公开(公告)号：US11075315B2

公开(公告)日：2021-07-27

申请号：US16386604

申请日：2019-04-17

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masahiro Hitaka ,  Akio Ito ,  Tatsuo Dougakiuchi ,  Kazuue Fujita ,  Tadataka Edamura

IPC: H01L31/18 ,  H01L31/173 ,  H01S5/34 ,  H01L31/0352 ,  H01L31/0224 ,  H01S5/02 ,  H01S5/22 ,  H01S5/042 ,  H01S5/343 ,  H01L31/0304 ,  G01N21/25 ,  H01S5/026

Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.

公开(公告)号：USD899284S1

公开(公告)日：2020-10-20

申请号：US29684296

申请日：2019-03-20

Applicant: HAMAMATSU PHOTONICS K.K.

Designer： Tatsuo Dougakiuchi ,  Akio Ito ,  Masahiro Hitaka ,  Tadataka Edamura

公开(公告)号：USD899279S1

公开(公告)日：2020-10-20

申请号：US29684290

申请日：2019-03-20

Applicant: HAMAMATSU PHOTONICS K.K.

Designer： Tatsuo Dougakiuchi ,  Akio Ito ,  Masahiro Hitaka ,  Tadataka Edamura

公开(公告)号：US10404037B2

公开(公告)日：2019-09-03

申请号：US16027709

申请日：2018-07-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira Higuchi ,  Yoshitaka Kurosaka ,  Tadataka Edamura ,  Masahiro Hitaka

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/10

Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.