公开(公告)号：WO1995027375A1

公开(公告)日：1995-10-12

申请号：PCT/US1995004144

申请日：1995-04-04

Applicant: GTE LABORATORIES INCORPORATED

Inventor： GTE LABORATORIES INCORPORATED ,  LI, Weiping ,  WUS, John, P., III ,  ZHANG, Ya-Qin

IPC: H04N07/28

CPC classification number: G06T9/008 ,  H04N19/63 ,  H04N19/94

Abstract: An image compression scheme called vector subband coding (VSC) employs a vector-based operation in coding images. In VSC, an image is first decomposed into a set of vector subbands (VSBx) using a vector filter bank (VFB), and then vector quantization (VQ) is performed on each vector in all VSBs. The VFB not only reduces inter-vector and inter-band correlation, but also preserves intra-vector correlation. This property makes the subsequent VQ operation much more efficient and allows large coding gain over conventional subband coding.

Abstract translation: 称为矢量子带编码（VSC）的图像压缩方案在编码图像中采用基于向量的操作。 在VSC中，使用矢量滤波器组（VFB）首先将图像分解成一组矢量子带（VSBx），然后对所有VSB中的每个矢量进行矢量量化（VQ）。 VFB不仅减少了矢量间和带间的相关性，而且还保留了矢量内相关。 该属性使得随后的VQ操作更有效，并且允许比常规子带编码更大的编码增益。

公开(公告)号：WO1994011930A1

公开(公告)日：1994-05-26

申请号：PCT/US1993011091

申请日：1993-11-16

Applicant: GTE LABORATORIES INCORPORATED

Inventor： GTE LABORATORIES INCORPORATED ,  ROTHMAN, Mark, Alan ,  SHIEH, Chan-Long ,  ARMIENTO, Craig, Alfred ,  THOMPSON, John, Alvin ,  NEGRI, Alfred, Joseph

IPC: H01S03/025

CPC classification number: G02B6/4249 ,  G02B6/30 ,  G02B6/42 ,  H01S5/0203 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/4025

Abstract: A heterostructure device includes a ridge-waveguide laser (11) monolithically integrated with a ridge-waveguide rear facet monitor [RFM] (12). An integral V-groove etched directly into the device substrate (10) enables passive alignment of an optical fiber (13) to the active region (11-1) of the laser (11). The laser and RFM facets were formed using an in-situ multistep reactive ion etch process.

Abstract translation: 异质结构装置包括与脊 - 波导后小面监视器[RFM]（12）单片集成的脊 - 波导激光器（11）。 直接蚀刻到器件衬底（10）中的整体V形槽使得光纤（13）能够被激活地对准激光器（11）的有源区域（11-1）。 使用原位多步反应离子蚀刻工艺形成激光器和RFM刻面。

公开(公告)号：WO1993006512A1

公开(公告)日：1993-04-01

申请号：PCT/US1992007745

申请日：1992-09-11

Applicant: GTE LABORATORIES INCORPORATED

Inventor： GTE LABORATORIES INCORPORATED ,  CAMBRIELLO, John, A.

IPC: G02B06/26

CPC classification number: G02B6/4249 ,  G02B6/362 ,  G02B6/3652 ,  G02B6/3692 ,  G02B6/3839 ,  G02B6/4226 ,  G02B6/423

Abstract: A method and apparatus is disclosed for assembling an array of optical fibers (14) in a substrate (12). The method comprises forming a series of parallel V-shaped grooves (11) in the top surface of the substrate (12), placing the substrate (12) on a base plate (21) and positioning an upper plate (22) in spaced apart relationship with the substrate (12) so as to form channels (28) between the upper plate and the V-shaped grooves (11). A vacuum is then applied at one end of the channel (28) formed between the upper plate (22) and the V-shaped grooves (11), and optical fibers (14) are then sequentially fed into each of the V-shaped grooves (11) and are drawn into the grooves (11) to a stop at the other end (38) thereof. The fibers are then bonded to the substrate (12).

公开(公告)号：WO1993002495A1

公开(公告)日：1993-02-04

申请号：PCT/US1992006104

申请日：1992-07-22

Applicant: GTE LABORATORIES INCORPORATED

Inventor： GTE LABORATORIES INCORPORATED ,  ELMAN, Boris, S. ,  SHARFIN, Wayne, F.

IPC: H01S03/19

CPC classification number: H01S5/2231 ,  H01S5/209 ,  H01S5/32308

Abstract: A ridge-waveguide laser is fabricated by epitaxially growing a GaAs-based heterostructure, disposing an AlAs etch stop layer (14) on the heterostructure, disposing epitaxial layers on the etch stop layer (14), and etching the heterostructure to form the laser whereby the etch stop layer (14) prevents further etching into said heterostructure.

