240313113A1

公开(公告)日：2024-09-19

申请号：US18182926

申请日：2023-03-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Anton V. Tokranov ,  James P. Mazza ,  Eric Scott Kozarsky ,  Elizabeth A. Strehlow ,  Vitor A. Vulcano Rossi ,  Hong Yu

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/66

CPC classification number: H01L29/7846 ,  H01L21/76229 ,  H01L29/66795 ,  H01L29/7851

Abstract: Disclosed is a semiconductor structure and method of forming the semiconductor structure. Specifically, the semiconductor structure can include a first semiconductor fin extending from a semiconductor substrate. The semiconductor structure can further include an isolation region on the semiconductor substrate adjacent to a lower portion of the first semiconductor fin. The first semiconductor fin can, for example, be incorporated into a single-fin fin-type semiconductor device, such as a single-fin fin-type field effect transistor (FINFET). The isolation region can include at least one shallow trench isolation (STI) structure positioned laterally between and immediately adjacent to sections of a deep trench isolation (DTI) structure. With this alternating DTI-STI-DTI configuration, overall shrinkage of isolation material of the isolation region during anneals is reduced and, thus, so are stress-induced crystalline defects in the first semiconductor fin. Also disclosed are methods for forming such a semiconductor structure.

公开(公告)号：US20240170560A1

公开(公告)日：2024-05-23

申请号：US17990898

申请日：2022-11-21

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander Derrickson ,  Venkatesh Gopinath ,  John J. Pekarik ,  Hong Yu ,  Vibhor Jain ,  David Pritchard

IPC: H01L29/735 ,  H01L27/06 ,  H01L29/66 ,  H01L29/732

CPC classification number: H01L29/735 ,  H01L27/0623 ,  H01L29/66871 ,  H01L29/732

Abstract: Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a semiconductor layer, a substrate, and a dielectric layer disposed between the semiconductor layer and the substrate. The structure further comprises a first bipolar junction transistor including a first collector in the substrate, a first emitter, and a first base layer. The first base layer extends through the dielectric layer from the first emitter to the first collector. The structure further comprises a second bipolar junction transistor including a second collector in the substrate, a second emitter, and a second base layer. The second base layer extends through the dielectric layer from the second emitter to the second collector. The second base layer is connected to the first base layer by a section of the semiconductor layer to define a base line.

公开(公告)号：US11967636B2

公开(公告)日：2024-04-23

申请号：US17680434

申请日：2022-02-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Hong Yu

IPC: H01L27/082 ,  H01L27/102 ,  H01L29/06 ,  H01L29/66 ,  H01L29/70 ,  H01L29/735

CPC classification number: H01L29/735 ,  H01L29/0649 ,  H01L29/6625

Abstract: Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer, a second terminal having a second raised semiconductor layer, and a base layer positioned laterally between the first raised semiconductor layer and the second raised semiconductor layer. The structure further includes a spacer positioned laterally positioned between the first raised semiconductor layer and the base layer. The spacer includes a dielectric material and an airgap surrounded by the dielectric material.

公开(公告)号：US11942534B2

公开(公告)日：2024-03-26

申请号：US17745178

申请日：2022-05-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hong Yu ,  Judson R. Holt ,  Vibhor Jain

IPC: H01L29/737 ,  H01L23/373 ,  H01L29/66

CPC classification number: H01L29/737 ,  H01L23/3738 ,  H01L29/66242

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with thermal conductor and methods of manufacture. The structure includes: a base formed within a semiconductor substrate; a thermal conductive material under the base and extending to an underlying semiconductor material; an emitter on a first side of the base; and a collector on a second side of the base.

公开(公告)号：US11881395B2

公开(公告)日：2024-01-23

申请号：US17644939

申请日：2021-12-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Judson R. Holt ,  Hong Yu ,  Alexander M. Derrickson

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/6625

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor on a semiconductor fin and methods to form the same. A bipolar transistor structure according to the disclosure may include a doped semiconductor layer coupled to a base contact. A first semiconductor fin on the doped semiconductor layer may have a first doping type. An emitter/collector (E/C) material may be on a sidewall of an upper portion of the first semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.

公开(公告)号：US20230326924A1

公开(公告)日：2023-10-12

申请号：US17658914

申请日：2022-04-12

Applicant: GlobalFoundries U.S. Inc.

Inventor： Anton V. Tokranov ,  Hong Yu ,  Edward P. Reis, JR.

IPC: H01L27/088 ,  H01L29/423 ,  H01L21/8234

CPC classification number: H01L27/088 ,  H01L29/42364 ,  H01L21/823462

Abstract: A structure and method of forming different high dielectric constant (high-K) gate dielectrics for different transistors on the same substrate, are disclosed. A first region includes a first transistor(s) on the substrate having a first gate structure having a first gate body over a first high-K gate dielectric. The first gate body and the first high-K gate dielectric have different widths defining a first width difference. A second region includes a second transistor(s) on the substrate having a second gate structure having a second gate body over a second high-K gate dielectric. The second gate body and the second high-K gate dielectric have different widths defining a second width difference. The first width difference is different than the second width difference, i.e., amongst transistors in the different regions. The different gate dielectric widths improve control of overlap capacitance of the transistors without increasing dopants or an annealing temperature.

公开(公告)号：US20230290868A1

公开(公告)日：2023-09-14

申请号：US17745178

申请日：2022-05-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hong Yu ,  Judson R. Holt ,  Vibhor Jain

IPC: H01L29/737 ,  H01L29/66 ,  H01L23/373

CPC classification number: H01L29/737 ,  H01L29/66242 ,  H01L23/3738

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with thermal conductor and methods of manufacture. The structure includes: a base formed within a semiconductor substrate; a thermal conductive material under the base and extending to an underlying semiconductor material; an emitter on a first side of the base; and a collector on a second side of the base.

公开(公告)号：US20230231040A1

公开(公告)日：2023-07-20

申请号：US17578011

申请日：2022-01-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong Yu ,  Vibhor Jain

IPC: H01L29/735 ,  H01L29/417 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/735 ,  H01L29/41708 ,  H01L29/6625 ,  H01L29/0808 ,  H01L29/0821

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor structure with an emitter/collector (E/C) contact to a doped semiconductor well and related methods. A bipolar transistor structure according to the disclosure may include a doped semiconductor well over a semiconductor substrate. An insulative region is on the doped semiconductor well. A base layer is on the insulative region, and an emitter/collector (E/C) layer on the insulative region and adjacent a first sidewall of the base layer. An E/C contact to the doped semiconductor well includes a lower portion adjacent the insulative region and an upper portion adjacent and electrically coupled to the E/C layer.

公开(公告)号：US20230143396A1

公开(公告)日：2023-05-11

申请号：US17684321

申请日：2022-03-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hong Yu ,  Vibhor Jain

IPC: H01L29/417 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/735 ,  H01L29/737

CPC classification number: H01L29/41708 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/66242 ,  H01L29/735 ,  H01L29/737 ,  H01L29/0808 ,  H01L29/0817

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a collector contact and methods of manufacture. The structure includes: a lateral bipolar transistor which includes an emitter, a base and a collector; an emitter contact to the emitter; a base contact to the base; and a collector contact to the collector and extending to an underlying substrate underneath the collector.