Abstract:
A heterostructure device includes a ridge-waveguide laser (11) monolithically integrated with a ridge-waveguide rear facet monitor [RFM] (12). An integral V-groove etched directly into the device substrate (10) enables passive alignment of an optical fiber (13) to the active region (11-1) of the laser (11). The laser and RFM facets were formed using an in-situ multistep reactive ion etch process.
Abstract:
A heterostructure device includes a ridge-waveguide laser (11) monolithically integrated with a ridge-waveguide rear facet monitor [RFM] (12). An integral V-groove etched directly into the device substrate (10) enables passive alignment of an optical fiber (13) to the active region (11-1) of the laser (11). The laser and RFM facets were formed using an in-situ multistep reactive ion etch process.