公开(公告)号：WO1992007102A1

公开(公告)日：1992-04-30

申请号：PCT/US1991007184

申请日：1991-09-30

Applicant: GTE LABORATORIES INCORPORATED

Inventor： GTE LABORATORIES INCORPORATED ,  BULJAN, Sergej, T. ,  LINGERTAT, Helmut ,  WAYNE, Steven, F.

IPC: C22C29/12

CPC classification number: C04B35/117 ,  C04B35/645 ,  C04B35/74 ,  C22C29/12 ,  Y10S75/95

Abstract: A dense cermet article (10) including about 44-93 % of a granular first hard phase (12), about 4-44 % of a granular second hard phase (14), and about 2-20 % of a metal phase (16), all expressed in % by volume. The first hard phase consists essentially of alumina and from 0 % to less than 5 % of one or more oxides selected from magnesia, zirconia, yttria, hafnia, and silica. The second hard phase consists essentially of a hard refractory carbide, nitride, or boride, or mixture or solid solution thereof. Preferred materials for inclusion in the second hard phase are titanium carbide, hafnium carbide, tantalum carbide, tantalum nitride, tungsten carbide, titanium diboride, and boron carbide. The metal phase consists essentially of a combination of nickel and aluminum having a ratio of nickel to aluminum of from about 85:15 to about 88:12, and 0-5 % of an additive selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, cobalt, boron, and/or carbon. The preferred metal phase is substantially of the Ni3Al ordered crystal structure.

公开(公告)号：WO1988000625A1

公开(公告)日：1988-01-28

申请号：PCT/US1987001650

申请日：1987-07-07

Applicant: GTE LABORATORIES INCORPORATED

Inventor： GTE LABORATORIES INCORPORATED ,  SHASTRY, Shambhu, K.

IPC: C30B25/02

CPC classification number: H01L21/02521 ,  C30B25/02 ,  C30B29/42 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02499 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658

Abstract: Method of MOVPE growing a compound semiconductor material, for example GaAs, on a substrate, for example Si. Sodium ions are first introduced onto the substrate surface as by immersing it in a cleaning solution containing sodium. A two-step MOVPE process is then employed to grow device quality single crystal compound semiconductor material on the surface of the substrate.

公开(公告)号：WO1985001474A1

公开(公告)日：1985-04-11

申请号：PCT/US1984001143

申请日：1984-07-19

Applicant: GTE LABORATORIES INCORPORATED

Inventor： GTE LABORATORIES INCORPORATED ,  SARIN, Vinod, K. ,  BULJAN, Sergej-Tomislav

IPC: B34D11/00

CPC classification number: C04B41/009 ,  B23B27/148 ,  C04B35/584 ,  C04B41/5053 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B41/4529 ,  C04B41/455

Abstract: Cutting tools and cutting tool inserts having improved mechanical and chemical wear resistance under demanding conditions of machining speed, temperature, or workpiece hardness comprise a composite silicon nitride substrate having at least one intermediate hard adherent coating layer of a refractory material and an outer adherent coating layer. The intermediate adherent coating layer has a different chemical composition than the outer adherent coating layer. The composite silicon nitride substrate body consists essentially of particles of a refractory material uniformly distributed in a matrix consisting essentially of a first phase of silicon nitride and a refractory second phase comprising silicon nitride and an effective amount of a densification aid selected from the group consisting of yttrium oxide, hafnium oxide, the lanthanide rare earth oxides, and mixtures thereof.

公开(公告)号：WO1997024759A1

公开(公告)日：1997-07-10

申请号：PCT/US1996020847

申请日：1996-12-27

Applicant: GTE LABORATORIES INCORPORATED

Inventor： GTE LABORATORIES INCORPORATED ,  SARGENT, Richard, H.

IPC: H01L21/58

CPC classification number: B23K20/028 ,  B23K2101/40

Abstract: A device placement or diebonding head (2) including a rod-and-piston combination including gas pressure applying inlet above (21) or below (17) the piston (4) and gas pressure opposing source, e.g., an independent gas pressure source or springs (20, 20a), to control vertical movement of the vacuum tool (6). Force exerted by the vacuum tool (6) on the device (8) being diebonded to substrate (9) is adjustable by adjusting the gas pressure on the piston (4) relative to the force of the pressure resisting source, e.g., springs (20, 20a). As the device (8) is bonded, a pressure sensure (29) may control a system to relieve the pressure exerted by the piston (4) on the device due to thermal expansion.

