公开(公告)号：US20150137298A1

公开(公告)日：2015-05-21

申请号：US14605120

申请日：2015-01-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa NAGANO ,  Noburo HOSOKAWA ,  Tomofumi SUZUKI ,  Takashi BABA

IPC: H01L27/144 ,  H01L31/0232 ,  H01L31/107

CPC classification number: H01L27/1446 ,  H01L27/1443 ,  H01L27/14605 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/02322 ,  H01L31/107 ,  H01L2224/11

Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

Abstract translation: 半导体光检测元件具有多个通道，每个通道由包括以盖革模式操作的多个雪崩光电二极管的光电二极管阵列组成，与各雪崩光电二极管串联连接的淬火电阻器，以及淬灭电阻器 并联连接 安装基板被配置为使得与第三主面对应的多个电极布置在第三主表面上，并且使得用于处理来自各个通道的输出信号的信号处理单元被布置在第四主表面侧。 在半导体基板中，形成与各信道电连接的信号线的通孔电极。 通孔电极和电极通过凸块电极电连接。

公开(公告)号：US20250044074A1

公开(公告)日：2025-02-06

申请号：US18919844

申请日：2024-10-18

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tomofumi SUZUKI ,  Kyosuke KOTANI ,  Tatsuya SUGIMOTO ,  Yutaka KURAMOTO ,  Katsumi SHIBAYAMA ,  Noburo HOSOKAWA ,  Hirokazu YAMAMOTO ,  Takuo KOYAMA

IPC: G01B9/02 ,  B81B3/00 ,  G01J3/02 ,  G01J3/10 ,  G01J3/14 ,  G01J3/45 ,  G01J3/453 ,  G02B7/182 ,  G02B26/08 ,  G02B27/14

Abstract: A mirror unit 2 includes a mirror device 20 including a base 21 and a movable mirror 22, an optical function member 13, and a fixed mirror 16 that is disposed on a side opposite to the mirror device 20 with respect to the optical function member 13. The mirror device 20 is provided with a light passage portion 24 that constitutes a first portion of an optical path between the beam splitter unit 3 and the fixed mirror 16. The optical function member 13 is provided with a light transmitting portion 14 that constitutes a second portion of the optical path between the beam splitter unit 3 and the fixed mirror 16. A second surface 21b of the base 21 and a third surface 13a of the optical function member 13 are joined to each other.

公开(公告)号：US20240110779A1

公开(公告)日：2024-04-04

申请号：US18535364

申请日：2023-12-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tomofumi SUZUKI ,  Kyosuke KOTANI ,  Tatsuya SUGIMOTO ,  Yutaka KURAMOTO ,  Katsumi SHIBAYAMA ,  Noburo HOSOKAWA ,  Hirokazu YAMAMOTO ,  Takuo KOYAMA

IPC: G01B9/02 ,  B81B3/00 ,  G01J3/02 ,  G01J3/10 ,  G01J3/14 ,  G01J3/45 ,  G02B7/182 ,  G02B26/08 ,  G02B27/14

CPC classification number: G01B9/02051 ,  B81B3/00 ,  B81B3/0021 ,  B81B3/007 ,  G01B9/02049 ,  G01J3/0202 ,  G01J3/021 ,  G01J3/0237 ,  G01J3/108 ,  G01J3/14 ,  G01J3/45 ,  G02B7/182 ,  G02B26/0816 ,  G02B26/0833 ,  G02B26/0841 ,  G02B27/144 ,  B81B2201/042 ,  B81B2203/0154 ,  G01J2003/104 ,  G01J3/4532

Abstract: A mirror unit 2 includes a mirror device 20 including a base 21 and a movable mirror 22, an optical function member 13, and a fixed mirror 16 that is disposed on a side opposite to the mirror device 20 with respect to the optical function member 13. The mirror device 20 is provided with a light passage portion 24 that constitutes a first portion of an optical path between the beam splitter unit 3 and the fixed mirror 16. The optical function member 13 is provided with a light transmitting portion 14 that constitutes a second portion of the optical path between the beam splitter unit 3 and the fixed mirror 16. A second surface 21b of the base 21 and a third surface 13a of the optical function member 13 are joined to each other.

公开(公告)号：US20180083143A1

公开(公告)日：2018-03-22

申请号：US15561996

申请日：2016-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Noburo HOSOKAWA ,  Nao INOUE ,  Katsumi SHIBAYAMA

IPC: H01L31/02 ,  H01L31/0216 ,  H01L23/00

CPC classification number: H01L27/14687 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/103 ,  H01L31/107 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/0236 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/0345 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/10126 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/13007 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/00014

Abstract: A semiconductor device includes a semiconductor substrate in which a through hole is formed, a first wiring, an insulating layer, and a second wiring that is electrically connected to the first wiring in an opening of the insulating layer. The insulating layer has a first curved portion that covers an inner surface of a through hole between a first opening and a second opening and a second curved portion that covers an edge of the second opening. A surface in the first curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole. The surface in the second curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole.

公开(公告)号：US20180069145A1

公开(公告)日：2018-03-08

申请号：US15561992

申请日：2016-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Noburo HOSOKAWA ,  Terumasa NAGANO ,  Takashi BABA

IPC: H01L31/107 ,  H01L21/3205 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L27/14687 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L24/00 ,  H01L24/02 ,  H01L24/13 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/103 ,  H01L31/107 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/0236 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/10126 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/351

Abstract: In a plane including the center line of a vertical through hole, it is assumed that a segment that connects a first point corresponding to the edge of an opening of an insulating layer and a second point corresponding to the edge of a second opening is a first segment, a segment that connects the second point and a third point corresponding to an intersection point between the second opening and a surface of the insulating layer is a second segment, and a segment that connects the third point and the first point is a third segment. In the insulating layer, the first area located on one side with respect to the first segment is larger than the sum of the second area surrounded by the first, the second and the third segments and the third area located on the other side with respect to the third segment.

公开(公告)号：US20160329455A1

公开(公告)日：2016-11-10

申请号：US15213629

申请日：2016-07-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa NAGANO ,  Noburo HOSOKAWA ,  Tomofumi SUZUKI ,  Takashi BABA

IPC: H01L31/107 ,  H01L49/02 ,  H01L27/146

CPC classification number: H01L31/107 ,  G01J1/42 ,  G01T1/208 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14663 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/022408

Abstract: A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through hump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

Abstract translation: 半导体光检测元件包括以Geiger模式操作并形成在半导体衬底中的多个雪崩光电二极管，与各个雪崩光电二极管串联连接并设置在半导体衬底的第一主表面侧上的骤冷电阻器，以及多个通孔 电极连接到淬火电阻器并形成为从第一主表面侧穿过半导体衬底到第二主表面侧的电极。 安装基板包括在第三主表面侧对应于相应的通孔电极布置的多个电极。 通孔电极和电极通过隆起电极电连接，半导体衬底的侧表面和玻璃衬底的侧表面彼此齐平。