公开(公告)号：US10404037B2

公开(公告)日：2019-09-03

申请号：US16027709

申请日：2018-07-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira Higuchi ,  Yoshitaka Kurosaka ,  Tadataka Edamura ,  Masahiro Hitaka

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/10

Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.