Abstract translation: 包括杆和活塞组合的装置放置或模头粘合头（2），包括在活塞（4）上方（21）或下方（17）上方的气体压力施加入口和气体压力相对的源，例如独立气体压力源或 弹簧（20,20a），以控制真空工具（6）的垂直运动。 由真空工具（6）施加在与基材（9）粘合的装置（8）上的力可通过相对于耐压源（例如弹簧（20））的力调节活塞（4）上的气体压力来调节 ，20a）。 当装置（8）被接合时，压力感觉（29）可以控制系统以减轻由于热膨胀而对装置施加的活塞（4）施加的压力。

公开(公告)号：WO1995017790A1

公开(公告)日：1995-06-29

申请号：PCT/US1994014851

申请日：1994-12-22

Applicant: GTE LABORATORIES INCORPORATED

Inventor： GTE LABORATORIES INCORPORATED ,  WATTS, Ronald, F.

IPC: H04M01/64

CPC classification number: H04M3/48 ,  H04M3/428 ,  H04M3/487 ,  H04M7/00 ,  H04Q2213/13546

Abstract: Apparatus and a method of implementing a notification and hold service in a telephone network (50) is disclosed. A calling telecommunications device is placed on hold by the called telecommunications device (10, 12, 14, 16, 18, 20), and signals an auxiliary computer system (42) through a network switch that the calling telecommunications device (10, 12, 14, 16, 18, 20) is to be disconnected from the called telecommunications device (10, 12, 14, 16, 18, 20). The calling telecommunications device (10, 12, 14, 16, 18, 20) is notified at a later time that the called telecommunications device (10, 12, 14, 16, 18, 20) is no longer on hold. In another embodiment of the invention, the calling telecommunications device (10, 12, 14, 16, 18, 20) is connected to customer premise equipment which notifies that calling telecommunications device (10, 12, 14, 16, 18, 20) that the called telecommunications device (10, 12, 14, 16, 18, 20) is no longer on hold.

Abstract translation: 公开了一种在电话网络（50）中实现通知和保持服务的装置和方法。 呼叫电信设备被被叫电信设备（10,12,14,16,18,20）置于保持状态，并且通过网络交换机向辅助计算机系统（42）发信号，呼叫电信设备（10,12， 14,16,18,20）与被叫电信设备（10,12,14,16,18,20）断开连接。 呼叫电信设备（10,12,14,16,18,20）在稍后被通知被叫电信设备（10,12,14,16,18,20）不再处于保持状态。 在本发明的另一个实施例中，呼叫电信设备（10,12,14,16,18,20）被连接到客户驻地设备，其向呼叫电信设备（10,12,14,16,18,20）通知 被叫电信设备（10,12,14,16,18,20）不再处于保持状态。

公开(公告)号：WO1992012493A1

公开(公告)日：1992-07-23

申请号：PCT/US1991009756

申请日：1991-12-30

Applicant: GTE LABORATORIES INCORPORATED

Inventor： GTE LABORATORIES INCORPORATED ,  DU, Min-Wen ,  CHANG, Shih-Chio

IPC: G06F15/38

CPC classification number: G06F17/30985 ,  G06F17/273 ,  G06F17/2795 ,  G06K9/62 ,  G06K9/72

Abstract: A data string processing system uses fast algorithms for approximate string matching in a dictionary (23). Multiple spelling errors of insert, delete, change and transpose operations on character strings are considered in the disclosed fault model. S-trace, the fault model is used in formulating the algorithms and, a four-step reduction procedure improves the efficiency of an approximate string matching algorithm. These approaches to spelling correction, (i.e., using the upper bound, the string length partition criterion and the cut-off criterion) represent three improvements from the basic exhaustive comparison approach. Each can be naturally incorporated into the next step. In the fourth-step, a hashing scheme avoids comparing the given string with words at large distances when searching in the neighborhood of a small distance. An algorithm that is sub-linear to the number of words in dictionary (23) results. An application of the algorithms to a library information system uses original text files (21), information description files (22) and a negative dictionary (23) stored on disks (12).

Abstract translation: 数据串处理系统使用快速算法在字典中进行近似字符串匹配（23）。 在公开的故障模型中考虑了对字符串的插入，删除，更改和转置操作的多个拼写错误。 S-trace，故障模型用于制定算法，四步简化程序提高了近似字符串匹配算法的效率。 拼写校正的这些方法（即，使用上限，字符串长度分割标准和截止标准）表示从基本详尽比较方法的三个改进。 每个都可以自然并入下一步。 在第四步中，当在小距离附近进行搜索时，散列方案避免将给定的字符串与大距离的字进行比较。 与字典（23）中的单词数量子线性相关的算法。 将算法应用于库信息系统使用存储在磁盘（12）上的原始文本文件（21），信息描述文件（22）和否定字典（23）。